A wireless receiving device is provided. The wireless receiving device includes a first passive mixer and a common gate amplifier. The first passive mixer receives an oscillation signal. The common gate amplifier is coupled to the first passive mixer, and automatically adjusts the input impedance of the common gate amplifier according to the oscillation frequency of the oscillation signal.

A power amplifier and method for operating the same is disclosed. The amplifier includes a number of transistors coupled in series between a power node and a ground node. These transistors include a first transistor having a source terminal coupled to the power node, and a second transistor having its source terminal coupled to a ground node. A subset of transistors is also coupled in series between the first and second transistors. During operation in a first mode, the first and second transistors act as switching transistors, switching according to data received thereby. The subset of transistors, during the first mode, act as cascode transistors. During a second mode of operation, the transistors of the subset act as switching transistors, switching in accordance with the received data.

pHEMT-based switch circuits, devices including same, and methods of improving the linearity thereof. In one example, an antenna switch module includes a pHEMT switching circuit connected in series between an input signal terminal and a load terminal, the pHEMT switching circuit including at least one pHEMT configured to produce a first harmonic signal at the load terminal responsive to being driven by an input signal of a fundamental frequency received at the input signal terminal, the first harmonic signal having a first phase, and a gate resistance circuit connected to a gate of the at least one pHEMT and having a resistance value selected to produce a second harmonic signal at the load terminal, the second harmonic signal having a second phase opposite to the first phase.

A wireless receiving device is provided. The wireless receiving device includes a first passive mixer and a common gate amplifier. The first passive mixer receives an oscillation signal. The common gate amplifier is coupled to the first passive mixer, and automatically adjusts the input impedance of the common gate amplifier according to the oscillation frequency of the oscillation signal.

A low noise amplifier circuit includes a first low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among first and second band signals; a second low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among third and fourth band signals; an output DPDT circuit including a first input terminal connected to the first low noise amplifier, a second input terminal connected to the second low noise amplifier, and a first output terminal and a second output terminal for selectively outputting signals input through the first input terminal and the second input terminal; and a control circuit performing an amplification control and a switching control for the first and second low noise amplifiers and the output DPDT circuit in response to a predetermined communications scheme.

The present invention relates to a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. In particular, the present invention relates to a solid state device based on a complementary pair of n-type and p-type current field-effect transistors, each of which has two control ports, namely a low impedance port and gate control port, while a conventional solid state device has one control port, namely gate control port. This novel solid state device provides various improvement over the conventional devices.

A power amplifier and method for operating the same is disclosed. The amplifier includes a number of transistors coupled in series between a power node and a ground node. These transistors include a first transistor having a source terminal coupled to the power node, and a second transistor having its source terminal coupled to a ground node. A subset of transistors is also coupled in series between the first and second transistors. During operation in a first mode, the first and second transistors act as switching transistors, switching according to data received thereby. The subset of transistors, during the first mode, act as cascode transistors. During a second mode of operation, the transistors of the subset act as switching transistors, switching in accordance with the received data.

Disclosed is an amplifying circuit and method. In one embodiment, an amplifying circuit, includes: a common-gate (CG) amplifier, wherein the CG amplifier comprises a first transistor, wherein source terminal and body terminal of the first transistor is coupled together through a first resistor.

In some embodiments, a power amplification system can include a common base amplifier configured to amplify an input signal received at an input node to generate an intermediate signal at an intermediate node. The power amplification system can further include a power amplifier configured to amplify the intermediate signal received at the intermediate node to generate an output signal at an output node.

The present disclosure relates to semiconductor structures and, more particularly, to a common-gate amplifier circuit and methods of operation. The structure includes at least one well in a substrate, a first metal layer connected to a gate of a transistor circuit, a second metal layer overlapped over the first metal layer to form a capacitor, and a third metal layer connected with vias to the first metal layer and overlapped with the second metal layer to form a second capacitor. At least one capacitance in at least one of a junction between the at least one well and the substrate and between overlapped metal layers of the first metal layer, the second metal layer, and the third metal layer.