An amplifier includes a first and a second differential input ports, and a single-ended output port. The amplifier includes a first and a second transistors, each having a gate, source, and drain terminals. The source terminals are coupled to a reference plane and the gate terminals are coupled to the respective first and second differential input ports. The amplifier includes a Balun having a primary and a secondary transformer winding, the primary transformer winding having one end coupled to the drain terminal of the first transistor, an opposite end coupled to the drain terminal of the second transistor, and a center tap coupled to a bias voltage, and the secondary transformer winding is adjacent to the primary transformer winding and having one end coupled to the single-ended output port and an opposite end open circuited. An electromagnetic field generated at the primary induces a signal at the secondary transformer winding.

A power supply circuit in a wireless communications system includes an envelope tracking modulator coupled to a first power amplifier circuit and a second power amplifier circuit, so that the power supply circuit supplies power to the first power amplifier circuit and the second power amplifier circuit. When a transmit signal output by a processor is within a first bandwidth range, the power supply circuit supplies power to the first power amplifier circuit, and the first power amplifier circuit amplifies power of the transmit signal. When the transmit signal output by the processor meets a second bandwidth range, the power supply circuit supplies power to the second power amplifier circuit, and the second power amplifier circuit amplifies the transmit signal.

A Doherty amplifier includes: a first amplifier to amplify a first signal as an auxiliary amplifier in a case where a frequency of each of the first signal and a second signal is a first frequency, and amplify the first signal as a main amplifier in a case where the frequency of each of the first signal and the second signal is a second frequency; a second amplifier to amplify the second signal as a main amplifier in a case where the frequency of each of the first signal and the second signal is the first frequency, and amplify the second signal as an auxiliary amplifier in a case where the frequency of each of the first signal and the second signal is the second frequency; and a combiner to synthesize the first signal amplified by the first amplifier and the second signal amplified by the second amplifier.

An amplifier circuit is configured in such a way that the amplifier circuit includes: a first amplifier to amplify a signal to be amplified; an output matching circuit through which the signal amplified by the first amplifier propagates; and a second amplifier to amplify the signal which has propagated through the output matching circuit, and the output matching circuit is a lumped constant circuit including multiple lumped constant elements, and, by using the multiple lumped constant elements, transforms the impedance seen on the second amplifier side from the first amplifier when the output power of the second amplifier is lower than saturation electric power, to impedance higher than impedance seen on the second amplifier side from the first amplifier when the output power of the second amplifier is equal to the saturation electric power.

A transceiver is configured for a calibration mode of operation in which an impedance of a transmit chain is tuned responsive to a power measurement of a mixed RF calibration signal to form a tuned transmit chain. A direct conversion mixes an RF calibration signal with a DC offset signal to form the mixed calibration signal. During a normal mode of operation, a heterodyne mixer mixes an LO signal with an IF signal to produce an RF signal that is amplified through the tuned transmit chain.

Apparatus and methods for biasing of low noise amplifiers (LNAs) are provided herein. In certain embodiments, an LNA includes at least one transistor that amplifies a radio frequency (RF) input signal, and a bias circuit including a current bias circuit that generates a bias current based on a reference current and a voltage bias circuit that generates at least one input bias voltage for the at least one transistor based on the bias current. The current bias circuit includes a first bias transistor that receives the reference current, a second bias transistor that generates the bias current, and an amplifier that controls a first bias voltage of the first bias transistor to match a second bias voltage of the second bias transistor.

Reconfigurable output baluns for wideband push-pull amplifiers are disclosed. In certain embodiments, a mobile device includes a transceiver that generates a first radio frequency signal of a first frequency band and a second radio frequency signal of a second frequency band, and a front-end system including a push-pull power amplifier that selectively amplifies one of the first radio frequency signal or the second radio frequency signal based on a band control signal. The push-pull power amplifier includes an input balun, an output balun, and a pair of amplifiers coupled between the input balun and the output balun. The band control signal is operable to control an impedance of the output balun.

Power amplifier systems including power amplifier modules (PAMs) and electromagnetic bandgap (EBG) isolation structures are disclosed. In embodiments, the power amplifier system includes a printed circuit board (PCB) and a PAM mounted to the PCB in an inverted orientation. The PCB has a PCB frontside on which a PAM mount region is provided, and radio frequency (RF) input and output bondpads. The PAM includes a topside input/output interface having RF input and output terminals electrically coupled to the RF input and output pads, respectively. The power amplifier system further includes a first EBG isolation structure containing a first grounded EBG cell array, at least a portion of which is located within or beneath the PAM mount region.

A radio frequency module includes a module substrate; a power amplifier disposed on or over the module substrate, amplifies a radio frequency signal, and outputs the amplified radio frequency signal as the first transmission signal; a power amplifier disposed on or over the module substrate, amplifies a radio frequency signal, and outputs the amplified radio frequency signal as the second transmission signal; a temperature sensor disposed on or over the module substrate; and a PA control circuit disposed on or over the module substrate and controls amplification operations of the power amplifiers according to a measurement value of the temperature sensor. The maximum output power of the power amplifier is greater than the maximum output power of the power amplifier, and the distance between the temperature sensor and the power amplifier is less than or equal to the distance between the temperature sensor and the power amplifier.

An electronic device may include wireless circuitry with a processor, a transceiver, an antenna, and a front-end module coupled between the transceiver and the antenna. The front-end module may include one or more radio-frequency amplifiers for amplifying a radio-frequency signal. The radio-frequency amplifier may include input transistors cross-coupled with capacitance neutralization transistors and/or coupled to cascode transistors. One or more n-type gain adjustment transistors may be coupled to source terminals of the capacitance neutralization transistors. One or more p-type gain adjustment transistors may be coupled to source terminals of the cascode transistors. One or more processors in the electronic device can selectively activate one or more of the gain adjustment transistors to reduce the gain of the radio-frequency amplifier without degrading noise performance and without altering the in-band frequency response of the radio-frequency amplifier.