The present invention relates to an electronic vibrator comprising: a power supply unit for converting AC power into DC power; a bridge circuit unit comprising an IGBT, as a power switching element, in order to enable driving of a large-capacity oscillator; a circuit driving unit for driving the bridge circuit unit, the circuit driving unit applying a sine wave, which is a sine wave PWM modulation reference wave, together with a triangular wave; and a vibration generator connected to the bridge circuit unit so as to generate vibration by means of an electric current provided by the bridge circuit unit, wherein the vibration generator comprises: an E core, which has an E-shape, which is made of a steel plate, and which comprises multiple overlapping layers; an I core, which is positioned at a distance from the E core, which is made of a steel plate, which comprises multiple overlapping layers, and which has an I-shape; a winding unit wound around a portion horizontally protruding from the center of the E core, an AC current being applied to the winding unit; a housing for containing the E core, the I core, and the winding unit; a wing plate protruding from a side wall of the housing and comprising a wing through-hole, which is a bored hole; a bottom plate member, which is positioned at a distance from the housing, and which has a containing groove, thereby containing the I core; a bolt which penetrates the wing through-hole and is coupled to the bottom plate member; and a urethane spring, which is coupled to the housing, which adjusts impacts and buffering, and which is made of urethane. The electronic vibrator has the following advantageous effects: the same pulverizes/scatters powder, which is transferred inside a chute, a hopper, or a transfer piping facility, thereby preventing a sloping discharge opening from being narrowed or clogged by adsorption or flocking of the powder inside the discharge opening; liquidity of a manufacturing facility is improved/maintained such that powder can be efficiently transferred/supplied from the facility to transfer lines; a sloping discharge opening of the facility is prevented from being narrowed or clogged by adsorption or flocking of the powder inside the discharge opening; the electronic vibrator can be applied to an existing facility comparatively easily and installed/used; it is possible to prevent an excessive flow of electric current due to an increased time of application of current to a power element in an ultra-low frequency operation range; prevention of an excessive flow of electric current leads to prevention of a fracture of the power element; and a stable operation can be guaranteed, even in the ultra-l

Provided is an electronic circuit capable of preventing a switching device from breakage when a short-circuit occurs. When a gate control signal CG1 is inverted from an L level to an H level, a first switching circuit 32 selects a first input terminal a, and connects an output terminal d to the first input terminal a, whereby turning on a MOSFET 21. When a predetermined time Tx elapses after the output terminal d of the first switching circuit 32 is connected to the first input terminal a, a second switching circuit 34 selects a first input terminal e, and connects an output terminal g to the first input terminal e. Furthermore, immediately after the connection, the first switching circuit 32 selects a second input terminal b, and connects the output terminal d to the second input terminal b. Consequently, immediately after the MOSFET 21 is turned on, a gate resistor is switched from a first gate resistor 33 having a small resistance value to a second gate resistor 35 having a large resistance value.

Provided is an electronic circuit capable of preventing a switching device from breakage when a short-circuit occurs. When a gate control signal CG1 is inverted from an L level to an H level, a first switching circuit 32 selects a first input terminal a, and connects an output terminal d to the first input terminal a, whereby turning on a MOSFET 21. When a predetermined time Tx elapses after the output terminal d of the first switching circuit 32 is connected to the first input terminal a, a second switching circuit 34 selects a first input terminal e, and connects an output terminal g to the first input terminal e. Furthermore, immediately after the connection, the first switching circuit 32 selects a second input terminal b, and connects the output terminal d to the second input terminal b. Consequently, immediately after the MOSFET 21 is turned on, a gate resistor is switched from a first gate resistor 33 having a small resistance value to a second gate resistor 35 having a large resistance value.

A delay-time correction circuit delays an input signal for generating a pre-drive signal to a drive unit generating a drive signal. A transition-change sensor senses a transition change in one of a turn-on operation and turn-off operation. A correction-signal generator generates a correction signal in response to the transition change sensed by the transition-change sensor and to the input signal. A delay output unit generates an output signal corresponding to the pre-drive signal by delaying the input signal using the correction signal. The delay output unit delays the output signal that instructs the other of a turn-on operation and turn-off operation, from the input signal, in accordance with a length of a period for the transition change in the one of a turn-on operation and turn-off operation that is performed immediately before the other of a turn-on operation and turn-off operation.

A delay-time correction circuit delays an input signal for generating a pre-drive signal to a drive unit generating a drive signal. A transition-change sensor senses a transition change in one of a turn-on operation and turn-off operation. A correction-signal generator generates a correction signal in response to the transition change sensed by the transition-change sensor and to the input signal. A delay output unit generates an output signal corresponding to the pre-drive signal by delaying the input signal using the correction signal. The delay output unit delays the output signal that instructs the other of a turn-on operation and turn-off operation, from the input signal, in accordance with a length of a period for the transition change in the one of a turn-on operation and turn-off operation that is performed immediately before the other of a turn-on operation and turn-off operation.

Provided is a semiconductor device capable of preventing a malfunction of a high-side gate driver circuit that is caused by a negative voltage surge. A diode is connected between a p-type bulk substrate configuring a semiconductor layer, and a first potential (GND potential), and a signal is transmitted from a control circuit that is formed in an n diffusion region configuring a first semiconductor region through a first level down circuit and a first level up circuit to a high-side gate driver circuit that is formed in an n diffusion region configuring a second semiconductor region. As a result, a malfunction of the high-side gate driver circuit that is caused by a negative voltage surge can be prevented.

Even when a large current is intentionally flowed during a high-temperature conduction of a semiconductor element, there is a problem in that an overcurrent state is detected to stop current. In the present invention, an overcurrent detector 4 detects overcurrent when an input voltage Vin reaches a threshold voltage Vth, and outputs an overcurrent detection signal c to a gate driving unit 3. On the other hand, when a temperature detection signal a and a current control signal b are input, a transistor 52 is conducted, and the input voltage Vin of the overcurrent detector 4 becomes zero. In this case, the input voltage Vin of the overcurrent detector 4 does not reach the threshold voltage Vth. Therefore, the output of the drive signal output from the gate driving unit 3 is not stopped. For this reason, a large current can flow in a drain current Ids.

A device can include a first circuit configured to be exposed to a first environment, the first circuit comprising one or more first transfer inductors, and a second circuit isolated from the first circuit and configured to be exposed to a second environment, the second circuit comprising one or more second transfer inductors. The second environment can be a harsh environment. The first circuit and the second circuit can be wirelessly coupled via the one or more first transfer inductors and the one or more second transfer inductors to allow transfer of power and/or signals between the first circuit and the second circuit.

In a semiconductor device in the related art, it has been necessary to match the threshold voltage of a power element with the circuit operation of a gate driver; accordingly, it has been difficult to realize the operation of the gate driver most appropriate for the employed power element. According to one embodiment, when a power element is turned off, the semiconductor device monitors the collector voltage of the power element, and increases the number of NMOS transistors that draw out charges from the gate of the power element in a period until the collector voltage becomes lower than the pre-set determination threshold, rather than in the period after the collector voltage becomes lower than the determination threshold.

In a semiconductor device in the related art, it has been necessary to match the threshold voltage of a power element with the circuit operation of a gate driver; accordingly, it has been difficult to realize the operation of the gate driver most appropriate for the employed power element. According to one embodiment, when a power element is turned off, the semiconductor device monitors the collector voltage of the power element, and increases the number of NMOS transistors that draw out charges from the gate of the power element in a period until the collector voltage becomes lower than the pre-set determination threshold, rather than in the period after the collector voltage becomes lower than the determination threshold.