A power amplifier apparatus includes: an amplifier configured to amplify an input signal; a sensing circuit connected to the amplifier and configured to sense a bias of the amplifier; and a biasing circuit connected to the sensing circuit and configured to provide a biasing current to the amplifier, wherein the sensing circuit is configured to change the biasing current based on the bias of the amplifier.

A wideband amplifier includes a first stage and a second stage. The first stage includes a transconductance transistor driven by an input signal through an input transformer. The transconductance transistor couples to a cascode transistor forming an output node for the first stage. The second stage couples the output node from the first stage through an output transformer to drive an output transistor.

An output driver (1) comprises a driver transistor (MP0) having a gate node (GMP0) to apply a gate control voltage (GCV) and a gate control circuit (30) to control the gate node (GMP0) of the driver transistor (MP0). The output driver (1) is configured to be operable in a first operation mode and a second operation mode, the variable resistance of the current path of the driver transistor (MP0) being lower in the first operation mode than in the second operation mode. The gate control circuit (30) comprises a controllable resistor (RC), the controllable resistor (RC) being disposed between the gate node (GMP0) of the driver transistor (MP0) and an output node (QP) of the output driver (1), and a resistance of the controllable resistor (RC) being dependent on operating the output driver in the first or second operation mode.

An output driver (1) comprises a driver transistor (MP0) having a gate node (GMP0) to apply a gate control voltage (GCV) and a gate control circuit (30) to control the gate node (GMP0) of the driver transistor (MP0). The output driver (1) is configured to be operable in a first operation mode and a second operation mode, the variable resistance of the current path of the driver transistor (MP0) being lower in the first operation mode than in the second operation mode. The gate control circuit (30) comprises a controllable resistor (RC), the controllable resistor (RC) being disposed between the gate node (GMP0) of the driver transistor (MP0) and an output node (QP) of the output driver (1), and a resistance of the controllable resistor (RC) being dependent on operating the output driver in the first or second operation mode.

Apparatus and methods for amplifier input-overvoltage protection with low leakage current are provided herein. In certain embodiments, amplifier input circuitry for an amplifier includes a pair of input terminals, a pair of input transistors each having a control input (for instance, a transistor gate), a pair of protection transistors each connected between one of the input terminals and the control input of a corresponding one of the input transistors, and a bidirectional clamp connected between the control inputs of the input transistors. Implementing the amplifier input circuitry in this manner provides a number of advantages including, but not limited to, robust protection against input overvoltage and low input-leakage current.

An amplifier includes a semiconductor die and a substrate that is distinct from the semiconductor die. The semiconductor die includes a III-V semiconductor substrate, a first RF signal input terminal, a first RF signal output terminal, and a transistor (e.g., a GaN FET). The transistor has a control terminal electrically coupled to the first RF signal input terminal, and a current-carrying terminal electrically coupled to the first RF signal output terminal. The substrate includes a second RF signal input terminal, a second RF signal output terminal, circuitry coupled between the second RF signal input terminal and the second RF signal output terminal, and an electrostatic discharge (ESD) protection circuit. The amplifier also includes a connection electrically coupled between the ESD protection circuit and the control terminal of the transistor. The substrate may be another semiconductor die (e.g., with a driver transistor and/or impedance matching circuitry) or an integrated passive device.

An amplifier includes a semiconductor die and a substrate that is distinct from the semiconductor die. The semiconductor die includes a first RF signal input terminal, a first RF signal output terminal, and a transistor. The transistor has a control terminal electrically coupled to the first RF signal input terminal, and a current-carrying terminal electrically coupled to the first RF signal output terminal. The substrate includes a second RF signal input terminal, a second RF signal output terminal, circuitry coupled between the second RF signal input terminal and the second RF signal output terminal, and an electrostatic discharge (ESD) protection circuit. The amplifier also includes a connection electrically coupled between the ESD protection circuit and the control terminal of the transistor. The substrate may be another semiconductor die (e.g., with a driver transistor and/or impedance matching circuitry) or an integrated passive device.

An integrated circuit includes a multiplexer circuit configured to provide an output signal on a conductive line, a programmable gain amplifier having a non-inverting input connected to the conductive line to receive the output signal from the multiplexer, a slew rate adjust circuit connected at a first node on the conductive line between the multiplexer circuit and the programmable gain amplifier, a first switch including a first terminal connected to the first node and a second terminal connected to the input of the programmable gain amplifier, and a low pass filter connected between the first and second terminals of the first switch.

The driver circuit includes DC cut capacitors, an input buffer, input termination resistors connected in series between differential input signal terminals and an ESD protection circuit connected to a connection point of the input terminal resistors. The ESD protection circuit includes diodes.

This description relates, generally, to protecting a circuit from an input voltage. Various examples include an apparatus including one or more circuits to draw current from, or provide current to, a pair of connectors for an input circuit. The connectors may be for electrical coupling to first and second terminals of a twisted pair. The one or more circuits may be at least partially responsive to positive and negative biasing signals. The apparatus may additionally include an operational amplifier to generate the positive and negative biasing signals. The operational amplifier may include: a first input terminal at least partially responsive to a reference voltage and a second input terminal at least partially responsive to a common-mode voltage of the input circuit. Related systems and methods are also disclosed.