Current sharing among bidirectional double-base bipolar junction transistors. One example is a method comprising: conducting current through a first bidirectional double-base bipolar junction transistor (first B-TRAN); conducting current through a second B-TRAN the second B-TRAN coupled in parallel with the first B-TRAN; measuring a value indicative of conduction of the first B-TRAN, and measuring a value indicative of conduction of the second B-TRAN; and adjusting a current flow through the first B-TRAN, the adjusting responsive to the value indicative of conduction of the first B-TRAN being different than the value indicative of conduction of the second B-TRAN.

Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of auxiliary FETs coupled in series and a main FET coupled in parallel with an interior FET of the plurality of auxiliary FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.

A superconducting DC switch system is provided. The superconducting DC switch system comprises one or more Josephson junctions (JJs), and a magnetic field generator that is configured to switch from inducing a magnetic field in a plane of the one or more JJs, and providing no magnetic field in the plane of the one or more JJs. A DC input signal applied at an input of the one or more JJs is passed through to an output the one or more JJs in the absence of an induced magnetic field, and the DC input signal is substantially suppressed at the output of the one or more JJs in the presence of the magnetic field.

A method for selecting a power source for a load is provided. The method includes monitoring the primary power source, when the primary power source is providing power to the load, determining if a condition of the primary power source crosses a first threshold, when the condition crosses the first threshold, turning on a first power field effect transistor to couple a back-up power source to the load through a second power field effect transistor, when the primary power source is not providing power to the load, determining if a condition of the primary power source crosses a second threshold, and when the condition crosses the second threshold, switching off the first power field effect transistor to couple the primary power source to the load through a third power field effect transistor.

A doorbell chime bypass circuit includes a first node, a second node, and a bi-directional FET switch in series with the first node and the second current node. The bi-directional FET switch includes a first FET and a second FET in series, and is configured to cease conducting current between the first and second nodes when gate voltages of the first and second FETs are below a cut-off threshold. The bypass circuit further includes a sensing circuit configured to determine a level of current flowing through the bi-directional FET switch, and a switch controller configured to set the gate voltages of the first and second FETs to a level below the cut-off threshold when the sensing circuit senses that the level of current meets a doorbell press current threshold, causing the bi-directional FET switch to cease conducting current between the first and second nodes.

A power module includes: a GaN transistor, an NMOS transistor, a first capacitor, a first diode and a second diode. The NMOS transistor is electrically connected to the GaN transistor. A negative electrode of the first capacitor is electrically connected to an anode of the first diode and a gate of the GaN transistor. A cathode of the second diode is electrically connected to a gate of the NMOS transistor. The power module further includes a power module control terminal electrically connected to an anode of the first capacitor and an anode of the second diode.

The invention relates to a circuit assembly for protecting a unit to be operated from a supply network against overvoltage, comprising an input having a first and a second input connection, which are connected to the supply network, an output having a first and a second output connection, to which the unit to be protected can be connected, and a protection circuit, which is provided between the first and the second input connections in order to limit the voltage present at the first and the second input connections. According to the invention, the protection circuit has a power semiconductor, in particular an IGBT, wherein a series circuit consisting of a diac, i.e., a bidirectional electrode, and a Zener element is connected between the collector and the gate of the power semiconductor, wherein the sum of the Zener voltage and the diac voltage results in a clamping voltage for the power semiconductor, which lies above the voltage of the supply network and defines the protection level.

Disclosed is an electronic circuit. The electronic circuit includes a first transistor device, a second transistor device, and a third transistor device, each having a control node and a load path. The electronic circuit further includes a drive circuit. The load paths of the first and second transistor devices are connected in parallel, the load path of the third transistor device is connected in series with the load paths of the first and second transistor devices, and the first transistor device and the second transistor device are integrated in a common semiconductor body. The drive circuit is configured, based on a control signal, to successively switch on the first transistor device and the second transistor device, so that the second transistor device is switched on when the first transistor device is in an on-state.

An electronic device includes at least one electronic component, a gradient heat-flux sensor GHFS based on thermoelectric anisotropy and conducting heat generated by the electronic component, and a controller adapted to manage electrical current of the electronic component at least partly on the basis of an electrical control signal generated by the gradient heat-flux sensor and proportional to a heat-flux through the gradient heat-flux sensor. Therefore, the electrical current and thereby also the heat generation of the electronic component are managed directly on the basis of the heat-flux generated by the electronic component. Thus, the electrical current can be managed without a need for voltage and current measurements which may be challenging to be carried out with a sufficient bandwidth especially when the switching frequency of the electronic component is on a range from hundreds of kHz to few MHz.

An electronic device includes at least one electronic component, a gradient heat-flux sensor GHFS based on thermoelectric anisotropy and conducting heat generated by the electronic component, and a controller adapted to manage electrical current of the electronic component at least partly on the basis of an electrical control signal generated by the gradient heat-flux sensor and proportional to a heat-flux through the gradient heat-flux sensor. Therefore, the electrical current and thereby also the heat generation of the electronic component are managed directly on the basis of the heat-flux generated by the electronic component. Thus, the electrical current can be managed without a need for voltage and current measurements which may be challenging to be carried out with a sufficient bandwidth especially when the switching frequency of the electronic component is on a range from hundreds of kHz to few MHz.