This disclosure relates to radio frequency (RF) front end circuitry used to route RF signals. In one embodiment, the RF front end circuitry has a filter circuit and a switch device. The switch device includes a common port, an RF port, and switchable path connected in series between the common port and the RF port. The switch device is configured to present approximately the filter capacitance of the filter circuit at the common port when the switchable path is closed. However, when the switchable path is open, the switch device is configured to present a device capacitance at the common port that is approximately equal to the filter capacitance of the filter circuit. In this manner, if the common port is connected to an antenna, the capacitance seen by the antenna from the common port remains substantially unchanged regardless of which of the switchable path is opened or closed.

A sensor device includes: first sensors; second sensors which form capacitances with the first sensors; a sensor transmitter connected to the first sensors, where the sensor transmitter supplies driving signals to the first sensors; and a sensor receiver connected to the second sensors, where the sensor receiver receives sensing signals from the second sensors, and the sensor receiver includes a band pass filter which filters the sensing signals. The band pass filter includes: a first integrator including a first amplifier; a first high pass filter converter connected to a first input terminal, a second input terminal and a first output terminal of the first amplifier, where the first high pass filter converter time-divisionally provides N high pass filter conversion paths; and a first gain auxiliary component connected to the first input terminal and the first output terminal of the first amplifier while the first integrator performs an integral function.

The present disclosure provides a bulk acoustic wave resonance device, a bulk acoustic wave filter device and a radio frequency front end device. The bulk acoustic wave resonance device includes a first layer including a cavity disposed at a first side of the first layer; a first electrode layer disposed in the cavity; a second layer disposed at the first side and disposed on the first electrode layer, and the second layer is a flat layer and covers the first cavity; and a second electrode layer disposed at the first side and disposed on the second layer, and the first electrode layer includes at least two first electrode bars or the second electrode layer includes at least two second electrode bars. The present disclosure can increase the difference between acoustic impedance of a resonance region and a non-resonance region, thereby increasing Q value of the resonance device.