A filter device includes: a common terminal; a first input/output terminal; a second input/output terminal; a first filter connected to a first path that connects the common terminal and the first input/output terminal, and having a passband that is a first band; a second filter connected to a second path that connects the common terminal and the second input/output terminal, and having a passband that is a second band having a frequency range that is different from and does not overlap a frequency range of the first band; a first switch element connected between a first node on the first path between the first filter and the first input/output terminal and a second node on the second path between the second filter and the second input/output terminal; and a second switch element on the second path, which is connected between the second node and the second input/output terminal.

A filter device includes: a common terminal; a first input/output terminal; a second input/output terminal; a first filter connected to a first path that connects the common terminal and the first input/output terminal, and having a passband that is a first band; a second filter connected to a second path that connects the common terminal and the second input/output terminal, and having a passband that is a second band having a frequency range that is different from and does not overlap a frequency range of the first band; a first switch element connected between a first node on the first path between the first filter and the first input/output terminal and a second node on the second path between the second filter and the second input/output terminal; and a second switch element on the second path, which is connected between the second node and the second input/output terminal.

Aspects of this disclosure relate to an acoustic wave filter configured to filter a radio frequency signal and a loop circuit coupled to the acoustic wave filter. The loop circuit is configured to generate an anti-phase signal to a target signal at a particular frequency. The loop circuit includes a Lamb wave element. Related radio frequency modules and wireless communication devices are disclosed.

Disclosed is a gallium arsenide (GaAs) enabled tunable filter for, e.g., 6 GHz Wi-Fi RF Frontend, with integrated high-performance varactors, metal-insulator-metal (MIM) capacitors, and 3D solenoid inductors. The tunable filter comprises a hyper-abrupt variable capacitor (varactor) high capacitance tuning ratio. The tunable filter also comprises a GaAs substrate in which through-GaAs-vias (TGV) are formed. The varactor along with the MIM capacitors and the 3D inductors is formed in an upper conductive structure on upper surface of the GaAs substrate. Lower conductive structure comprising lower conductors is formed on lower surface of the GaAs substrate. Electrical coupling between the lower and upper conductive structures is provided by the TGVs. The tunable filter can be integrated with radio frequency front end (RFFE) devices.

Disclosed is a gallium arsenide (GaAs) enabled tunable filter for, e.g., 6 GHz Wi-Fi RF Frontend, with integrated high-performance varactors, metal-insulator-metal (MIM) capacitors, and 3D solenoid inductors. The tunable filter comprises a hyper-abrupt variable capacitor (varactor) high capacitance tuning ratio. The tunable filter also comprises a GaAs substrate in which through-GaAs-vias (TGV) are formed. The varactor along with the MIM capacitors and the 3D inductors is formed in an upper conductive structure on upper surface of the GaAs substrate. Lower conductive structure comprising lower conductors is formed on lower surface of the GaAs substrate. Electrical coupling between the lower and upper conductive structures is provided by the TGVs. The tunable filter can be integrated with radio frequency front end (RFFE) devices.

An acoustic wave device includes a substrate, a support portion and a protective member. The substrate has an acoustic wave generator formed on a surface thereof. The support portion is disposed on the surface of the substrate, and includes an accommodating space configured to accommodate the acoustic wave generator. The protective member is coupled to the support portion and disposed to be spaced apart from the acoustic wave generator by a predetermined interval. The protective member is disposed in a seating groove formed in the support portion.

Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.

Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.

Aspects of this disclosure relate to an acoustic wave device that includes a bulk acoustic wave resonator and a Lamb wave element implemented on a common substrate. In some instances, the bulk acoustic wave resonator can be a film bulk acoustic wave resonator. Related radio frequency modules and wireless communication devices are disclosed.

Aspects of this disclosure relate to acoustic wave devices on stacked die. A first die can include first acoustic wave device configured to generate a boundary acoustic wave. A second die can include a second acoustic wave device configured to generate a second boundary acoustic wave, in which the second die is stacked with the first die. The first acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and high acoustic velocity layers on opposing sides of the piezoelectric layer. The high acoustic velocity layers can each have an acoustic velocity that is greater than a velocity of the boundary acoustic wave.