A slew rate adjusting circuit includes an adjustment transistor configured to provide an adjustment current into an output port of an arithmetic amplifier, a first transistor connected between a power line of the arithmetic amplifier and the adjustment transistor, and a second transistor connected between the first transistor and an output node of the output port, wherein the adjustment transistor is turned on by the second transistor in response to a difference between an input voltage and an output voltage being equal to or greater than a reference voltage, and the adjustment current is provided to the output port in response to the adjustment transistor being turned on.

Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor with a drain-source capacitance that is relatively low, an input impedance matching circuit, and an input-side harmonic termination circuit. The input impedance matching circuit includes a harmonic termination circuit, which in turn includes a first inductance (a first plurality of bondwires) and a first capacitance coupled in series between the transistor output and a ground reference node. The input impedance matching circuit also includes a second inductance (a second plurality of bondwires), a third inductance (a third plurality of bondwires), and a second capacitance coupled in a T-match configuration between the input lead and the transistor input. The first and second capacitances may be metal-insulator-metal capacitors in an integrated passive device.

A power amplification device comprises an amplifying unit and a combining unit. The amplifying unit is provided with a plurality of groups of amplifier circuits that amplifies the power of a radio frequency signal. The plurality of groups of amplifier circuits each includes a predetermined number of the amplifier circuits. The combining unit includes a plurality of combiners. The amplifying unit is housed by a first housing and the combining unit is housed by a second housing which is separate from the first housing. The amplifying unit is configured to be attachable to and detachable from the combining unit. The amplifying unit is configurable by one or more control voltages to perform amplification in classes AB, B and/or C. The amplification in classes AB, B, and/or C is compatible with a type of the combiner.

A power amplification device capable of detaching an element relating to the power amplification of an RF signal from an element relating to the combining of RF signals. The amplifying unit 1 is provided with a plurality of groups of amplifier circuits 2 that amplifies the power of a RF signal and the plurality of groups of amplifier circuits each includes a predetermined number of the amplifier circuits 2. A combining unit 5 includes a first combiner 7 and a second combiner 8. The first combiner 7 is provided in association with the group of the amplifier circuits 2, combines RF signals output from the amplifier circuits 2 belonging to the corresponding group, and outputs the RF signal after combining. The second combiner 8 combines the RF signals output from each first combiner 7 and outputs the RF signal after combining. Each first combiner 7 is a combiner usable for an RF signal in a specific frequency band. The amplifying unit 1 is attachable to and detachable from the combining unit 5.

Embodiments of an RF amplifier include a transistor with a control terminal and first and second current carrying terminals, and a shunt circuit coupled between the first current carrying terminal and a ground reference node. The shunt circuit includes a first shunt inductive element, a second shunt inductance, and a shunt capacitor coupled in series. Instead of a separate inductive element, the second shunt inductance may be achieved via magnetic coupling of the first shunt inductive element and an envelope inductive element of a video bandwidth circuit that is coupled between an RF cold point node (between the first and second shunt inductances) and the ground. Alternatively, an envelope inductance in the video bandwidth circuit may be achieved via magnetic coupling of first and second shunt inductive elements. A better RF cold point may be achieved without physically incorporating separate inductive elements, allowing for reduction in cost and size.

A power amplification device capable of detaching an element relating to the power amplification of an RF signal from an element relating to the combining of RF signals. The amplifying unit 1 is provided with a plurality of groups of amplifier circuits 2 that amplifies the power of a RF signal and the plurality of groups of amplifier circuits each includes a predetermined number of the amplifier circuits 2. A combining unit 5 includes a first combiner 7 and a second combiner 8. The first combiner 7 is provided in association with the group of the amplifier circuits 2, combines RF signals output from the amplifier circuits 2 belonging to the corresponding group, and outputs the RF signal after combining. The second combiner 8 combines the RF signals output from each first combiner 7 and outputs the RF signal after combining. Each first combiner 7 is a combiner usable for an RF signal in a specific frequency band. The amplifying unit 1 is attachable to and detachable from the combining unit 5.

Frequency characteristics of a peaking stage can vary depending on variations in the process used to fabricate the peaking stage. For example, depending on the batch of wafers and where on a wafer the peaking stage is formed, the capacitors and resistors may have different values, thereby changing the frequency characteristics of the peaking stage. The embodiments herein describe a peaking stage that is invariant of the process variation. That is, one or more of the frequency characteristics of the peaking stages do not vary as the values of a capacitor or resistor change. As such, peaking stages formed in different process corners on the wafer have the same frequency characteristics, and thus, function in a similar manner.

Frequency characteristics of a peaking stage can vary depending on variations in the process used to fabricate the peaking stage. For example, depending on the batch of wafers and where on a wafer the peaking stage is formed, the capacitors and resistors may have different values, thereby changing the frequency characteristics of the peaking stage. The embodiments herein describe a peaking stage that is invariant of the process variation. That is, one or more of the frequency characteristics of the peaking stages do not vary as the values of a capacitor or resistor change. As such, peaking stages formed in different process corners on the wafer have the same frequency characteristics, and thus, function in a similar manner.

A multi-stage Radio Frequency (RF) power amplifier is presented herein. According to one embodiment, the amplifier comprises: a first amplification stage configured to amplify an input signal to provide a first output signal having a phase distortion; a second amplification stage having an input and configured to amplify the first output signal that is received at the input to provide a second output signal, wherein the second output signal has a carrier frequency (F.sub.C) modulated by a signal content (S) having a signal content bandwidth (F.sub.S); and a resonant circuit comprising an inductor and a capacitor and having a resonant frequency (F.sub.R), the resonant circuit coupled to the input of the second amplification stage and compensating for the phase distortion caused by the first amplification stage at frequencies within the signal content bandwidth F.sub.S, wherein the resonant frequency F.sub.R is less than the signal content bandwidth F.sub.S.

Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor, an impedance matching circuit, and a video bandwidth circuit. The impedance matching circuit is coupled between the transistor and an RF I/O (e.g., an input or output lead). The video bandwidth circuit is coupled between a connection node of the impedance matching circuit and a ground reference node. The video bandwidth circuit includes a plurality of components, which includes an envelope inductor and an envelope capacitor coupled in series between the connection node and the ground reference node. The video bandwidth circuit further includes a first bypass capacitor coupled in parallel across one or more of the plurality of components of the video bandwidth circuit.