The semiconductor device configures a cascode-type high voltage element comprising a plurality of low voltage elements connected in series, wherein the number of stages of connected low voltage elements is reduced, and the high voltage element has desired withstand voltage, without limiting the withstand voltage of the gate oxide film of the low voltage elements. The semiconductor device comprises a first semiconductor element and one or more second semiconductor elements connected in series, wherein the first and the second semiconductor elements have a control signal output terminal between a source terminal and a drain terminal or between an emitter terminal and a collector terminal; and a gate terminal of the one or more second semiconductor elements is connected to the control signal output terminal of the first or second semiconductor element connected in series adjacently to the source or emitter side of said one or more second semiconductor elements.

A method of operating a driver circuit includes receiving a data signal at a first input of an amplification circuit; amplifying, using the amplification circuit, the data signal to produce an output signal through an output pin; attenuating, using a feedback network, the output signal to produce a feedback signal; coupling the feedback signal to a second input of the amplification circuit; detecting, using a control circuit, a fault condition; and decoupling, responsive to detecting the fault condition, the feedback signal from the second input of the amplification circuit. In some embodiments, the driver circuit transmits a fault condition signal to an electronic control unit of an automobile.

An apparatus includes an apparatus input to receive a voltage input, an apparatus output to drive an output metal oxide semiconductor field effect transistor (MOSFET) at least partially based upon the voltage input, a current source circuit to provide a current source to the apparatus output when the voltage input rises above a first threshold and before the voltage input rises above a second threshold, a voltage clamp circuit to provide a clamped output voltage to the apparatus output when the voltage input rises above the second threshold, and a current sink circuit to provide a current sink to the apparatus output when the voltage input falls below the second threshold and before the voltage input reaches the first threshold.

The invention relates to a circuit assembly, to a system and to a method for switching a high-voltage battery (201) and to a vehicle having such a circuit assembly and such a system. The circuit assembly comprises a transistor for conducting a current from the battery (201) to a load and comprises a diode (202) for conducting a return current into the battery (201). The circuit assembly is configured to provide a pre-charging current by means of the pulsed switching of the transistor (203).

A method of operating a driver circuit includes receiving a data signal at a first input of an amplification circuit; amplifying, using the amplification circuit, the data signal to produce an output signal through an output pin; attenuating, using a feedback network, the output signal to produce a feedback signal; coupling the feedback signal to a second input of the amplification circuit; detecting, using a control circuit, a fault condition; and decoupling, responsive to detecting the fault condition, the feedback signal from the second input of the amplification circuit. In some embodiments, the driver circuit transmits a fault condition signal to an electronic control unit of an automobile.

Power switching devices include a semiconductor layer structure that has an active region and an inactive region. The active region includes a plurality of unit cells and the inactive region includes a field insulating layer on the semiconductor layer structure and a gate bond pad on the field insulating layer opposite the semiconductor layer structure. A gate insulating pattern is provided on the semiconductor layer structure between the active region and the field insulating layer, and at least one source/drain contact is provided on the semiconductor layer structure between the gate insulating pattern and the field insulating layer.

A semiconductor device includes a first terminal for a battery, a second terminal for an inverter circuit, and a transistor. The semiconductor device is configured to control a voltage applied to a control terminal of the transistor to allow supply of a current from the first terminal to the second terminal and allow supply of a current from the second terminal to the first terminal. A withstand voltage between the first terminal and the second terminal is greater than or equal to a voltage between the battery and the inverter circuit.

Provided is a technique for reducing the size and cost of a semiconductor device. A semiconductor device includes an IGBT module having an IGBT, and a MOSFET module having a MOSFET whose operational property is different from that of the IGBT, the MOSFET module being connected to the IGBT module in parallel. The semiconductor device is capable of selectively executing an operation mode in which switching timing in the IGBT module and switching timing in the MOSFET module are non-identical.

A method for rapidly gathering a sub-threshold swing from a thin film transistor is provided. The method includes: electrically connecting an operational amplifier and an anti-exponential component to a source terminal of the thin film transistor; performing a measuring process to the thin film transistor in which the measuring process is inputting multiple values of a gate voltage to a gate terminal, such that multiple values of an output voltage are correspondingly generated from the output terminal of the operational amplifier; and performing a fitting process to the output voltage corresponding to the thin film transistor in which the fitting process is fitting at least two of said multiple values of the output voltage to get the sub-threshold swing.

A semiconductor device includes a first terminal for a battery, a second terminal for an inverter circuit, and a transistor. The semiconductor device is configured to control a voltage applied to a control terminal of the transistor to allow supply of a current from the first terminal to the second terminal and allow supply of a current from the second terminal to the first terminal. A withstand voltage between the first terminal and the second terminal is greater than or equal to a voltage between the battery and the inverter circuit.