H03H3/007

Temperature stable MEMS resonator

A resonant member of a MEMS resonator oscillates in a mechanical resonance mode that produces non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member. A plurality of openings within a surface of the resonant member are disposed more densely within the first region than the second region and at least partly filled with a compensating material that reduces temperature dependence of the resonant frequency corresponding to the mechanical resonance mode.

BULK ACOUSTIC WAVE DEVICE PACKAGING WITH REDISTRIBUTION USING SILICON DIOXIDE INSULATION
20230115592 · 2023-04-13 ·

An electronic device package comprises an electrical device disposed on a base substrate, a conductive column in electrical communication with the electrical device and having a first end bonded to the base substrate, a cap substrate disposed over the electrical device and bonded to a second end of the conductive column, a layer of dielectric material disposed on the lower surface of the base substrate, a through substrate via in electrical communication with the conductive column and passing through the base substrate and the layer of dielectric material, a redistribution layer disposed on the layer of dielectric material, and a contact pad formed on the redistribution layer and in electrical communication with the through substrate via through the redistribution layer, the contact pad being horizontally displaced from a position directly below the through substrate via.

MICROELECTROMECHANICAL OSCILLATORS PRODUCING UNIQUE IDENTIFIERS
20230143362 · 2023-05-11 ·

Described herein is using an array of microelectromechanical systems (MEMS) oscillators to produce unique identifiers. At least some of the MEMS oscillators will “couple” or influence each other when exposed to an external stimulus, such that the frequency of the device is not equal to the combination of individual MEMS oscillator frequencies. The frequency of the device provides a unique “fingerprint” that allows the device to be identified with accuracy but is incredibly difficult to copy, meaning the response may be a physical unclonable function (PUF).

ELECTRONIC PACKAGE STRUCTURE

The present disclosure provides a semiconductor package structure. The semiconductor package structure includes a substrate, a first electronic component and a support component. The first electronic component is disposed on the substrate. The first electronic component has a backside surface facing a first surface of the substrate. The support component is disposed between the backside surface of the first electronic component and the first surface of the substrate. The backside surface of the first electronic component has a first portion connected to the support component and a second portion exposed from the support component.

RESONANCE DEVICE AND RESONANCE DEVICE MANUFACTURING METHOD
20230208392 · 2023-06-29 ·

A resonance device that includes a MEMS substrate, a top cover, and a bonding part. The MEMS substrate includes a resonator. The bonding part is electrically conductive and bonds the MEMS substrate and the top cover to each other. The MEMS substrate further includes a wiring line layer and an anti-diffusion layer. The wiring line layer is electrically connected to a Si substrate serving as a lower electrode of the resonator. The anti-diffusion layer electrically connects the wiring line layer and the bonding part to each other.

RESONANCE DEVICE AND RESONANCE DEVICE MANUFACTURING METHOD
20230208392 · 2023-06-29 ·

A resonance device that includes a MEMS substrate, a top cover, and a bonding part. The MEMS substrate includes a resonator. The bonding part is electrically conductive and bonds the MEMS substrate and the top cover to each other. The MEMS substrate further includes a wiring line layer and an anti-diffusion layer. The wiring line layer is electrically connected to a Si substrate serving as a lower electrode of the resonator. The anti-diffusion layer electrically connects the wiring line layer and the bonding part to each other.

SWITCHABLE FILTERS AND DESIGN STRUCTURES

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

SWITCHABLE FILTERS AND DESIGN STRUCTURES

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

MEMS DEVICE FOR HARVESTING SOUND ENERGY AND METHODS FOR FABRICATING SAME
20170366107 · 2017-12-21 ·

Micro-Electro-Mechanical System (MEMS) devices for harvesting sound energy and methods for fabricating MEMS devices for harvesting sound energy are provided. In an embodiment, a method for fabricating a MEMS device for harvesting sound energy includes forming a pressure sensitive MEMS structure disposed over a semiconductor substrate and including a suspended structure in a cavity. Further, the method includes etching the semiconductor substrate to form an acoustic port through the semiconductor substrate configured to allow acoustic pressure to deflect the suspended structure.

MEMS RESONATOR

Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.