An amplifying circuit is provided. The amplifying circuit includes a bias circuit receiving an operating voltage from a power supply circuit and generating a first bias voltage, a resistance circuit connected between the bias circuit and a gate node and transferring the first bias voltage to the gate node, a start-up circuit generating a high-level start-up voltage and supplying the start-up voltage to the gate node before the operating voltage is supplied, based on a control signal, and an amplifier started-up by receiving the start-up voltage and then receiving the operating voltage and the first bias voltage to amplify a high frequency signal input through the gate node.

Methods and apparatus for providing adaptive biasing to power amplifiers. Adaptive bias circuits are configured to provide sharp turn on and/or current clamping to improve the efficiency of a power amplifier over a wide input signal bandwidth. Sharp turn on may be achieved using a subtraction technique to subtract outputs from multiple detectors. Clamping may be achieved using MOSFET device characteristics to pull the device from the triode region into the saturation, subtraction techniques to subtract the outputs from multiple detectors, and/or by using circuit devices, such as diodes.

A power amplification circuit includes: a first amplifier that is input with a first signal and outputs a second signal; a bias circuit that supplies a bias current or voltage to the first amplifier; and a control voltage generating circuit that generates a control voltage in accordance with the first signal. The bias circuit includes a first transistor that outputs the bias current or voltage, a second transistor provided between the emitter or source of the first transistor and ground, and a third transistor that is supplied with the control voltage and that supplies a first current or voltage to the second transistor. The value of the first current or voltage when the signal level is a first level is larger than the value of the first current or voltage when the signal level is a second level. The first level is higher than the second level.

A bias circuit is adapted for biasing a to-be-biased transconductance cell such that the to-be-biased transconductance cell has a constant transconductance, and includes a converter and a controller. The converter receives first and second current signals, and generates, based on the first and second current signals, a first voltage signal, a second voltage signal and a bias voltage that is for biasing the to-be-biased transconductance cell. The controller receives the first and second voltage signals from the converter, generates the first and second current signals for the converter based on the first and second voltage signals so as to make a magnitude of the first voltage signal equal a magnitude of the second voltage signal.

In accordance with an embodiment, a method includes determining an amplitude of an input signal provided by a capacitive signal source, compressing the input signal in an analog domain to form a compressed analog signal based on the determined amplitude, converting the compressed analog signal to a compressed digital signal, and decompressing the digital signal in a digital domain to form a decompressed digital signal. In an embodiment, compressing the analog signal includes adjusting a first gain of an amplifier coupled to the capacitive signal source, and decompressing the digital signal comprises adjusting a second gain of a digital processing block.

An amplifier includes an input terminal for receiving an input signal, an output terminal for outputting an output signal, a first transistor, a second transistor having a first terminal coupled to a second terminal of the first transistor, a third transistor having a first terminal coupled to a second terminal of the second transistor, a capacitor coupled between a control terminal and a second terminal of the third transistor, a bias circuit coupled to the first terminal of the third transistor for providing a bias voltage to the third transistor, a fourth transistor having a first terminal coupled to the input terminal and a second terminal coupled to the output terminal for providing a bypass path, and a fifth transistor having a first terminal coupled to the first terminal of the first transistor and a second terminal coupled to the output terminal.

A power switch 307a is provided between a bias generation circuit 301 and a high potential power source, or a power switch 307b is provided between the bias generation circuit 301 and a low potential power source. A bias potential Vb output from the bias generation circuit 301 is held by a potential holding circuit 300. The bias potential Vb held by the potential holding circuit 300 is input to a bias generation circuit 301a, and a bias potential Vb2 output from the bias generation circuit 301a on which an input signal IN is superimposed is input to an amplifier circuit 302. The potential holding circuit 300 is constituted of a capacitor 306 and a switch 305 formed of, for example, a transistor with a low off-state current that is formed using a wide band gap oxide semiconductor. Structures other than the above structure are claimed.

Embodiments of the invention provide an apparatus for amplifying a radio frequency transmission signal, comprising: an envelope signal obtaining unit (210) configured to obtain a slow envelope signal indicating a time averaging amplitude component of the radio frequency signal and a fast envelope signal indicating an instant amplitude component of the radio frequency signal; a supply voltage modulating unit (230) configured to provide an output modulated supply voltage to the power amplifying unit by modulating a direct current supply voltage based on both the slow envelope signal and the fast envelope signal; and a power amplifying unit (220) configured to amplify power of the radio frequency transmission signal according to the output modulated supply voltage.

Described embodiments provide a radio frequency (RF) amplifier system having at least one amplifier. The at least one amplifier includes an RF input port, an RF output port and a drain bias port. At least one voltage modulator is coupled to the bias port of the least one amplifier to provide a bias voltage. The bias voltage is selected by switching among a plurality of discrete voltages. At least one filter circuit is coupled between the at least one voltage modulator and the at least one amplifier. The at least one filter circuit controls spectral components resultant from transitions in the bias voltage when switching among the plurality of discrete voltages. A controller dynamically adapts at least one setting of the at least one voltage modulator by using multi-pulse transitions when switching among the plurality of discrete voltages for a first operating condition of the RF amplifier.

A power amplifier has improved power added efficiency at high output power. The power amplifier includes: a first transistor for amplifying an input signal input to the base thereof and outputting the amplified signal from the collector thereof; a second transistor with power-supply voltage applied to the collector thereof to supply bias voltage or bias current from the emitter thereof to the base of the first transistor; a third transistor whose collector is connected to the collector of the first transistor to amplify the input signal input to the base thereof and output the amplified signal from a collector thereof; a fourth transistor whose base and collector are connected to supply bias from the emitter thereof to the base of the third transistor; and a first resistor with bias control voltage applied to one end thereof and the other end connected to the bases of the second and fourth transistors.