A drain and a source of an N-channel type FET included in a power feeding control apparatus are provided on an electric current path along which an electric current flows from a DC power supply to a load, the drain being a part of the FET into which the electric current is input and the source being a part of the FET from which the electric current is output. A driving circuit switches the FET off when a first determination circuit determines that a control voltage between a gate and the source of the FET is greater than or equal to a first threshold value, and a second determination circuit determines that a drain-source voltage between the drain and the source of the FET is greater than or equal to a second threshold value.

A semiconductor device includes: a first power semiconductor element; a second power semiconductor element that is connected in parallel with the first power semiconductor element; a voltage changing unit that changes a voltage applied to a control terminal of the first power semiconductor element when the second power semiconductor element is turned on; a detection unit that detects a current flowing in the first power semiconductor element when the voltage changing unit has changed the voltage applied to the control terminal of the first power semiconductor element; and a temperature estimation unit that estimates a temperature of the first power semiconductor element based on a characteristic of the change of the current of the first power semiconductor element with respect to a change of the voltage applied to the first power semiconductor element.

A semiconductor device includes: a first power semiconductor element; a second power semiconductor element that is connected in parallel with the first power semiconductor element; a voltage changing unit that changes a voltage applied to a control terminal of the first power semiconductor element when the second power semiconductor element is turned on; a detection unit that detects a current flowing in the first power semiconductor element when the voltage changing unit has changed the voltage applied to the control terminal of the first power semiconductor element; and a temperature estimation unit that estimates a temperature of the first power semiconductor element based on a characteristic of the change of the current of the first power semiconductor element with respect to a change of the voltage applied to the first power semiconductor element.

It is an object of the present invention to provide a buffer circuit that reduces a reverse voltage applied to transistors being a complementary pair during turn-on and turn-off. A buffer circuit is a buffer circuit that turns on and turns off a switching element and includes a drive-side element that has an end connected to a base of a drive transistor and a sink-side element that has an end connected to a base of a sink transistor. The drive-side element and the sink-side element are respectively a drive-side diode and a sink-side diode, or a drive-side capacitor and a sink-side capacitor.

It is an object of the present invention to provide a buffer circuit that reduces a reverse voltage applied to transistors being a complementary pair during turn-on and turn-off. A buffer circuit is a buffer circuit that turns on and turns off a switching element and includes a drive-side element that has an end connected to a base of a drive transistor and a sink-side element that has an end connected to a base of a sink transistor. The drive-side element and the sink-side element are respectively a drive-side diode and a sink-side diode, or a drive-side capacitor and a sink-side capacitor.

An electronic circuit, including a first switching device that contains a first semiconductor material with a first band gap, and a second switching device that is coupled in parallel to the first switching device, and contains a second semiconductor material with a second band gap smaller than the first band gap. Each of the first and second switching devices has a control electrode, and the control electrode of the first switching device is coupled to the control electrode of the second switching device.

An electronic device includes at least one electronic component, a gradient heat-flux sensor GHFS based on thermoelectric anisotropy and conducting heat generated by the electronic component, and a controller adapted to manage electrical current of the electronic component at least partly on the basis of an electrical control signal generated by the gradient heat-flux sensor and proportional to a heat-flux through the gradient heat-flux sensor. Therefore, the electrical current and thereby also the heat generation of the electronic component are managed directly on the basis of the heat-flux generated by the electronic component. Thus, the electrical current can be managed without a need for voltage and current measurements which may be challenging to be carried out with a sufficient bandwidth especially when the switching frequency of the electronic component is on a range from hundreds of kHz to few MHz.

A DC switching device has at least one switching unit which is arranged between two terminals. Further, the DC switching device has a control unit for controlling the at least one switching unit. The switching unit has a first and a second semiconductor switching element, which are arranged in parallel with one another, the first switching element being a high-voltage switching element and the second switching element being a low-power-loss switching element. The switching unit is controllable by the control unit in such a way that, when the switching unit is switched off, initially the second switching element is switched to be non-conductive, and subsequently the first switching unit is switched to be non-conductive, and when the switching unit is switched on, initially the first switching element is switched to be conductive and subsequently the second switching element is switched to be conductive.

A DC switching device has at least one switching unit which is arranged between two terminals. Further, the DC switching device has a control unit for controlling the at least one switching unit. The switching unit has a first and a second semiconductor switching element, which are arranged in parallel with one another, the first switching element being a high-voltage switching element and the second switching element being a low-power-loss switching element. The switching unit is controllable by the control unit in such a way that, when the switching unit is switched off, initially the second switching element is switched to be non-conductive, and subsequently the first switching unit is switched to be non-conductive, and when the switching unit is switched on, initially the first switching element is switched to be conductive and subsequently the second switching element is switched to be conductive.

Magnetoresistive sensors are used to measure a load current of a switch. In some implementations, additionally a further current sensor may be used. In other implementations, more than one magnetoresistive sensor may be provided.