Patent classifications
H03H2210/04
Weakly coupled tunable RF receiver architecture
RF communications circuitry, which includes a first tunable RF filter and a first RF low noise amplifier (LNA) is disclosed. The first tunable RF filter includes a pair of weakly coupled resonators, and receives and filters a first upstream RF signal to provide a first filtered RF signal. The first RF LNA is coupled to the first tunable RF filter, and receives and amplifies an RF input signal to provide an RF output signal.
Low Order Filter Circuit Having Frequency Correction Function, Frequency Correction method for the Low Order Filter Circuit, and High Order Filter Circuit
A low order filter circuit having a frequency correction function, a frequency correction method for a low order filter circuit, and a high order filter circuit are provided. An analog to digital converter (ADC) may detect a peak of a signal processed by a second order filter unit, and after comparison and determination are performed by a digital correction unit, a frequency control signal is outputted as a feedback to a notch filter or a band-pass filter in the second order filter unit where frequency adjustment is performed. The high order filter circuit is integrated by a plurality of the low order filter circuits. Before correcting the high order filter circuit, switch units may restore the high order filter circuit to the low order filter circuits for correction, and then combine the corrected low order filter circuits to form the original high order filter circuit.
Advanced 3D inductor structures with confined magnetic field
Embodiments of an apparatus that includes a substrate and an inductor residing in the substrate are disclosed. In one embodiment, the inductor is formed as a conductive path that extends from a first terminal to a second terminal. The conductive path has a shape corresponding to a two-dimensional (2D) lobe laid over a three-dimensional (3D) volume. Since the shape of the conductive path corresponds to the 2D lobe laid over a 3D volume, the magnetic field generated by the inductor has magnetic field lines that are predominately destructive outside the inductor and magnetic field lines that are predominately constructive inside the inductor. In this manner, the inductor can maintain a high quality (Q) factor while being placed close to other components.
High quality factor interconnect for RF circuits
Embodiments of radio frequency (RF) devices are disclosed having interconnection paths with capacitive structures having improved quality (Q) factors. In one embodiment, an RF device includes an inductor having an inductor terminal and a semiconductor die. The semiconductor die includes one or more active semiconductor devices that include a device contact. The device contact provided by the one or more active semiconductor devices is positioned so as to be vertically aligned directly below the inductor terminal. The inductor terminal and the device contact are electrically connected with an interconnection path that includes a capacitive structure. To prevent or reduce current crowding, the interconnection path is vertically aligned so as to extend directly between the inductor terminal and the device contact. In this manner, the interconnection path electrically connects the inductor terminal and the device contact without degrading the Q factor of the RF device.
ADVANCED 3D INDUCTOR STRUCTURES WITH CONFINED MAGNETIC FIELD
Embodiments of an apparatus that includes a substrate and an inductor residing in the substrate are disclosed. In one embodiment, the inductor is formed as a conductive path that extends from a first terminal to a second terminal. The conductive path has a shape corresponding to a two-dimensional (2D) lobe laid over a three-dimensional (3D) volume. Since the shape of the conductive path corresponds to the 2D lobe laid over a 3D volume, the magnetic field generated by the inductor has magnetic field lines that are predominately destructive outside the inductor and magnetic field lines that are predominately constructive inside the inductor. In this manner, the inductor can maintain a high quality (Q) factor while being placed close to other components.
Tunable RF filter based RF communications system
RF communications circuitry, which includes a first RF filter structure, is disclosed. The first RF filter structure includes a first tunable RF filter path and a second tunable RF filter path. The first tunable RF filter path includes a pair of weakly coupled resonators. Additionally, a first filter parameter of the first tunable RF filter path is tuned based on a first filter control signal. A first filter parameter of the second tunable RF filter path is tuned based on a second filter control signal.
ACOUSTIC-WAVE DEVICE WITH ACTIVE CALIBRATION MECHANISM
An acoustic-wave device with active calibration mechanism is provided. The acoustic-wave device with active calibration mechanism includes at least one adjustable acoustic-wave duplexer, a frequency discriminator and a control circuit. The adjustable acoustic-wave duplexer has a first terminal point, a second terminal point and a third terminal point. The adjustable acoustic-wave duplexer includes a TX filter, an RX filter, a first loop switch and a second loop switch. The first loop switch is used for conducting a first loop. The second loop switch is used for conducting a second loop. The control circuit adjusts the operating frequency of the TX filter according to a first loop calibration signal. The control circuit adjusts the operating frequency of the operating frequency of the RX filter according to the second loop calibration signal.
VSWR detector for a tunable filter structure
Embodiments of radio frequency (RF) filter front-end circuitry are disclosed that include a tunable RF filter structure having weakly coupled resonators and a Voltage Standing Wave Ratio (VSWR) control circuit. The VSWR control circuit is configured to detect a VSWR at a terminal of the tunable RF filter structure and to dynamically tune the tunable RF filter structure based on the VSWR. In this manner, the VSWR control circuit tunes the tunable RF filter structure to improve performance of tunable RF filter structure over variations in the VSWR.
WEAKLY COUPLED TUNABLE RF RECEIVER ARCHITECTURE
RF communications circuitry, which includes a first tunable RF filter and a first RF low noise amplifier (LNA) is disclosed. The first tunable RF filter includes a pair of weakly coupled resonators, and receives and filters a first upstream RF signal to provide a first filtered RF signal. The first RF LNA is coupled to the first tunable RF filter, and receives and amplifies an RF input signal to provide an RF output signal.
Reconfigurable RF filter
A reconfigurable RF filter, which includes a first resonator, a second resonator, and a first coupling circuit, is disclosed. The first coupling circuit is coupled between the first resonator and the second resonator. The reconfigurable RF filter operates in one of a group of operating modes, which include a first operating mode and a second operating mode. During the first operating mode, the reconfigurable RF filter is a bandpass filter having a first bandwidth and a first insertion loss via the first resonator. During the second operating mode, the reconfigurable RF filter is a bandpass filter having a second bandwidth and a second insertion loss via the first resonator, such that the first bandwidth is greater than the second bandwidth and the first insertion loss is less than the second insertion loss.