A circuit includes a reference voltage circuit, a filter circuit configured to receive an output of the reference voltage circuit, and a voltage follower configured to receive an output of the filter circuit and generate a bias voltage. The filter circuit is configured to combine signals on a reference ground with the output of the reference voltage circuit. A method of providing a bias voltage includes generating a reference voltage using a reference voltage circuit, filtering the reference voltage to generate a second voltage using a filter circuit, and generating the bias voltage according to the second voltage using a voltage follower circuit. Filtering the reference voltage includes combining a fluctuation of the reference ground with the reference voltage.

According to one embodiment, in a semiconductor integrated circuit, a first input terminal of an error amplifier is electrically connected to a third node between a second node and a reference potential. A second input terminal of the error amplifier is electrically connected to a reference voltage. An output terminal of the error amplifier is electrically connected to a gate of an output transistor. A first input terminal of a comparator is electrically connected to a fourth node between the second node and the reference potential. A second input terminal of the comparator is electrically connected to the reference voltage. One end of a coupling capacitance is electrically connected to an output terminal of the comparator. A gate of an auxiliary transistor is electrically connected to the other end of the coupling capacitance. A drain of the auxiliary transistor is electrically connected to the second node.

A power amplification apparatus which is a Doherty power amplification apparatus includes a main amplifier configured to amplify an input signal, and an auxiliary amplifier configured to amplify the input signal when a level of the input signal is higher than a predetermined level. The power amplification apparatus includes an auxiliary amplifier threshold value shift detector configured to detect a threshold value shift in the auxiliary amplifier; and an auxiliary amplifier bias voltage adjustment circuit configured to adjust a bias voltage of the auxiliary amplifier based on the detected threshold value shift in the auxiliary amplifier.

An electronic package houses one or more RF amplifier circuits. At least one of an input or output impedance matching network integrated on the package and electrically coupled to the gate or drain bias voltage connection, respectively, of an amplifier circuit, includes a multi-stage decoupling network. Each multi-stage decoupling network includes two or more decoupling stages. Each decoupling stage of the multi-stage decoupling network includes a resistance, inductance, and capacitance, and is configured to reduce impedance seen by the amplifier circuit at a different frequency below an operating band of the amplifier circuit. Bias voltage connections to the impedance matching circuits may be shared, and may be connected anywhere along the multi-stage decoupling network.

A variable current trans-impedance amplifier (TIA) for an ultrasound device is described. The TIA may be coupled to an ultrasonic transducer to amplify an output signal of the ultrasonic transducer representing an ultrasound signal received by the ultrasonic transducer. During acquisition of the ultrasound signal by the ultrasonic transducer, one or more current sources in the TIA may be varied.

A device having device function circuitry configured to receive a device signal and output a modified device signal is disclosed. The device includes a device temperature sensor configured to generate a device temperature signal that is proportional to a temperature of the device function circuitry. The device function circuitry is further configured to maintain power dissipation of the device function circuitry to below a predetermined safe power dissipation level in response to a control signal that is generated based upon the device temperature signal.

Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.

A power amplifier circuit includes an amplifier transistor which amplifies a radio frequency signal applied to its base and outputs the amplified signal; a resistance element having a first end, and a second end electrically connected to the base of the amplifier transistor; a first bias transistor having a collector to which a first voltage is applied, a base to which a first bias voltage is applied, and an emitter electrically connected to the first end of the resistance element and which supplies a bias current to the base of the amplifier transistor through the resistance element; and a second bias transistor having an emitter electrically connected to the emitter of the first bias transistor and the first end of the resistance element, a base to which a second bias voltage is applied, and a collector to which a second voltage lower than the first voltage is applied.

The amplifier includes an input circuit configured to convert an input signal into a current; an output circuit comprising at least one switching element for reducing a voltage change of an output end of the input circuit and configured to provide an output signal; and a biasing circuit connected to the at least one switching element to form a feedback loop for reducing the voltage change of the output end of the input circuit.

A power amplifier with feedback ballast resistance is disclosed. In one aspect, a power amplifier cell may receive a bias signal from a bias circuit where the bias circuit includes a feedback loop having an impedance that, from the perspective of the bias signal is relatively low impedance, but from a ballast thermal control perspective provides sufficient resistance to avoid thermal runaway. In exemplary aspects, this feedback loop may be extended to operate with multiple power amplifier cells and provide differential mode thermal control optimized for individual cell bias signal control and common mode thermal control optimized for thermal control of the collective power amplifier cells of the power amplifier.