Some embodiments include a nonlinear transmission line system comprising: a power supply providing voltages greater than 100 V; a high frequency switch electrically coupled with the power supply; a nonlinear transmission line electrically coupled with the switch; an antenna electrically coupled with the nonlinear transmission line; and an energy recovery circuit comprising a diode and an inductor electrically coupled with the power supply and the antenna.

Some embodiments include a nonlinear transmission line system comprising: a power supply providing voltages greater than 100 V; a high frequency switch electrically coupled with the power supply; a nonlinear transmission line electrically coupled with the switch; an antenna electrically coupled with the nonlinear transmission line; and an energy recovery circuit comprising a diode and an inductor electrically coupled with the power supply and the antenna.

A switch for a radio frequency signal switch assembly including a first node coupled to one of an input and an output of the switch assembly and a second node coupled to a reference voltage, a control node, a common resistor coupled to the control node, a plurality of transistors coupled between the first and second nodes, each transistor of the plurality of transistors having a gate, a drain, and a source, and a plurality of gate resistors coupled between the common resistor and the gates of the plurality of transistors, the plurality of gate resistors having a scaled arrangement of values selected based on a voltage differential across each of the plurality of gate resistors to improve switching speed.

Methods, systems, and circuities for selectively connecting an RF signal to front end circuitry and selectively attenuating the RF signal are disclosed. In one example, an interface circuitry includes switching circuitry and attenuator circuitry. The switching circuitry is connected in series between an output of an amplifier and a front end circuitry configured to transmit a radio frequency (RF) signal output by the amplifier. The switching circuitry connects the output of the amplifier to a selected one or more front end circuitry inputs to create one or more signal paths. The attenuator circuitry is connected between the output of the amplifier and ground to create an attenuation path in a shunt configuration relative to the one or more signal paths. The attenuator circuitry is configured to attenuate the RF signal.

Described are concepts related to the field of programmable interconnect substrates used in packaging electronics, and to stacked integrated circuits produced for application in low power and small form factor designs with fast prototyping and short mass-production cycle times. The concepts facilitate the dynamic reconfiguration of routing resources in the presence of an active system, and the tuning of routing paths to meet power and performance metrics.

Described are concepts related to the field of programmable interconnect substrates used in packaging electronics, and to stacked integrated circuits produced for application in low power and small form factor designs with fast prototyping and short mass-production cycle times. The concepts facilitate the dynamic reconfiguration of routing resources in the presence of an active system, and the tuning of routing paths to meet power and performance metrics.

A radio frequency switch having an N number of switch cells coupled in series is disclosed. Each of the switch cells includes a field-effect transistor (FET), wherein a source of switch cell 1 is coupled to a first port, a drain of switch cell N is coupled to a second port, and a drain of switch cell X is coupled to a source of switch cell X+1 for switch cell 1 through switch cell N. A first diode stack has a first anode coupled to the body of switch cell X and a first cathode coupled to a drain of switch cell X+1 for switch cell 1 through switch cell N−1, and a second diode stack has a second anode coupled to the body of switch cell X and a second cathode coupled to the source of switch cell X−1 for switch cell 2 through switch cell N.

A radio frequency switch having an N number of switch cells coupled in series is disclosed. Each of the switch cells includes a field-effect transistor (FET), wherein a source of switch cell 1 is coupled to a first port, a drain of switch cell N is coupled to a second port, and a drain of switch cell X is coupled to a source of switch cell X+1 for switch cell 1 through switch cell N. A first diode stack has a first anode coupled to the body of switch cell X and a first cathode coupled to a drain of switch cell X+1 for switch cell 1 through switch cell N−1, and a second diode stack has a second anode coupled to the body of switch cell X and a second cathode coupled to the source of switch cell X−1 for switch cell 2 through switch cell N.

A technique relates to a superconducting chip. Resonant units have resonant frequencies, and the resonant units are configured as superconducting resonators. Josephson junctions are in the resonant units, and one or more of the Josephson junctions have a shorted tunnel barrier.

A technique relates to a superconducting chip. Resonant units have resonant frequencies, and the resonant units are configured as superconducting resonators. Josephson junctions are in the resonant units, and one or more of the Josephson junctions have a shorted tunnel barrier.