Techniques are described herein for dynamically adjusting a resonant frequency of a resonance circuit to optimize power transfer to a mirror device such as a MEMS mirror. A variable capacitance circuit can be operated responsive to a bias control signal. A capacitance control circuit can vary the bias control signal to the resonance circuit responsive to a sense signal. The sense circuit is configured to generate the sense signal responsive to an output of the mirror device. By monitoring a signal level from the output of the mirror device 130, and adjusting the bias control signal of the resonance circuit, the exact resonance frequency of the resonance circuit can be adjusted until a peak signal level is observed, thus improving the efficiency of the energy transferred from the driver circuit 110 to the mirror device 130, and counteracting the impact of parasitic capacitances on the resonance.

A method is provided for detecting a perturbation with respect to an initial state, of a device including at least one resonant mechanical element exhibiting a physical parameter sensitive to a perturbation such that the said perturbation modifies the resonance frequency of the said resonant mechanical element. A device is provided for detecting a perturbation by hysteretic cycle having at least one electromechanical resonator with nonlinear behavior and means for actuation and detection of the reception signal via a transducer so as to analyze the response signal implementing the method. A mass sensor and a mass spectrometer using the device are also provided.

A power switch including input and output lines of characteristic impedance Z0, and a switching area connected serially between the input and output lines, the switching area being formed by N (integer?2) parallel conducting branches and i belonging to {1, . . . , N}, each conducting branch having, from input to output lines of the switch, an input line portion with characteristic impedance Zbei in series with a switching circuit in series with an output line portion with characteristic impedance Zbsi, the switching circuit configured, in a first state, to block passage of a signal between the input and output line portions of the conducting branch and, in a second state, to transmit a signal between the input line portion and the output line portion of the conducting branch with a maximum reflection coefficient of 0.316, each of the characteristic impedances Zbei and Zbsi ranging from 0.75*N*Z0 to 1.35*N*Z0.

A microelectromechanical resonant circulator device is providing, having a substrate, and at least three electrical ports supported on the substrate. At least three electromechanical resonator elements are connected with associated switch elements and an associated port. The switch elements are operative to provide commutation over time of the electromechanical resonator elements.

A microelectromechanical system (MEMS) device includes a temperature compensating structure including a first beam suspended from a substrate and a second beam suspended from the substrate. The first beam is formed from a first material having a first Young's modulus temperature coefficient. The second beam is formed from a second material having a second Young's modulus temperature coefficient. The body may include a routing spring suspended from the substrate. The routing spring may be coupled to the first beam and the second beam. The routing spring may be formed from the second material. The first beam and the second beam may have lower spring compliance than the routing spring. The MEMS device may be a resonator and the temperature compensating structure may have dimensions and a location such that the temperature compensation structure modifies a temperature coefficient of frequency of the resonator independent of a mode shape of the resonator.