A component (B) comprising a carrier (TR), on which a functional structure (FS) is covered by a thin-layer covering (DSA) spanning across and resting on the carrier. On a planarization layer arranged above the thin-layer covering (DSA), a wiring level (M1, M2) is realized, which comprises structured conductor paths and which is connected via through-connections to the functional structure (FS).

A component (B) comprising a carrier (TR), on which a functional structure (FS) is covered by a thin-layer covering (DSA) spanning across and resting on the carrier. On a planarization layer arranged above the thin-layer covering (DSA), a wiring level (M1, M2) is realized, which comprises structured conductor paths and which is connected via through-connections to the functional structure (FS).

An integrated structure of crystal resonator and control circuit and an integration method therefor. The crystal resonator is formed by first forming the lower cavity (120) in the device wafer (100) containing the control circuit (110), forming the piezoelectric vibrator (200) on the device wafer (100) and then enclosing the piezoelectric vibrator (200) within the upper cavity (400) through forming the cap layer (420) using a planar fabrication process. In addition, a semiconductor die (500) is bonded to the same device wafer (100), helping in enhancing device performance by allowing on-chip modulation of the crystal resonator's parameters. In this way, in addition to being able to integrate with other semiconductor components more easily with a higher degree of integration, the crystal resonator is more compact in size and less power-consuming.

An integrated structure of crystal resonator and control circuit and an integration method therefor. The crystal resonator is formed by first forming the lower cavity (120) in the device wafer (100) containing the control circuit (110), forming the piezoelectric vibrator (200) on the device wafer (100) and then enclosing the piezoelectric vibrator (200) within the upper cavity (400) through forming the cap layer (420) using a planar fabrication process. In addition, a semiconductor die (500) is bonded to the same device wafer (100), helping in enhancing device performance by allowing on-chip modulation of the crystal resonator's parameters. In this way, in addition to being able to integrate with other semiconductor components more easily with a higher degree of integration, the crystal resonator is more compact in size and less power-consuming.

A microelectromechanical system with at least one partly mobile mass element which is suspended from a fixed support by one or more suspension units. Each suspension unit comprises first springs which extend from the fixed support to the partly mobile mass element, and second springs which also extend from the fixed support to the partly mobile mass element. Each second spring is substantially parallel and adjacent to one first spring. The first springs are electrically isolated from the second springs, and the microelectromechanical system comprises a voltage source configured to apply a frequency tuning voltage between the one or more first springs and the one or more second springs.

A radio frequency (RF) front-end (RFFE) device includes a die having a front-side dielectric layer on an active device. The active device is on a first substrate. The RFFE device also includes a microelectromechanical system (MEMS) device. The MEMS device is integrated on the die at a different layer than the active device. The MEMS device includes a cap layer composed of a cavity in the front-side dielectric layer of the die. The cavity in the front-side dielectric layer is between the first substrate and a second substrate. The cap is coupled to the front-side dielectric layer.

A carbon nanotube (CNT) resonator includes: a first CNT having a first end and a second end both fixed to a substrate; and a second CNT having a first end fixed to the substrate. The second CNT creates a Van der Waals (VdW) bond with the first CNT where the second CNT overlaps the first CNT. A length of the VdW bond along a distance between the first and the second CNTs oscillates based on a DC voltage applied between the first end of the first CNT and the first end of the second CNT. An electrical current passing through the first and the second CNTs using the VdW bond oscillates based on the oscillation of the length of the VdW bond.

In examples, a device comprises a semiconductor die, a thin-film layer, and an air cavity positioned between the semiconductor die and the thin-film layer. The air cavity comprises a resonator positioned on the semiconductor die. A rib couples to a surface of the thin-film layer opposite the air cavity.

In examples, a device comprises a semiconductor die, a thin-film layer, and an air cavity positioned between the semiconductor die and the thin-film layer. The air cavity comprises a resonator positioned on the semiconductor die. A rib couples to a surface of the thin-film layer opposite the air cavity.

A continuous or distributed resonator geometry is defined such that the fabrication process used to form a spring mechanism also forms an effective mass of the resonator structure. Proportional design of the spring mechanism and/or mass element geometries in relation to the fabrication process allows for compensation of process-tolerance-induced fabrication variances. As a result, a resonator having increased frequency accuracy is achieved.