A high-frequency amplifier for an active EMI filter with a symmetric class B emitter-follower output stage driven by a driver stage, with a sense output resistor. Both terminals of the sense resistor are brought to the noninverting, respecting inverting input of the driver stage through two dividers of the same ratio, in a global voltage feedback loop. The amplifier is configured to provide a high output impedance at 10 kHz and up to 100 MHz, a peak-to-peak output current of 2-10 ampere and a low quiescent current of less than 400 mA. The invention includes EMI filters with such a high-frequency current source, for example in the current-sense current-inject feedback configuration.

A method includes receiving first data associated with a first power amplifier and second data associated with a second power amplifier. The method also includes generating a first amplitude limiting signal having gain parameters that are based on the first data and the second data. The first data includes at least one of a temperature measurement associated with the first power amplifier, a supply voltage measurement associated with the first power amplifier, a load resistance associated with the first power amplifier, or a gain associated with the first power amplifier. The method further includes modifying an audio signal based at least in part on the first amplitude limiting signal to generate a first gain-adjusted audio signal. The method also includes providing a first output audio signal to the first power amplifier for amplification. The first output audio signal is based at least in part on the first gain-adjusted audio signal.

A power amplifier device includes: a first power supply terminal for inputting a first power supply voltage; a first transistor for power amplification that (i) includes a first gate to which a bias voltage is applied, and (ii) is supplied with power from the first power supply terminal; a second power supply terminal for inputting a second power supply voltage lower than the first power supply voltage; a second transistor for monitoring that (i) includes a second gate to which the bias voltage is applied, (ii) is supplied with power from the first power supply terminal or the second power supply terminal, and (iii) imitates an operation of the first transistor; and a bias circuit that is supplied with power from the second power supply terminal and generates and adjusts the bias voltage according to a drain current or a source current of the second transistor.

Certain aspects of the present disclosure are generally directed to circuitry and techniques for voltage-to-current conversion. For example, certain aspects provide a circuit for signal amplification including a first amplifier; a first transistor, a gate of the first transistor being coupled to an output of the first amplifier and a drain of the first transistor being coupled to an output node of circuit; a first resistive element coupled between a first input node of the circuit and an input of the first amplifier; a second amplifier; a second transistor, a gate of the second transistor being coupled to an output of the second amplifier and a drain of the second transistor being coupled to the output node of circuit; and a second resistive element coupled between a second input node of the circuit and an input of the second amplifier.

A system is disclosed which allows for canceling high frequency rail to rail common mode swing at pulse-width modulation (PWM) frequency for a Class-D, H and G audio amplifier or a Linear Resonance Actuator (LRA) driver. This allows wide bandwidth current sensing without the need of external components, or large on-chip resistor-capacitor (RC) networks, facilitating integration of the sense resistor. In addition, the sense amplifier DC input common mode and audio band common mode swing is reduced, allowing a sense resistor high frequency common mode swing of a least twice the MOSFET gate break down voltages.

A conversion circuit for converting a current signal into a first output voltage signal, where the current signal flows through a sensing component, is provided. The conversion circuit includes: a first current eliminating circuit, configured to eliminate a first current in the current signal. The first current eliminating circuit includes: a current sample and hold circuit; and a current driving circuit, coupled between the sensing component and the current sample and hold circuit; a second current eliminating circuit, coupled to the sensing component and configured to eliminate a second current in the current signal; and an integrating circuit, coupled to the sensing component and configured to integrate a third current in the current signal, and output a first input voltage signal between a first integration output terminal and a second integration output terminal.

A wireless communication device includes a signal generator supply a signal to an input node to which a power amplifier is connected. The power amplifier includes an inverter including a first transistor with a gate connected to the input node via a first signal path and a second transistor with a gate electrode connected to the input node via a second signal path. An output signal corresponding to the signal supplied to the input node is supplied from an output node between the first and second transistors. A filter is connected to the output node and outputs a filtered signal having a high frequency component removed. A bias application unit applies a first bias voltage to the first signal path and a second bias voltage to the second signal path. Levels of the bias voltages being set according to a direct current component in the filtered signal.

Circuits for protecting devices, such as gallium nitride (GaN) devices, and operating methods thereof are described. The circuits monitor a magnitude of the current in a device and reduce the magnitude of the current and/or shut down the device responsive to the magnitude of the current exceeding a threshold. These circuits safeguard devices from damaging operating conditions to prolong the operating life of the protected devices.

Circuits for protecting devices, such as gallium nitride (VcclGaN) devices, and operating methods thereof are described. The circuits monitor a magnitude of the current in a device and reduce the magnitude of the current and/or shut down the device responsive to the magnitude of the current exceeding a threshold. These circuits safeguard devices from damaging operating conditions to prolong the operating life of the protected devices.

A balanced differential transimpedance amplifier with a single-ended input operational over a wide variation in the dynamic range of input signals. A threshold circuit is employed to either or a combination of (1) generate a varying decision threshold to ensure a proper slicing over a wide range of input current signal levels; and (2) generate a bias current and voltage applied to an input of a transimpedance stage to cancel out a dependence of the transimpedance stage voltage input on input current signal levels.