Disclosed are a constant current generation circuit for optocoupler isolation amplifier and a current precision adjustment method. The constant current generation circuit includes a start circuit, a current generation circuit and a precision adjustment and output circuit integrated into a same substrate. The start circuit can generate and output a first start current and a second start current. The current generation circuit includes a negative temperature change rate current generation circuit connected to a first start current output and a positive temperature change rate current generation circuit connected to a second start current output. The precision adjustment and output circuit outputs constant current meeting application requirements of optocoupler isolation amplifier by adjusting proportional precision of two currents output from a current generation circuit. The disclosure forms a constant current output circuit which is independent of temperature changes, power supply voltage changes and changes in technological parameters of current sheets.

An offset drift compensation circuit for correcting offset drift that changes with temperature. In one example, offset drift compensation circuit includes a low temperature offset compensation circuit and a high temperature offset circuit. The low temperature offset compensation circuit is configured to compensate for drift in offset at a first rate below a selected temperature. The high temperature offset compensation circuit is configured to compensate for drift in offset at a second rate above the selected temperature. The first rate is different from the second rate.

A positive high voltage, a first terminal of a semiconductor element, and a first terminal of a first resistance element are connected to a first terminal of a first current controller. A current input terminal of a first active element is connected to a second terminal of the first current controller, and a second terminal of the semiconductor element and a second terminal of the first resistance element are connected to a control terminal of the first active element. A second resistance element is connected between a current output terminal and a control terminal of the first active element. The first current controller allows a drive current corresponding to an input signal to flow in the first active element and allows the drive current output from the first active element to flow into a load, thereby generating an output voltage.

An amplifier with stacked transconducting cells in “current mode combining” is disclosed herein. In one or more embodiments, a method for operation of a high-voltage signal amplifier comprises inputting, into each transconducting cell of a plurality of transconducting cells, a direct current (DC) supply current (Idc), an alternating current (AC) radio frequency (RF) input current (I.sub.RF_IN), and an RF input signal (RF.sub.IN). The method further comprises outputting, by each of the transconducting cells of the plurality of transconducting cells, the DC supply current (Idc) and an AC RF output current (I.sub.RF_OUT). In one or more embodiments, the transconducting cells are connected together in cascode for the DC supply current, and are connected together in cascade for the AC RF input and output currents.

One or more systems, devices and/or methods of use provided herein relate to a baseband filter that can be used in a current-mode end-to-end signal path. The current-mode end-to-end signal path can include a digital to analog converter (DAC) operating in current-mode and an upconverting mixer, operating in current-mode and operatively coupled to the DAC. In one or more embodiments, a device used in the signal path can comprise a baseband filter that receives an input current and outputs an output current. The baseband filter can comprise a feedback loop component having an active circuit branch and a passive circuit branch coupled in a loop. A mirroring device can be coupled to the feedback loop component and can provide an output of the device. Selectively activating the mirroring device can vary gain, such as of the mirroring device.

A semiconductor arrangement in fan out packaging has a molding compound adjacent a side of a semiconductor die. A magnetic structure is disposed above the molding compound, above the semiconductor die, and around a transmission line coupled to an integrated circuit of the semiconductor die. The magnetic structure has a top magnetic portion, a bottom magnetic portion, a first side magnetic portion, and a second side magnetic portion. The first side magnetic portion and the second side magnetic portion are coupled to the top magnetic portion and to the bottom magnetic portion. The first side magnetic portion and the second side magnetic portion have tapered sidewalls.

A protection circuit comprises a first transistor, a comparator, a second transistor, and a third transistor. The first transistor has a gate connected to an input terminal and configured to pass a drain current based on a potential at the input terminal. The comparator has a non-inverting terminal to which a source of the first transistor is connected and an inverting terminal to which a reference voltage is applied. The second transistor has a gate to which an output of the comparator is applied, a source connected to a power supply voltage, and a drain connected to the input terminal. The third transistor has a gate to which a predetermined voltage is applied, a drain connected to the gate of the second transistor, and a source connected to the drain of the input transistor.

A strain sensor is based on a self-biasing reference circuit that reaches an operating state that, at least at first order, is at least supply-voltage independent. The strain sensor provides an output signal that is defined by the operating state of the self-biasing reference circuit. At least one component in the self-biasing reference circuit has an electrical characteristic that depends on a strain to which the at least one component is subjected. This makes that the operating state of the self-biasing reference circuit depends on the strain. As a result, the output signal of the strain sensor varies as a function of the strain to which the at least one component is subjected.

One or more systems, devices and/or methods of use provided herein relate to a device that can support a signal generation. A current-mode end-to-end signal path can include a digital to analog converter (DAC) operating in current-mode and an upconverting mixer, operating in current-mode and operatively coupled to the DAC. Analog inputs and outputs of the DAC and upconverting mixer can be represented as currents, and the DAC can generate a baseband signal. The DAC and upconverting mixer each can comprise switching transistors of the same type, such as p-type metal-oxide semiconductor (PMOS) switching transistors. In one or more embodiments, a current source and a diode-connected transistor can be arranged in parallel in the current-mode signal path, and the current source passes a static current, while the diode-connected transistor passes both a static current and a dynamic current.

An amplifier includes a P-type transistor and an N-type transistor that are connected in series, an operation amplifier, a transformer, and a variable attenuator. In the operation amplifier, an output terminal is coupled to a gate side of one of the P-type transistor and the N-type transistor, one of an inverting input terminal and a non-inverting input terminal is coupled to drain sides of both of the P-type transistor and the N-type transistor, and a reference voltage is to be applied to the other of the inverting input terminal and the non-inverting input terminal. In the transformer, a primary coil is coupled to a source side of one of the P-type transistor and the N-type transistor. The variable attenuator is provided between a secondary coil and gate terminals of both of the N-type transistor and the P-type transistor.