A filter device includes a filter circuit including series-arm resonators and series-arm-resonator connecting wires, and an additional circuit including a resonator including first and second interdigital transducer electrodes, first and second capacitors connected between the first and second interdigital transducer electrodes and the filter circuit, and first and second I-C connecting wires connected to the first and second interdigital transducer electrodes and the first and second capacitors, the additional circuit being connected in parallel with a portion of the series-arm resonators in the filter circuit. The first and second interdigital transducer electrodes are output-side interdigital transducer electrodes. A capacitance of the first capacitor is smaller than the capacitance of the second capacitor. A shortest distance among distances between the first I-C connecting wire and the series-arm-resonator connecting wires is shortest among shortest distances between the I-C connecting wires and the series-arm-resonator connecting wires.

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed.

An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.490 GHz to 5.835 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.

A ladder filter comprises a plurality of series arm bulk acoustic wave resonators electrically connected in series between an input port and an output port of the ladder filter and a plurality of shunt bulk acoustic wave resonators electrically connected in parallel between adjacent ones of the plurality of series arm bulk acoustic wave resonators and ground, at least one of the plurality of shunt bulk acoustic wave resonators including raised frame regions having a first width, at least one of the plurality of series arm bulk acoustic wave resonators having one of raised frame regions having a second width less than the first width or lacking raised frame regions.

A ladder filter comprises a plurality of series arm bulk acoustic wave resonators electrically connected in series between an input port and an output port of the ladder filter and a plurality of shunt bulk acoustic wave resonators electrically connected in parallel between adjacent ones of the plurality of series arm bulk acoustic wave resonators and ground, at least one of the plurality of shunt bulk acoustic wave resonators including raised frame regions having a first width, at least one of the plurality of series arm bulk acoustic wave resonators having one of raised frame regions having a second width less than the first width or lacking raised frame regions.

A high frequency module includes a mounting substrate, an acoustic wave filter, a protection member, a resin layer, and a shield layer. The acoustic wave filter is mounted on a first main surface of the mounting substrate. The protection member is disposed on a main surface of the acoustic wave filter that is far from the mounting substrate. The resin layer is disposed on the first main surface of the mounting substrate and covers an outer peripheral surface of the acoustic wave filter and an outer peripheral surface of the protection member. The shield layer covers the resin layer and the protection member. The protection member is in contact with both the acoustic wave filter and the shield layer. The acoustic wave filter includes a piezoelectric substrate. A main surface of the piezoelectric substrate that is far from the mounting substrate is in contact with the protection member.

Improvement in heat dissipation capability is intended. A radio-frequency module includes a mounting substrate, a first transmission filter, a second transmission filter, a resin layer, and a shield layer. The second transmission filter is higher in power class than the first transmission filter. The resin layer covers at least part of an outer peripheral surface of the first transmission filter and covers at least part of an outer peripheral surface of the second transmission filter. The shield layer overlaps at least part of the second transmission filter in plan view in a thickness direction of the mounting substrate. At least part of a major surface of the second transmission filter on an opposite side to the mounting substrate side is in contact with the shield layer.

A high-frequency circuit includes a power amplifier for a communication band A, and a power amplifier for a communication band B. Transmission in the communication band A, transmission in the communication band B, and reception in the communication band C can be simultaneously used. A frequency range of intermodulation distortion generated between a second harmonic wave of a transmission signal of the communication band A and a fundamental wave of a transmission signal of the communication band B, overlaps with at least part of a reception band of the communication band C. The power amplifier includes amplifying elements and an output trans including coils. One end of the coil is connected with an output of the amplifying element, the other end of the coil is connected with an output of the amplifying element, and one end of the coil is connected with an output terminal of the power amplifier.

An electronic component includes a first main body including a plurality of dielectric layers stacked together, and a second main body mounted to the first main body. The second main body includes a first circuit section and a second circuit section that are each constituted by using at least one acoustic wave element and are electrically separated from each other. The first main body includes first to third ground conductor lavers located between the first and second circuit sections when seen in a Z direction.

An electronic component includes a first main body including a plurality of dielectric layers stacked together, and a second main body mounted to the first main body. The second main body includes a first circuit section and a second circuit section that are each constituted by using at least one acoustic wave element and are electrically separated from each other. The first main body includes first to third ground conductor lavers located between the first and second circuit sections when seen in a Z direction.