An on-chip transformer circuit is disclosed. The on-chip transformer circuit comprises a primary winding circuit comprising at least one turn of a primary conductive winding arranged as a first N-sided polygon in a first dielectric layer of a substrate; and a secondary winding circuit comprising at least one turn of a secondary conductive winding arranged as a second N-sided polygon in a second, different, dielectric layer of the substrate. In some embodiments, the primary winding circuit and the secondary winding circuit are arranged to overlap one another at predetermined locations along the primary conductive winding and the secondary conductive winding, wherein the predetermined locations comprise a number of locations less than all locations along the primary conductive winding and the secondary conductive winding.

An amplifier that is configured to amplify an RF signal includes a power combiner circuit. The power combiner circuit includes a first branch connected between a first RF input port and a summing node and a second branch connected between a second RF input port and the summing node. Each of the first and second branches includes an impedance inverter. The Chireix combiner is configured to present a Chireix load modulated impedance response to the first and second RF input ports. The power combiner circuit further includes compensation elements being configured to at least partially compensate for a reactance of the Chireix combiner circuit in a Doherty amplifier mode in which a signal is applied to the first RF input port and the second RF input port is electrically open.

A semiconductor integrated circuit includes a first transmission power mode configured to transmit by a first power, and a second transmission power mode configured to transmit by a second power smaller than the first power, the semiconductor integrated circuit. The semiconductor integrated circuit includes a first transistor configured to receive and amplify a transmission signal in the second transmission power mode, and an attenuator including a resistor element and a switching element, provided between an output of the first transistor and an output terminal, configured to control attenuation of an output signal of the first transistor.

Systems are provided for RF high power generation. An arrangement includes an RF power combiner, at least one RF power amplifier, a switch, a control unit, and a transmission line. The RF power combiner has at least one RF input and at least one RF output. The RF power amplifier is electrically connected to the RF input via the transmission line. The switch is included in the transmission line. The switch is configured to control, by a switching action, transmission of a RF signal from the RF power amplifier to the RF input via the transmission line. The control unit is electrically connected to the switch. The control unit is configured to control the switching action of the switch. The control unit is electrically connected to the switch via the same transmission line.

A power amplifier module can be formed that includes metamaterial matching circuits. This power amplifier module can be included as part of a front-end module of a wireless device. The front-end module can replace a passive duplexer with an active duplexer that uses the power amplifier module in combination with a low noise amplifier circuit that can include a metamaterial matching circuit. The combination of PA and LNA circuits that utilize metamaterials can provide the functionality of a duplexer without including a stand-alone or passive duplexer. Thus, in certain cases, the front-end module can provide duplexer functionality without including a separate duplexer. Advantageously, in certain cases, the size of the front-end module can be reduced by eliminating the passive duplexer. Further, the loss introduced into the signal path by the passive duplexer is eliminated improving the performance of the communication system that includes the active duplexer.

Described herein is a single-input hybrid Doherty power amplifier (PA). Unlike the conventional 214 Doherty PA inverter which only performs the correct load modulation at its center frequency, the hybrid Doherty PA (HDω-PA) combiner network achieves a wideband load modulation using the frequency dependence of the electrical length of the output combiner lines versus frequency for sliding the PA mode of operation. A modified theory is presented herein to allow for a single-input PA implementation. In this design, the outphasing angle is only changing with frequency and not the input power. A transmission line phase shifter is used to provide the correct frequency-dependent input phase offset ensuring the correct wideband load modulation performed by the output combiner

An RF power amplifier circuit includes a power divider, multiple power amplification circuits and a power combiner that cooperatively perform power amplification on an RF input signal so as to output an RF output signal, and an impedance conversion circuit that has a circuit terminal coupled to one of the power divider and the power combiner which has a microstrip structure, and that is configured such that a conversion impedance, which is an impedance seen into the impedance conversion circuit from the circuit terminal, matches an impedance seen into the power divider or the power combiner from the circuit terminal. The microstrip structure has a physical length associated with the conversion impedance.

A power amplifier circuit includes a power splitter, a first amplifier configured to output a first amplified signal from a first output terminal, and a second amplifier configured to output a second amplified signal from a second output terminal. The power amplifier circuit further includes a first termination circuit connected between the first output terminal and the second output terminal, a first transmission line, a second transmission line, a second termination circuit connected between another end of the first transmission line and another end of the second transmission line, and a power combiner.

A power amplifier module can be formed that includes metamaterial matching circuits. This power amplifier module can be included as part of a front-end module of a wireless device. The front-end module can replace a passive duplexer with an active duplexer that uses the power amplifier module in combination with a low noise amplifier circuit that can include a metamaterial matching circuit. The combination of PA and LNA circuits that utilize metamaterials can provide the functionality of a duplexer without including a stand-alone or passive duplexer. Thus, in certain cases, the front-end module can provide duplexer functionality without including a separate duplexer. Advantageously, in certain cases, the size of the front-end module can be reduced by eliminating the passive duplexer. Further, the loss introduced into the signal path by the passive duplexer is eliminated improving the performance of the communication system that includes the active duplexer.

A bandpass parametric amplifier circuit includes a plurality of unit cells. At least one unit cell includes a first inductor having a first node coupled to a center conductor and a second node coupled to ground. There is a first capacitor having a first node coupled to the center conductor and a second node coupled to ground. There is a second inductor having a first node coupled to the center conductor. A second capacitor has a first node coupled to a second node of the second inductor. The second capacitor and the second inductor are in series with the center conductor.