A transmitter including a frequency synthesizer with a voltage-controlled oscillator that provides an oscillating signal, a programmable delay circuit that delays the oscillating signal to provide a delayed oscillating signal, a power amplifier that is configured to use the delayed oscillating signal for transmitting a signal, and a delay controller that programs the delay circuit with a delay time that reduces interference caused by coupling from the power amplifier to the voltage-controlled oscillator. The delay circuit may be programmed to reduce control voltage change of the voltage-controlled oscillator as a function of delay change, and/or to reduce phase noise degradation at an output of the transmitter as a function of delay change. The delay may be adjusted based on detected operating temperature. A calibration value may be determined at a calibration frequency, in which a frequency offset may be determined based on a selected channel frequency.

A charge amplifier includes: an input line through which an electric charge signal is propagated; an integration circuit including an input terminal coupled to the input line and an output terminal that outputs the voltage signal; a reset switch configured to reset the voltage signal by closing between the input terminal and the output terminal; a leakage current correction circuit including a first resistance circuit and a first switch coupled in series in this order between a first node, which has a first potential different from a potential of the input line, and the input line; and a control circuit configured to control the first switch based on the voltage signal so as to cancel at least a part of a leakage current flowing through the integration circuit.

A power amplifier system having a power amplifier with a signal input and a signal output and bias circuitry is disclosed. The bias circuitry includes a bandgap reference circuit coupled between a reference node and a fixed voltage node. A bias generator has a bias input coupled to the reference node and a bias output coupled to the signal input. Also included is a first digital-to-analog converter having a first converter output coupled to the reference node, a first voltage input, and a first digital input, wherein the first digital-to-analog converter is configured to adjust a reference voltage at the reference node in response to a first digital setting received at the first digital input. The first digital setting correlates with an indication of temperature of the power amplifier.

An electronic device including: a modem configured to process a baseband signal; an intermediate frequency (IF) transceiver configured to convert the baseband signal provided from the modem into an IF band signal; and a radio frequency (RF) transceiver configured to convert the IF band signal provided from the IF transceiver into an RF band signal, wherein the RF transceiver includes a power amplifier configured to amplify the RF band signal, and a temperature sensor unit to detect a temperature of the power amplifier, and wherein the modem includes a controller configured to control an input power inputted to the RF transceiver based on the temperature of the power amplifier detected by the temperature sensor unit.

A power amplifier module includes a power amplifier including an amplifier including an amplifying transistor configured to amplify an input signal, and output an output signal, and a bias circuit including a bias transistor configured to provide a bias current to the amplifying transistor; and a controller configured to provide a control current to the bias transistor, wherein the controller is configured to vary the control current based on a temperature of the amplifying transistor.

A wireless access point is configured to regularly monitor the status of WLAN, WAN and ePDG data links to determine whether the current connections are sufficient to support VoWiFI services. When a device connects to the WLAN of the hub and attempts to switch from its VoLTE service to VoWiFi via the hub, the hub is configured to determine whether the current conditions can satisfy a VoWiFi connection. If the VoWiFi service can support the connection, the request is routed to the ePDG associated with the mobile device's subscriber LTE network. However, if the current conditions cannot satisfactorily support a VoWiFi connection such that incoming calls may be missed or the quality of active calls would not be clear, then the hub is configured to block the request so that the client device will time out and remain connected to VoLTE.

Thermal temperature sensors for power amplifiers are provided herein. In certain implementations, a semiconductor die includes a compound semiconductor substrate, and a power amplifier including a plurality of field-effect transistors (FETs) configured to amplify a radio frequency (RF) signal. The plurality of FETs are arranged on the compound semiconductor substrate as a transistor array. The semiconductor die further includes a semiconductor resistor configured to generate a signal indicative of a temperature of the transistor array. The semiconductor resistor is located adjacent to one end of the transistor array.

Included are: a first power source 3 configured to output a voltage required for a first gate bias voltage for turning a power amplifier 2 to an ON state; a second power source 4 configured to output a voltage required for a second gate bias voltage for turning the power amplifier 2 to an OFF state; a changeover switch 5 connected between the first power source 3 and the power amplifier 2 and configured to supply either the first gate bias voltage or the second gate bias voltage to the power amplifier 2 by switching a state between the first power source 3 and the power amplifier 2 to either an open state or a short-circuit state on the basis of a control signal related to on-off control of the power amplifier 2; and a resistance value varying unit 15 connected between the second power source 4 and the power amplifier 2 and configured such that a resistance value thereof is variable.

A temperature adaptive audio amplifier device includes a digital analog convertor, a gain controller, an amplifier, a temperature sensor and a decision circuit. The digital analog convertor transforms a digital audio signal into an analog convertor. The gain controller includes a gain value and is configured to perform gain processing on the analog audio signal and generate a gained analog audio signal. The amplifier is configured to amplify the gained analog audio signal and generates an amplified analog audio signal. The temperature sensor generates a temperature detect signal according to a junction temperature of the amplifier. The decision circuit receives the temperature detect signal and generates an adaptive gain adjustment signal to the gain controller. The adaptive gain adjustment signal is used to adjust the junction temperature of the amplifier to be within an upper temperature threshold and a lower temperature threshold.

The invention provides method and associated controller for improving temperature adaptability of an amplifier; the method may include: receiving a temperature value, and adjusting a supply voltage supplied to the amplifier according to the temperature value.