A power amplifier circuit includes an amplification unit, a heating unit, and a control circuit. The amplification unit is configured to amplify a radio-frequency signal. The heating unit is provided adjacent to the amplification unit. The heating unit includes one or more transistors configured to generate heat that increases as the passing current increases. The control circuit is coupled to the one or more transistors. The control circuit is configured to increase the passing current when the environmental temperature is a predetermined threshold or lower.

A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier configured to amplify a transmission signal; a first circuit component; and a power amplifier (PA) control circuit configured to control the power amplifier. The power amplifier and the PA control circuit are stacked on the first principal surface, and the first circuit component is disposed on the second principal surface.

An amplifier has a first amplifying circuit configured to receive a voltage input and to output an amplified current, a second amplifying circuit configured to receive the amplified current and to output an amplified voltage, the second amplifying circuit comprising a pair of feedback resistive elements, each feedback resistive element being coupled to a gate and drain of a corresponding transistor in a pair of output transistors in the second amplifying circuit, and a feedback circuit configured to provide a negative feedback loop between an input and an output of the pair of output transistors, the feedback circuit including a first transconductance amplification circuit and a first equalizing circuit.

Methods related to power amplification systems with adjustable common base bias. A method of implementing a power amplification system can include providing a cascode amplifier coupled to a radio-frequency input signal and coupled to a radio-frequency output. The method can further include providing a biasing component configured to apply one or more biasing signals to the cascode amplifier, the biasing component including a bias controller and one or more bias components. Each respective bias component may be coupled to a respective bias transistor.

One embodiment is a lower power technique to compensate for radio frequency (RF) amplifier gain and phase over temperature and part-to-part variation for particular use in phased array (PA) applications.

An apparatus can include tracking circuitry coupled to a current source and configured to generate a reference voltage signal based on a reference current signal from the current source. The apparatus can include voltage regulator circuitry coupled to the tracking circuitry and configured to generate a voltage supply signal based on the reference voltage signal. The apparatus can further include amplifier circuitry configured to amplify an input signal based on the voltage supply signal. The reference voltage signal can track process and temperature variations associated with at least one field effect transistor within the tracking circuitry. The voltage regulator circuitry can be configured to operate with a closed loop gain higher than 1. The tracking circuitry includes a first transistor connected in parallel with a second transistor, the first and second transistors having a complimentary type with each other (e.g., NMOS and PMOS transistors).

An apparatus is disclosed, comprising means for storing reference data indicative of characteristics for each of two or more amplifiers for amplifying signals in two or more respective bands, the reference data including voltage characteristics required by the particular amplifier to achieve a particular output power for a range of output power values for its respective frequency band. The apparatus may comprise means for receiving at least a first required output power for a first amplifier and a second required output power for a second amplifier, and determining, based on the reference data, the voltage characteristics required for the first amplifier to achieve the first required output power and the voltage characteristics required for the second amplifier to achieve the second required output power.

Disclosed in the present invention are a radio frequency power amplifier based on power detection feedback, a chip, and a communication terminal. The radio frequency power amplifier comprises multiple stages of amplifier circuits and at least one power detection feedback circuit; the input end of the power detection feedback circuit is connected to the output end of a current stage of amplifier circuit, and the output end of the power detection feedback circuit is connected to the input ends of the current stage of amplifier circuit and at least one stage of amplifier circuit located prior to the current stage of amplifier circuit. The power detection feedback circuit generates, according to the detected output power of the current stage of amplifier circuit, a control voltage varying inversely with the output power, so that the power detection feedback circuit outputs current varying positively with the control voltage.

A power amplifier with clamp and feedback protection circuitry is disclosed. In one aspect, the power amplifier is initially protected by a fast-acting clamp circuit whose overall size is relatively limited. Subsequent operation allows a comparatively slowly acting feedback loop to dominate the protection of the power amplifier. By providing the two protection circuits, each optimized for a particular phase of protection, the overall size of associated protection circuitry may be diminished while still protecting the power amplifier from failure inducing conditions.

Systems and devices are provided for tracking bandgap current generated by a bandgap circuit and mitigation of leakage current regardless of variations in PVT conditions. An apparatus may include one or more power amplifiers that powers components of the apparatus and comprising a transistor. The apparatus may also include bandgap current mirroring circuitry that generates a mirrored current that mirrors a received current that is process, voltage, and temperature (PVT) independent. The apparatus may also include a bulk voltage generator circuit including an amplifier having an input coupled to the bandgap current mirroring circuitry. Bulk voltage control circuitry is coupled to an output of the amplifier and generates a bulk voltage based on the relationship between the mirrored current and the leakage current.