In an example method of trimming a voltage reference circuit, the method includes: setting the circuit to a first temperature; trimming a first resistor (R.sub.DEGEN) of a differential amplifier stage of the circuit; and trimming a first resistor (R1) of a scaling amplifier stage of the circuit. The trimming equalizes current flow through the differential amplifier stage and the scaling amplifier stage. The method includes: trimming a second resistor (R2) of the scaling amplifier stage to set an output voltage of the circuit to a target voltage at the first temperature; setting the circuit to a second temperature; and trimming a second resistor (R.sub.PTAT) of the differential amplifier stage, a third resistor (R1.sub.PTAT) of the scaling amplifier stage, and a fourth resistor (R2.sub.PTAT) of the scaling amplifier stage to set the output voltage of the circuit to the target voltage at the second temperature.

An Array Core Block for an AESA includes a stack of 2*M alternating N-channel RFIC and MMIC Power Amplifier wafers bonded together by a wafer-scale direct bond hybrid (DBH) interconnect process. This process forms both metal-to-metal and dielectric hydrogen bonds between bonding surfaces to seal the wafer stack. Each array core block includes an array of through substrate metal vias to distribute DC bias, LO and information signals. Each array core block also includes a cooling system including micro-channels formed on a backside of at least one of the chips in each bonded pair and through substrate via holes formed through the stack that operatively couple the micro-channels for all of the bonded pairs to receive and circulate a fluid through the micro-channels and through substrate via holes to cool the RFIC and MMIC Power Amplifier chips and to extract the heated fluid.

The invention provides method and associated controller for improving temperature adaptability of an amplifier; the method may include: receiving a temperature value, and adjusting a supply voltage supplied to the amplifier according to the temperature value.

A power amplifier includes a first transistor with a gate to which input power is applied and a drain from which output power is provided, a bias circuit configured to apply a bias to the gate of the first transistor, and a coupler configured to distribute the input power to the gate of the first transistor and to the bias circuit. The bias circuit includes a voltage generator circuit including a second transistor with a gate to which the power distributed to the bias circuit by the coupler is applied, the voltage generator circuit being configured to generate a first DC voltage increasing in accordance with an increase in the power distributed to the bias circuit. The bias circuit includes a level shifter circuit configured to generate a second DC voltage increasing in accordance with an increase in the first DC voltage.

Described embodiments include an integrated circuit for temperature gradient compensation of a bandgap voltage. A bandgap core circuit has a bandgap feedback input, a bandgap adjustment input and a bandgap reference output. A resistor is coupled between the bandgap adjustment input and a ground terminal. An offset and slope correction circuit has an offset correction output that is coupled to the bandgap adjustment input. A signal at the offset correction output is trimmed at an ambient temperature. A thermal error cancellation (TEC) circuit has a TEC output coupled to the bandgap adjustment input. The TEC circuit includes first and second temperature sensors that are located apart from each other. A signal at the TEC output is responsive to temperatures at the first and second temperature sensors. An amplifier has an amplifier input and an amplifier output. The amplifier input is coupled to the bandgap reference output.

A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier configured to amplify a transmission signal; a first circuit component; and a power amplifier (PA) control circuit configured to control the power amplifier. The power amplifier and the PA control circuit are stacked on the first principal surface, and the first circuit component is disposed on the second principal surface.

A temperature compensation circuit is configured to generate a first electrical signal corresponding to the current ambient temperature, use the first electrical signal to adjust a second electrical signal received by an electrical signal input end, and obtain a third electrical signal; and output the third electrical signal to a power control circuit. The power control circuit is configured to convert the third electrical signal into a fourth electrical signal and output the fourth electrical signal to a power amplifier. The fourth electrical signal is used for controlling the gain of the power amplifier to present a preset change rule following a temperature change. Thus, by adding the described temperature compensation circuit in a power amplification circuit, the stability of the gain and the stability of the output power of a power amplifier are ensured, and the performance of the power amplifier is not affected by a change in temperature.

A mixer with a filtering function and a method for linearization of the mixer are provided. The mixer includes at least one amplifier, a transconductance device and a feedback network. The at least one amplifier is configured to output a filtered voltage signal according to an input voltage signal. The transconductance device is coupled to the at least one amplifier, and is configured to generate a filtered current signal according to the filtered voltage signal. The feedback network is coupled between any output terminal among at least one output terminal of the transconductance device and an input terminal of the at least one amplifier. More particularly, the mixer is configured to output a modulated signal according to the filtered current signal.

Disclosed is an integrated circuit amplifier having a power transistor with a signal/bias input terminal, a first high current terminal, and a second high current terminal, and thermal protection circuitry with a sensor transistor having a sensor control terminal, a sensor output terminal, and a sensor current terminal coupled to a fixed voltage node. Sensor bias circuitry includes a sensor bias terminal coupled to the sensor control terminal, wherein the sensor bias circuitry is configured to generate a temperature set point at which a sensor output voltage at the sensor output terminal drops at least 50% when the temperature of the sensor transistor is above the temperature set point. Shutdown circuitry coupled between the sensor output terminal and the signal/bias input terminal is configured to reduce a bias signal at the signal/bias terminal in response to the at least 50% drop in sensor output voltage.

A power amplifier includes: at least two first bridge type amplifying circuits and at least two second bridge type amplifying circuits; the negative pole of the first load of each first bridge type amplifying circuit is respectively coupled to the positive stage of the second load of each second bridge type amplifying circuits through a gating circuit. When both a first input signal input into one of the at least two first bridge type amplifying circuits and a second input signal input into one of the at least two second bridge type amplifying circuits are less than a preset threshold, the gating circuit is turned on, so that the one of the at least two first bridge type amplifying circuits and the one of the at least two second bridge type amplifying circuits can share load current by the gating circuit.