Patent classifications
H03F2200/423
Resonant cavity combined solid state amplifier system
A resonant cavity combined solid-state amplifier system including a resonant cavity having at least one output port coupled to a high-power transmission line. A plurality of high-power transistors are each configured to generate a variable amount of power input directly into the resonant cavity. The plurality of high-power transistors may be configured such that a failure of one or more of the plurality of high-power transistors does not substantially impede operation of the resonant cavity. A plurality of output impedance matching networks each coupled to one of the plurality of high-power transistors and extending into the resonant cavity are configured to match an impedance of each transistor to an impedance of the resonant cavity and configured to electromagnetically couple power from each of the plurality of high-power transistors into the resonant cavity to provide a combined high-power output to the high-power transmission line.
DIFFERENTIAL CONSTRUCTIVE WAVE OSCILLATOR DEVICE
A differential constructive wave oscillator device including a single, continuous differential transmission line that is arranged into first and second parallel traces in the form of a Mobius loop. The continuous transmission line includes first and second crossover points, each of which provides for a point of inflection between the first and second traces. In each stage of the device, both the first and second traces of the transmission line carry the forward traveling wave signal from a differential input port to a differential output port. Each phase includes a differential delay section that provides for a phase shift between a signal on the first trace and a signal on the second trace. Each phase additionally includes a differential feedback amplifier that amplifies the forward traveling wave signal at the differential output port, generates a differential feedback signal, and routes the differential feedback signal to the differential input port.
High power radio-frequency switching topology and method
Aspects and examples described herein provide a radio-frequency switching circuit, switching device, and related methods. In one example, a radio-frequency switching device includes an input path configured to receive a radio-frequency signal, a plurality of output paths each configured to provide the radio-frequency signal, and a plurality of radio-frequency sub-networks each coupled to the input path and configured to direct the radio-frequency signal, each of the plurality of sub-networks including at least a first radio-frequency circuit having a first series of directly biased transistors, a second radio-frequency circuit having a second series of directly biased transistors, and a direct current blocking network interposed between the first radio-frequency circuit and the second radio-frequency circuit, each output path of the plurality corresponding to at least one of the plurality of radio-frequency sub-networks.
Ultra compact multi-band transmitted with robust AM-PM distortion self-suppression techniques
A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. A output passive network can further generate a flat-phase response between dual resonances of operation.
Wideband distributed power amplifier utilizing metamaterial transmission line conception with impedance transformation
A power amplifier includes a transistor operating in a range of frequencies from a lower operating frequency to a higher operating frequency to provide a relatively linear gain between the lower operating frequency and the higher operating frequency, an input transmission line circuit coupled to a gate terminal of the transistor, and an output transmission line circuit coupled to a drain terminal of the transistor. The input transmission line includes an inductor-capacitor (LC) circuit that resonates at a first resonant frequency equaled to or higher than the higher operating frequency. The output transmission line includes an inductor-capacitor-inductor (LCL) circuit and a capacitor-inductor-capacitor (CLC) circuit. The LCL circuit resonates at a second resonant frequency equaled to or lower than the lower operating frequency. The CLC circuit resonates at a third resonant frequency equaled to or higher than the higher operating frequency.
Power source supply circuit, amplifier, communication device, base station, and power source supply method
A power source supply circuit includes: a plurality of power sources (11-1, 11-2) that generate power source voltages different from each other; a switch circuit (14) that switches and outputs the power source voltages generated in the plurality of power sources (11-1, 11-2); a voltage output terminal (16) that outputs outside the power source voltages output from the switch circuit (14); an RF choke circuit (15) provided between the switch circuit (14) and the voltage output terminal (16), the RF choke circuit (15) including a first capacitor; and a second capacitor (12-1, 12-2) provided between the plurality of power sources (11-1, 11-2) and the switch circuit (14), the second capacitor (12-1, 12-2) having a larger capacitance than the first capacitor.
Multi-mode multi-band self-realigning power amplifier
A power amplifier (PA) system is provided for multi-mode multi-band operations. The PA system includes one or more amplifying modules, each amplifying module including one or more banks, each bank comprising one or more transistors; and a plurality of matching modules, each matching module being configured to be adjusted to provide impedances corresponding to frequency bands and conditions. A controller dynamically controls an input terminal of each bank and adjusts the matching modules to provide a signal path to meet specifications on properties associated with signals during each time interval.
Matrix power amplifier
A power amplifier includes a two-dimensional matrix of NM active cells formed by stacking main terminals of multiple active cells in series. The stacks are coupled in parallel to form the two-dimensional matrix. The power amplifier includes a driver structure to coordinate the driving of the active cells so that the effective output power of the two-dimensional matrix is approximately NM the output power of each of the active cells.
MULTI-MODE POWER AMPLIFIERS WITH PHASE MATCHING
Apparatus and methods for multi-mode power amplifiers are provided herein. In certain configurations, a wireless device includes a multi-mode power amplifier including a plurality of amplification paths electrically connected in parallel with one another. The plurality of amplification paths includes a first amplification path including an input stage of a first stage type and an output stage of a second stage type, and a second amplification path including an output stage of the second stage type. The first stage type provides non-inverting gain and the second stage type provides inverting gain. The wireless device further includes a transceiver that provides a radio frequency signal to the multi-mode power amplifier, and that operates the multi-mode power amplifier in a selected power mode chosen from a plurality of power modes based on selectively activating one or more of the plurality of amplification paths.
RF POWER AMPLIFIER
An RF power amplifier includes an input coupler including a first resistor and a first capacitor, an input phase difference network of the input coupler including a first input direct current (DC) bias injection network and a second capacitor connected in series with the first resistor. The second capacitor increases a bandwidth of the RF power amplifier. The RF power amplifier may further include a first power amplifier and a second power amplifier. The first input DC bias injection network provides power to the first power amplifier and the second power amplifier. The RF power amplifier includes a lateral dimension narrower than a lateral dimension of an RF power amplifier comprising bias circuitry on two opposing sides.