Control device for aerosol inhalation device, includes operational amplifier including output terminal configured to generate voltage according to voltage applied to load configured to heat aerosol source and having correlation between temperature and electrical resistance value, control unit including input terminal and configured to perform processing based on voltage applied to the input terminal, and voltage dividing circuit configured to electrically connect the output terminal of the operational amplifier and the input terminal of the control unit. Power supply voltage of the operational amplifier is higher than power supply voltage of the control unit, and equals voltage applied to aerosol generation circuit including the load, and one of inverting input terminal and noninverting input terminal of the operational amplifier is electrically connected to the aerosol generation circuit.

An operational amplifier includes a voltage terminal; a common terminal; a first amplification stage for receiving a differential signal pair to generate a single-end amplification signal; a first buffer for generating a first voltage according to the single-end amplification signal; a first diode for reducing the first voltage to generate a second voltage; a second amplification stage for amplifying the second voltage to generate a third voltage; a voltage stabilizing circuit for stabilizing the third voltage; a second diode coupled between the second amplification stage and the common terminal; a second buffer for generating an output voltage according to the third voltage; and a current mirror coupled to the common terminal, the first amplification stage, the first diode and the second amplification stage.

An amplifier includes an input circuit that amplifies a difference between a first input voltage and a second input voltage to generate a first current and a second current. A positive feedback circuit amplifies a difference between the first current and the second current to generate a third current and a fourth current and outputs a difference between the third current and the fourth current through an output node. A temperature compensation circuit adjusts an amplification factor of the positive feedback circuit in response to a change of temperature.

A first correction voltage generation circuit provides a first positive or negative correction voltage for correcting an input voltage. A second correction voltage generation circuit provides a second correction voltage identical in polarity to the first correction voltage in accordance with the first correction voltage. The second correction voltage is generated to have a temperature coefficient reverse in polarity to a temperature coefficient of the first correction voltage.

A power amplifier with feedback ballast resistance is disclosed. In one aspect, a power amplifier cell may receive a bias signal from a bias circuit where the bias circuit includes a feedback loop having an impedance that, from the perspective of the bias signal is relatively low impedance, but from a ballast thermal control perspective provides sufficient resistance to avoid thermal runaway. In exemplary aspects, this feedback loop may be extended to operate with multiple power amplifier cells and provide differential mode thermal control optimized for individual cell bias signal control and common mode thermal control optimized for thermal control of the collective power amplifier cells of the power amplifier.

In an example, a system includes an amplifier having an output stage configured to provide an output voltage, where the output stage includes a p-channel transistor and an n-channel transistor. The system includes a sense transistor having a gate coupled to a gate of the p-channel transistor, where the sense transistor is configured to sense a current of the p-channel transistor and produce a sense current. The system includes a current mirror coupled to the sense transistor and configured to provide the sense current to a gate of a control transistor, the control transistor having a source coupled to the gate of the p-channel transistor. The system includes a reference current source coupled to the control transistor and configured to provide a reference current. The control transistor is configured to adjust a gate current provided to the p-channel transistor based on comparing the sense current to the reference current.

Examples of amplifier circuitry regulate a transconductance value (G.sub.m) of operational transconductance amplifiers (OTAs) in the amplifier to be approximately the same, which value is based on a supply voltage and a reference voltage applied to a reference OTA and the internal resistance of the reference OTA. The reference OTA generates an output current based on G.sub.m and the reference voltage, which current is compared to current generated by the supply voltage and internal resistance of the reference OTA. A tail current transistor of each of the reference OTA and a main OTA that mirrors the G.sub.m of the reference OTA provide a tail current feedback path by which G.sub.m is regulated. Amplifying circuitry is coupled to the main OTA to receive current signals. Based on the received current signals, amplifying circuitry generates a differential output voltage signal. The gain of the amplifying circuitry is proportional to the supply voltage and remains relatively constant across process temperature variations.

A radio frequency (RF) power amplifier (PA) for amplifying an RF signal between a source node and an output node, the RF PA including a silicon substrate with a complementary metal oxide semiconductor (CMOS) N-type transistor with a source region and a drain region fabricated therein. The source region includes the source node of the RF PA and the drain region includes the output node of the RF PA. The RF PA includes a planar resistor fabricated on the surface of the silicon substrate proximal to the drain region of the N-type transistor, wherein the resistor provides a thermal source for heating the RF PA; and a control circuit providing thermal heating to the RF PA by providing power to the planar resistor during RF signal bursts wherein the added thermal heating compensates transient heating within the transistor and results in a linear power amplification operation.

An apparatus that generates and limits a bias current of a power amplifier is provided. The apparatus includes a bias current circuit that generates a bias current to bias the power amplifier, and critically limit an increase in bias current, and a band gap reference circuit that provides a reference voltage or a reference current to the bias current circuit. The bias current circuit is configured to critically limit the increase in bias current, as a first bias transistor that generates the bias current is converted from a triode region to a saturation region, based on the reference voltage or the reference current.

A power amplifier includes a first transistor with a gate to which input power is applied and a drain from which output power is provided, a bias circuit configured to apply a bias to the gate of the first transistor, and a coupler configured to distribute the input power to the gate of the first transistor and to the bias circuit. The bias circuit includes a voltage generator circuit including a second transistor with a gate to which the power distributed to the bias circuit by the coupler is applied, the voltage generator circuit being configured to generate a first DC voltage increasing in accordance with an increase in the power distributed to the bias circuit. The bias circuit includes a level shifter circuit configured to generate a second DC voltage increasing in accordance with an increase in the first DC voltage.