H03K3/01

Gate drive circuit and gate drive system
10778195 · 2020-09-15 · ·

Provided is a gate drive circuit and a gate drive system, with which current unevenness among power devices connected in parallel can be reduced more. A gate drive circuit includes: an objective waveform generation unit configured to generate an objective waveform; a drive waveform generation unit configured to generate a drive waveform from the objective waveform, by referring to on-timing set information and off-timing set information; a drive control unit configured to drive the power device to turn the power device on/off, based on the drive waveform; a state detection unit configured to detect the state of the power device; a predicted waveform generation unit configured to generate a predicted waveform of a voltage; and an update unit configured to update the on-timing set information and the off-timing set information, based on the result of the state detection and the result of comparison to the predicted waveform.

RF circuit with switch transistor with body connection

In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

RF circuit with switch transistor with body connection

In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

SPDT switch with high linearity
10756708 · 2020-08-25 · ·

A single-pole double-throw switch. In some embodiments, the switch includes a first switching transistor connected between a common terminal of the single-pole double-throw switch and a first switched terminal of the single-pole double-throw switch, a second switching transistor connected between the common terminal of the single-pole double-throw switch and a second switched terminal of the single-pole double-throw switch, a first auxiliary transistor connected between the common terminal of the single-pole double-throw switch and a gate of the first switching transistor, and a second auxiliary transistor connected between the common terminal of the single-pole double-throw switch and a gate of the second switching transistor.

SPDT switch with high linearity
10756708 · 2020-08-25 · ·

A single-pole double-throw switch. In some embodiments, the switch includes a first switching transistor connected between a common terminal of the single-pole double-throw switch and a first switched terminal of the single-pole double-throw switch, a second switching transistor connected between the common terminal of the single-pole double-throw switch and a second switched terminal of the single-pole double-throw switch, a first auxiliary transistor connected between the common terminal of the single-pole double-throw switch and a gate of the first switching transistor, and a second auxiliary transistor connected between the common terminal of the single-pole double-throw switch and a gate of the second switching transistor.

Signal transfer device
10756715 · 2020-08-25 · ·

A pulse generation circuit has: an edge detector detecting a pulse edge in an input signal to generate edge detection signals; a clock generator generating a clock signal according to the edge detection signals; a frequency divider dividing the frequency of the clock signal to generate a frequency-divided clock signal; an input pad for receiving a test mode switch signal from a tester; and an output pad for outputting the frequency-divided clock signal to the tester. The edge detector can generate the edge detection signals by detecting a pulse edge not in the input signal but in the clock signal or in the inverted clock signal obtained by inverting the logic level of the clock signal when the test mode switch signal is being fed in. The signal delay time in the edge detector is adjustable according to the period of the frequency-divided clock signal as measured by the tester.

Signal transfer device
10756715 · 2020-08-25 · ·

A pulse generation circuit has: an edge detector detecting a pulse edge in an input signal to generate edge detection signals; a clock generator generating a clock signal according to the edge detection signals; a frequency divider dividing the frequency of the clock signal to generate a frequency-divided clock signal; an input pad for receiving a test mode switch signal from a tester; and an output pad for outputting the frequency-divided clock signal to the tester. The edge detector can generate the edge detection signals by detecting a pulse edge not in the input signal but in the clock signal or in the inverted clock signal obtained by inverting the logic level of the clock signal when the test mode switch signal is being fed in. The signal delay time in the edge detector is adjustable according to the period of the frequency-divided clock signal as measured by the tester.

WAVEFORM GENERATION CIRCUIT FOR FINELY TUNABLE SENSING FREQUENCY
20200266805 · 2020-08-20 ·

Embodiments disclosed herein generally relate to electronic devices, and more specifically, to a waveform generation circuit for input devices. One or more embodiments provide a new waveform generator for an integrated touch and display driver (TDDI) and methods for generating a waveform for capacitive sensing with a finely tunable sensing frequency. A waveform generator includes accumulator circuitry, truncation circuitry, and saturation circuitry. The accumulator circuitry is configured to accumulate the phase increment value based on a clock signal, and output the accumulated phase increment value. The truncation circuitry configured to drop one or more bits of the accumulated phase increment value to output a truncated value. The saturation circuitry is configured to compare the truncated value to a saturation limit and output a signal corresponding to accessed data samples.

WAVEFORM GENERATION CIRCUIT FOR FINELY TUNABLE SENSING FREQUENCY
20200266805 · 2020-08-20 ·

Embodiments disclosed herein generally relate to electronic devices, and more specifically, to a waveform generation circuit for input devices. One or more embodiments provide a new waveform generator for an integrated touch and display driver (TDDI) and methods for generating a waveform for capacitive sensing with a finely tunable sensing frequency. A waveform generator includes accumulator circuitry, truncation circuitry, and saturation circuitry. The accumulator circuitry is configured to accumulate the phase increment value based on a clock signal, and output the accumulated phase increment value. The truncation circuitry configured to drop one or more bits of the accumulated phase increment value to output a truncated value. The saturation circuitry is configured to compare the truncated value to a saturation limit and output a signal corresponding to accessed data samples.

Current mode digitally variable resistor or programmable VCOM

One or more resistors or resistances are integrated in a 7-bit DVR or PVCOM integrated circuit. A 7-bit DVR or PVCOM integrated circuit includes a 7-bit DAC. The integrated resistors or resistances (R1, R2, or RSET, or any combination) reduces the number of external components, reduces the number of pins, and increases the accuracy of the DVR or PVCOM circuit. The least significant bit (LSB) of the DAC depends only on ratios of internal resistors, which can be made very accurate and independent of temperature.