Patent classifications
H03H9/15
Guided wave devices with selectively loaded piezoelectric layers
A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.
BULK ACOUSTIC WAVE FILTER AND MANUFACTURING METHOD THEREOF, COMMUNICATION DEVICE
A bulk acoustic wave filter, a manufacturing method thereof, and a communication device are disclosed. The bulk acoustic wave filter includes a first filter substrate and a second filter substrate; the first filter substrate includes a first base substrate and a first resonator, a first electrode pad and a first auxiliary pad arranged on the first base substrate; the second filter substrate includes a second base substrate and a second resonator, a second electrode pad and a second auxiliary pad arranged on the second base substrate, the first filter substrate is arranged opposite to the second filter substrate, the first electrode pad and the second auxiliary pad are in contact with each other, and the second electrode pad and the first auxiliary pad are in contact with each other.
BULK ACOUSTIC WAVE FILTER AND MANUFACTURING METHOD THEREOF, COMMUNICATION DEVICE
A bulk acoustic wave filter, a manufacturing method thereof, and a communication device are disclosed. The bulk acoustic wave filter includes a first filter substrate and a second filter substrate; the first filter substrate includes a first base substrate and a first resonator, a first electrode pad and a first auxiliary pad arranged on the first base substrate; the second filter substrate includes a second base substrate and a second resonator, a second electrode pad and a second auxiliary pad arranged on the second base substrate, the first filter substrate is arranged opposite to the second filter substrate, the first electrode pad and the second auxiliary pad are in contact with each other, and the second electrode pad and the first auxiliary pad are in contact with each other.
HYBRID FENCED SUBSTRATE FOR TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR FRONTSIDE MEMBRANE RELEASE
Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a substrate having a front surface and a cavity. A depth of the cavity is defined by a buried oxide layer comprising etch-stop material and a perimeter of the cavity is defined by lateral fences comprising etch-stop material. A back surface of a single-crystal piezoelectric plate is attached to the front surface of the substrate except for a portion of the piezoelectric plate that forms a diaphragm that spans the cavity. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm.
HYBRID FENCED SUBSTRATE FOR TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR FRONTSIDE MEMBRANE RELEASE
Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a substrate having a front surface and a cavity. A depth of the cavity is defined by a buried oxide layer comprising etch-stop material and a perimeter of the cavity is defined by lateral fences comprising etch-stop material. A back surface of a single-crystal piezoelectric plate is attached to the front surface of the substrate except for a portion of the piezoelectric plate that forms a diaphragm that spans the cavity. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm.
SEPARATION METHOD AND APPARATUS FOR MICROVESICLES
A microfluidic control system and method for separating flexible particles such as cell vesicles or biomacromolecules such as exosomes in a sample. The system of the present invention comprises one or more ultrahigh frequency acoustic resonators. The ultrahigh frequency acoustic resonators are capable of generating in a fluid channel an acoustic wave of which the frequency is about 0.5-50 GHz and propagated towards a wall opposite the fluid channel. By adjusting the power of the generated acoustic wave and/or the speed at which a conditioning solution flows through an acoustic wave area, flexible particles in a specified range are pushed to and remain at the top part of the flow channel in the acoustic wave area, while flexible particles outside of the specified range go downstream via the acoustic wave area to be collected, thus capturing or releasing the flexible particles in a solution such as cell vesicles or biomacromolecules, particularly exosomes.
SEPARATION METHOD AND APPARATUS FOR MICROVESICLES
A microfluidic control system and method for separating flexible particles such as cell vesicles or biomacromolecules such as exosomes in a sample. The system of the present invention comprises one or more ultrahigh frequency acoustic resonators. The ultrahigh frequency acoustic resonators are capable of generating in a fluid channel an acoustic wave of which the frequency is about 0.5-50 GHz and propagated towards a wall opposite the fluid channel. By adjusting the power of the generated acoustic wave and/or the speed at which a conditioning solution flows through an acoustic wave area, flexible particles in a specified range are pushed to and remain at the top part of the flow channel in the acoustic wave area, while flexible particles outside of the specified range go downstream via the acoustic wave area to be collected, thus capturing or releasing the flexible particles in a solution such as cell vesicles or biomacromolecules, particularly exosomes.
Fin bulk acoustic resonator technology for UHF and SHF signal processing
A Fin Bulk Acoustic Resonator (FinBAR) includes a fin integrally fabricated on a substrate of a glass or a semiconductor, an inner electrode deposited on the fin, a piezoelectric layer disposed on the inner electrode, an outer electrode deposited on the piezoelectric layer, a first electrode and a second electrode formed on the top surface of the substrate and connected to the inner and outer electrodes respectfully. The fin is characterized with a larger height than its width. A FinBAR array including a number of the FinBARs with different fin widths sequentially located on one chip is capable of continuously filtering frequencies in UHF and SHF bands.
Thin-film bulk acoustic resonator and semiconductor apparatus comprising the same
A thin-film bulk acoustic resonator (FBAR) apparatus includes a lower dielectric layer including a first cavity; an upper dielectric layer including a second cavity, wherein the upper dielectric layer is on the lower dielectric layer; and an acoustic resonance film that is positioned between and separating the first and the second cavities. The acoustic resonance film includes a lower electrode layer, an upper electrode layer, and a piezoelectric film that is sandwiched between the lower and upper electrode layers. A plan view of the first and the second cavities overlap to form an overlapped region having a polygonal shape without parallel sides.
Wafer level surface acoustic wave filter and package method
Embodiments of the present application provide a wafer level surface acoustic wave filter and a package method, the surface acoustic wave filter includes a wafer, an electrode layer, a supporting wall and a cover plate; wherein, the wafer includes a substrate layer and a piezoelectric thin film layer combined together by wafer bonding, the electrode layer is arranged on a surface of the piezoelectric thin film layer, the supporting wall surrounds between the piezoelectric thin film layer and the cover plate to form a sealed cavity; and the cover plate includes at least a first material layer, which uses the same material as the substrate layer.