A method of reducing memory effect of a power amplifier (PA), for a look-up table (LUT) based memory digital pre-distortion (DPD) circuit of an electronic device is disclosed. The method comprises generating a pre-distorted signal according to a LUT including parameters of an input signal amplitude and an input signal delay associated with a bandwidth of a signal inputted to the memory DPD circuit, and outputting the pre-distorted signal to the PA for improving the nonlinearity of the PA.

Example temperature compensation circuits and a phased array apparatus are described. One example temperature compensation circuit is applied to a signal processing path. The example temperature compensation circuit includes a temperature detection circuit, a temperature conversion circuit, and a passive variable attenuator. The passive variable attenuator is configured to be connected in series in the signal processing path. The temperature detection circuit is configured to generate a temperature signal and a reference signal, and output the temperature signal and the reference signal to the temperature conversion circuit. The temperature signal monotonically changes with a temperature of the signal processing path. The temperature conversion circuit is configured to generate a control signal based on the temperature signal and the reference signal. The passive variable attenuator is configured to adjust, under control of the control signal, an attenuation value of a signal processed by the signal processing path.

An amplifier includes an input transistor, an input terminal, a first current source, a cascode transistor, and a second current source. The input transistor is coupled to the input terminal. The first current source is coupled to the input transistor and is configured to provide a bias current to the input transistor that is proportional to absolute temperature. The cascode transistor is coupled to the input transistor. The second current source is coupled to the cascode transistor and is configured to provide a bias current to the cascode transistor that is complementary to absolute temperature.

A power amplifier circuit includes a first transistor disposed on a semiconductor substrate; a second transistor that supplies a bias current based on a first current which is a part of a control current to the first transistor; a current output element in which a current flowing therethrough increases in accordance with a rise in temperature; and a wiring portion including a plurality of metal layers that are electrically connected to an emitter of the first transistor and that are stacked one on top of another so as to oppose the semiconductor substrate. At least one metal layer among the plurality of metal layers extends so as to overlap an area extending from at least a part of a first disposition area in which the first transistor is disposed to a second disposition area in which the current output element is disposed in plan view of the semiconductor substrate.

Provided are a gain compensation device and a bias circuit device. A compensation bias current is generated by the gain compensation device to compensate the gain deviation of power amplifier and improve stability of power amplifier. Through high-temperature compensation unit and low-temperature compensation unit in different gears, gain of power amplifier is compensated along with temperature changes, thereby improving feasibility of the gain compensation device. It takes small space, and the circuit only includes the circuits corresponding to high-temperature compensation unit and low-temperature compensation unit, so the circuit is relatively simple and beneficial to miniaturization. In the bias circuit device, based on an initial bias current provided by a bandgap reference, the gain compensation device is added to generate a compensation bias current, and the initial bias current and compensation bias current are superimposed, so that the gain of power amplifier is further compensated, which improves stability of power amplifier.

An amplifier module includes a module substrate with a mounting surface, a signal conducting layer, a ground layer, and a ground terminal pad at the mounting surface. A thermal dissipation structure extends through the module substrate. A ground contact of a power transistor die is coupled to a surface of the thermal dissipation structure. Encapsulant material covers the mounting surface of the module substrate and the power transistor die, and a surface of the encapsulant material defines a contact surface of the amplifier module. A ground terminal is embedded within the encapsulant material. The ground terminal has a proximal end coupled to the ground terminal pad, and a distal end exposed at the contact surface. The ground terminal is electrically coupled to the ground contact of the power transistor die through the ground terminal pad, the ground layer of the module substrate, and the thermal dissipation structure.

Examples relate to a control apparatus, control device and control method for a cable modem, and to a cable modem. The control apparatus or control device comprises interface circuitry or communication means for communicating with one or more other components of the cable modem, and processing circuitry or processing means that is configured to obtain information on a temperature of a power amplifier or power amplification means of the cable modem from temperature measurement circuitry or temperature measurement means of the cable modem, and to control a duty cycle of the power amplifier based on the information on the temperature.

A device having device function circuitry configured to receive a device signal and output a modified device signal is disclosed. The device includes a device temperature sensor configured to generate a device temperature signal that is proportional to a temperature of the device function circuitry. The device function circuitry is further configured to maintain power dissipation of the device function circuitry to below a predetermined safe power dissipation level in response to a control signal that is generated based upon the device temperature signal.

A power amplification module includes a first transistor which amplifies and outputs a radio frequency signal input to its base; a current source which outputs a control current; a second transistor connected to an output of the current source, a first current from the control current input to its collector, a control voltage generation circuit connected to the output and which generates a control voltage according to a second current from the control current; a first FET, the drain being supplied with a supply voltage, the source being connected to the base of the first transistor, and the gate being supplied with the control voltage; and a second FET, the drain being supplied with the supply voltage, the source being connected to the base of the second transistor, and the gate being supplied with the control voltage.

Disclosed is an amplifier circuit for providing an output of at least 100 W, preferably of at least 200 W and most preferably of at least 250 W comprising a field effect transistor. A drain of the field effect transistor is connected with a protective feedback circuit. The protective feedback circuit is arranged to reduce an over-voltage energy at the drain of the field effect transistor if the voltage between the gate and a drain of the field effect transistor exceeds a feedback threshold voltage. Further disclosed is a radio frequency amplifier comprising an amplifier circuit, an electrical radio frequency generator comprising the radio frequency amplifier and a plasma processing system comprising an electrical radio frequency generator. Still further disclosed is a method of protecting a field effect transistor in an amplifier circuit.