A power amplifier comprising a first member and a second member including a compound semiconductor region joined to a first face of the first member including a semiconductor region. The second member includes an amplifier circuit including a compound semiconductor element, and multiple clamp diodes connected in multiple stages and between an output port of the amplifier circuit and ground. The first member includes a switch, connected between an extension point, which is a middle point of the multiple clamp diodes and the ground, a temperature sensor, and a switch control circuit which performs on-off control of the switch based on a result of measurement by the temperature sensor. The extension point is connected to the switch via a path including an inter-member connection wire on an interlayer insulating film from the first face of the first member to a surface of the second member.

According to certain aspects, a chip includes a pad, a power amplifier, a transformer coupled between an output of the power amplifier and the pad, a transistor coupled between the transformer and a ground, and a first clamp circuit coupled between a gate of the transistor and a drain of the transistor.

An amplifier includes a semiconductor die and a substrate that is distinct from the semiconductor die. The semiconductor die includes a III-V semiconductor substrate, a first RF signal input terminal, a first RF signal output terminal, and a transistor (e.g., a GaN FET). The transistor has a control terminal electrically coupled to the first RF signal input terminal, and a current-carrying terminal electrically coupled to the first RF signal output terminal. The substrate includes a second RF signal input terminal, a second RF signal output terminal, circuitry coupled between the second RF signal input terminal and the second RF signal output terminal, and an electrostatic discharge (ESD) protection circuit. The amplifier also includes a connection electrically coupled between the ESD protection circuit and the control terminal of the transistor. The substrate may be another semiconductor die (e.g., with a driver transistor and/or impedance matching circuitry) or an integrated passive device.

An amplifier includes a semiconductor die and a substrate that is distinct from the semiconductor die. The semiconductor die includes a first RF signal input terminal, a first RF signal output terminal, and a transistor. The transistor has a control terminal electrically coupled to the first RF signal input terminal, and a current-carrying terminal electrically coupled to the first RF signal output terminal. The substrate includes a second RF signal input terminal, a second RF signal output terminal, circuitry coupled between the second RF signal input terminal and the second RF signal output terminal, and an electrostatic discharge (ESD) protection circuit. The amplifier also includes a connection electrically coupled between the ESD protection circuit and the control terminal of the transistor. The substrate may be another semiconductor die (e.g., with a driver transistor and/or impedance matching circuitry) or an integrated passive device.

An integrated circuit includes a multiplexer circuit configured to provide an output signal on a conductive line, a programmable gain amplifier having a non-inverting input connected to the conductive line to receive the output signal from the multiplexer, a slew rate adjust circuit connected at a first node on the conductive line between the multiplexer circuit and the programmable gain amplifier, a first switch including a first terminal connected to the first node and a second terminal connected to the input of the programmable gain amplifier, and a low pass filter connected between the first and second terminals of the first switch.

This description relates, generally, to protecting a circuit from an input voltage. Various examples include an apparatus including one or more circuits to draw current from, or provide current to, a pair of connectors for an input circuit. The connectors may be for electrical coupling to first and second terminals of a twisted pair. The one or more circuits may be at least partially responsive to positive and negative biasing signals. The apparatus may additionally include an operational amplifier to generate the positive and negative biasing signals. The operational amplifier may include: a first input terminal at least partially responsive to a reference voltage and a second input terminal at least partially responsive to a common-mode voltage of the input circuit. Related systems and methods are also disclosed.

A class D amplifier driving circuit is used to generate an output gate driving voltage according to an input voltage that dynamically varies with the amplitude of an audio signal, and the driving voltage is used to drive the high-voltage transistor of the class D amplifier. The class D amplifier driving circuit includes: a reference voltage generation circuit for generating a second reference voltage according to a first reference voltage; a clamping circuit for clamping the input voltage; a low dropout (LDO) linear regulator pre-stage for generating an intermediate voltage according to the second reference voltage; and an LDO linear regulator output stage for generating the driving voltage according to the input voltage and the intermediate voltage.

Amplifier having electrostatic discharge and surge protection circuit. In some embodiments, a radio-frequency integrated circuit can include an amplifier, a controller configured to control operation of the amplifier, and a clamp circuit configured to provide electrostatic discharge protection and surge protection for either or both of the amplifier and the controller. The clamp circuit can include a feedback combination clamp implemented to direct a current associated with either or both of an electrostatic discharge and a surge at a first node to a second node.

In certain aspects, a chip includes a pad, and a power amplifier having a first output and a second output. The chip also includes a transformer, wherein the transformer includes a first inductor coupled between a first terminal and a second terminal of the transformer, wherein the first terminal is coupled to the first output of the power amplifier, and the second terminal is coupled to the second output of the power amplifier. The transformer also includes a second inductor coupled between a third terminal and a fourth terminal of the transformer, wherein the third terminal is coupled to the pad. The chip also includes a first switch coupled to the fourth terminal, a shunt inductor coupled in parallel with the first switch, and a low-noise amplifier coupled to the third terminal.

A power amplifier with clamp and feedback protection circuitry is disclosed. In one aspect, the power amplifier is initially protected by a fast-acting clamp circuit whose overall size is relatively limited. Subsequent operation allows a comparatively slowly acting feedback loop to dominate the protection of the power amplifier. By providing the two protection circuits, each optimized for a particular phase of protection, the overall size of associated protection circuitry may be diminished while still protecting the power amplifier from failure inducing conditions.