An apparatus for providing a supply control signal for a supply unit, the supply unit being configured to provide a variable controlled power supply to the power amplifier. The apparatus includes a determination module configured to determine a deviation of a signal from at least one nominal value; and an adjustment module configured to provide the supply control signal after an adjustment based on the determined deviation.

Dual gate FD-SOI transistors are used as MOSFET capacitors to replace passive well capacitors in analog microcircuits. Use of the dual gate FD-SOI devices helps to reduce unstable oscillations and improve circuit performance. A thick buried oxide layer within the substrate of an FD-SOI transistor forms a capacitive dielectric that can sustain high operating voltages in the range of 1.2 V-3.3 V, above the transistor threshold voltage. A secondary gate in the FD-SOI transistor is used to create a channel from the back side so that even when the bias voltage on the first gate is small, the effective capacitance remains higher. The capacitance of the buried oxide layer is further utilized as a decoupling capacitor between supply and ground. In one example, a dual gate PMOS FD-SOI transistor is coupled to an operational amplifier and a high voltage output driver to produce a precision-controlled voltage reference generator. In another example, two dual gate PMOS and one dual gate NMOS FD-SOI transistor are coupled to a charge pump, a phase frequency detector, and a current-controlled oscillator to produce a high-performance phase locked loop circuit in which the decoupling capacitor footprint is smaller, in comparison to the conventional usage of passive well capacitance.

An embodiment of a Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and a peaking amplifier die. The RF signal splitter divides an input RF signal into first and second input RF signals, and conveys the first and second input RF signals to first and second splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier die includes one or more second power transistors configured to amplify, along a peaking signal path, the second input RF signal to produce an amplified second RF signal. The carrier and peaking amplifier die are coupled to the substrate so that the RF signal paths through the carrier and peaking amplifier die extend in substantially different (e.g., orthogonal) directions.

Circuits, devices and methods related to antenna tuner. In some embodiments, an antenna can be tuned by amplifying a signal for transmission by operating a transistor with a base current, and monitoring the base current. The method can further include adjusting an antenna tuner to thereby adjust an antenna load impedance presented to the amplified signal, with the adjustment being based on a variation of the monitored base current.

An electronic device may include wireless circuitry with a baseband processor, a transceiver circuit, a front-end module, and an antenna. The front-end module may include amplifier circuitry such as a low noise amplifier for amplifying received radio-frequency signals. The low noise amplifier is operable in a non-carrier-aggregation (NCA) mode and a carrier aggregation (CA) mode. The low noise amplifier may include a first input stage, a second input stage, a complementary degeneration transformer, and an input impedance compensation circuit. During the NCA mode, the first input stage is turned on while the second input stage is turned off, the degeneration transformer is controlled to provide maximum inductance, and the compensation circuit is turned on to provide input matching. During the CA mode, the first and second input stages are turned on, the degeneration transformer is adjusted to provide less inductance, and the compensation circuit is turned off.

A method of operating a radio receiver device comprises receiving a plurality of signals with a plurality of corresponding frequencies; applying respective gains to each of the plurality of signals; and storing the gain applied to each signal and its corresponding frequency. The method comprises subsequently receiving a further signal with a further frequency; and applying a further gain to the further signal. The further gain is determined using at least one of the stored gains according to a difference between the further frequency and at least one of the plurality of corresponding frequencies.

A clamping circuit that may be used to provide efficient and effective voltage clamping in an RF front end. The clamping circuit comprises two series coupled signal path switches and a bypass switch coupled in parallel with the series coupled signal path switches. A diode is coupled from a point between the series coupled signal path switches to a reference potential. In addition, an output selection switch within an RF front end has integrated voltage clamping to more effectively clamp the output voltage from the RF front end. Additional output clamping circuits can be used at various places along a direct gain signal path, along an attenuated gain path and along a bypass path.

An amplification circuit includes: a power supply terminal that is connected to a power supply; a transistor that has a source terminal, a drain terminal, and a gate terminal to which a high-frequency signal is input; a transistor that has a source terminal that is connected to the drain terminal, a drain terminal that outputs a high-frequency signal, and a gate terminal that is grounded; a capacitor that is serially disposed on a second path that connects the gate terminal and the power supply terminal to each other; and a switch that is serially disposed on a first path or the second path. The drain terminal and the gate terminal are connected to each other via the switch and the capacitor.

A power amplifier output stage includes a first output array group having a first plurality of semiconductor devices, and a first loading adjustment module coupled to the first output array group. The first loading adjustment module is configured to adjust a loading of the first output array group to produce a first power dissipation value associated with the first output array group. The power amplifier output stage further includes a second output array group having a second plurality of semiconductor devices, and a second source loading adjustment module coupled to a second input of the second output array. The second source loading adjustment module is configured to adjust a source loading of the second output array group to produce a second power dissipation value associated with the second output array group, the first power dissipation value being different from the second power dissipation value.

Example multi-band phased array are described. One example multi-band phased array includes a plurality of branches coupled to a plurality of multi-band antennas. Each of the plurality of branches includes a low noise amplifier and a power amplifier. The power amplifier and the low noise amplifier are configured to transmit and receive, in a time-sharing manner, a signal of a first frequency band and a signal of a second frequency band that are received by the multi-band phased array, and the first frequency band and the second frequency band are different and do not overlap. Each of the plurality of branches further includes a phase shifter, where the phase shifter is configured to perform phase shifting on the signal of the first frequency band, and the phase shifter is further configured to perform phase shifting on the signal of the second frequency band.