A temperature compensation circuit for a power amplifier is provided, wherein data of circuit configurations corresponding to specific temperatures (including data associated with an output terminal voltage, a bias voltage, an adaptive bias, and a matching impedance of the power amplifier) for the power amplifier is stored in a read-only memory. Therefore, the temperature compensation circuit is capable of reading the data according to a temperature sensing signal to adjust the circuit configuration of the power amplifier accordingly, thereby, in a case of a constant input power of the power amplifier, an output power variance of the power amplifier is within a second interval (e.g., −10%˜+10%) when an environment temperature varies within a first interval. Therefore, the power amplifier has a stable gain.

This application is directed to methods and devices for an efficient power amplification system. An electronic device includes a first and a second power amplifier that are coupled to a quadrature combiner, a temperature monitoring circuit coupled to the first and second power amplifiers, and a controller coupled to the temperature monitoring circuit. The temperature monitoring circuit is configured to determine a temperature difference between the first and second power amplifiers. The controller is configured to adjust operation of at least one of the first and second power amplifiers to reduce the temperature difference between the first and second power amplifiers.

A circuit system for providing thermal stability to a transistor may include: a comparing circuit in electrical communication with the transistor for receiving a present voltage from the transistor and comparing a present voltage to a predetermined bias voltage; a logic gate electronically coupled to an output of the comparing circuit, the logic gate, gate having a high, open position and a low, closed position; and a heating element thermally coupled to the transistor and electrically coupled to the output of the comparing circuit, wherein when the present voltage is lower than the predetermined bias voltage, the gate is in the high, open position providing current to the heating element, and wherein when the present voltage is higher than the predetermine bias voltage the gate is in the low, closed position.

A power amplifier module includes a power amplifier including an amplifying unit including an amplifying transistor configured to amplify an input signal and output an output signal, and a bias unit including a bias transistor configured to provide a bias current to the amplifying transistor, and a sub bias transistor configured to provide a sub bias current to the amplifying transistor; and a control unit configured to provide a control current to the bias transistor and the sub bias transistor. The control unit is further configured to vary the control current according to the sub bias current, and a level of the sub bias current is lower than a level of the bias current.

An error amplifier includes an output pin coupled to a pulse width modulation (PWM) comparator of a buck-boost converter. A first transconductance amplifier adjusts an output current at the output pin and operates in a constant voltage mode. The first transconductance amplifier includes a first positive input to receive a first voltage reference and a first negative input coupled to a tap point of a voltage divider coupled between a voltage bus and a ground of the buck-boost converter. A second transconductance amplifier also adjusts the output current at the output pin and operates in a constant current mode. The second transconductance amplifier includes a second positive input to receive a second voltage reference and a second negative input coupled to a current sense amplifier, the current sense amplifier being coupled to a sense resistor positioned inline along the voltage bus.

An audio amplifier system is described herein, comprising: an amplifier adapted to amplify an audio signal and comprising an output enable/disable input, the amplifier further adapted to receive an output enable signal at the output enable/disable input that enables/disables an output of the amplifier; a Zobel network connected to the output of the audio amplifier and comprising a Zobel capacitor and a Zobel resistor arranged such that they form a high pass frequency filter function and wherein the Zobel network is adapted to be substantially resistive when a frequency of an audio signal output from the audio amplifier is within a first frequency range; a mirroring resistor connected in parallel to the Zobel resistor and adapted to mirror a power that is dissipated in the Zobel resistor, and wherein a printed circuit board upon which the mirroring resistor is located is adapted to conduct heat generated by the mirroring resistor; a negative temperature coefficient (NTC) resistor located in close proximity to the mirroring resistor to receive the conducted heat from the mirroring resistor and which is adapted to change its resistance in response to the transferred heat such that its resistance goes down as a temperature of the NTC resistor increases; and a circuit adapted to generate the output enable signal, wherein the circuit generates an output enable signal that enables the output of the amplifier when the temperature of the Zobel resistor is below a first temperature, and wherein the circuit generates an output enable signal that disables the output of the amplifier when the temperature of the Zobel resistor is substantially the same or above the first temperature.

An amplifier device includes an amplifier including cascade-connected power amplifiers in a plurality of stages and a bias circuit configured to supply bias currents to the amplifier. A bias current supplied to a power amplifier in the first stage of the power amplifiers in the plurality of stages exhibits a positive temperature characteristic. A bias current supplied to a power amplifier in the final stage exhibits a negative temperature characteristic.

A device includes a semiconductor die including a transistor. The transistor includes a plurality of parallel transistor elements. Each transistor element includes a drain region, a source region, and a gate region. The semiconductor die includes a first temperature sensor between a first transistor element in the plurality of transistor elements and a second transistor element in the plurality of transistor elements. The first temperature sensor is configured to generate a first output signal having a magnitude that is proportional to a temperature of the first temperature sensor.

A thermal and environmental noise suppressing interface circuit which is configured to operate cold and is configured to perform biasing with suppression of noise currents from room temperature noise voltages and dc coupled rf readout of a superconducting device under test with a single coaxial cable or equivalent conductor pair. The circuit is configured to suppress the propagation of thermal and environmental noises to/from sensors operating at a different temperature from its operating and control equipment while maintaining a single input-output channel, and provides for the placement of a local grounding impedance on an intercept board.

A power amplification module includes: a first bipolar transistor in which a radio frequency signal is input to a base and an amplified signal is output from a collector; a second bipolar transistor that is thermally coupled with the first bipolar transistor and that imitates operation of the first bipolar transistor; a third bipolar transistor in which a first control voltage is supplied to a base and a first bias current is output from an emitter; a first resistor that generates a third control voltage corresponding to a collector current of the second bipolar transistor at a second terminal; and a fourth bipolar transistor in which a power supply voltage is supplied to a collector, the third control voltage is supplied to a base, and a second bias current is output from an emitter.