In a power supply device including a plurality of battery modules each including a secondary battery, in which the battery modules are connected in series to one another according to a gate driving signal from a controller and in each of the battery modules, the gate driving signal is delayed in a gate driving signal processing circuit included in the battery module and then transmitted from upstream to downstream of the series connection, an ID is provided for each of the battery modules by transmitting an ID setting signal for providing an ID unique to the battery module using a gate signal line for transmitting the gate driving signal.

An apparatus may include an input pin\ and timing control circuitry coupled to the input pin. The timing control circuitry selectively executes one or more timing control functions based on a set of one or more hardware components coupled to the input pin. The set of one or more hardware components are disposed external to the apparatus. A configuration of the set of one or more hardware components determines which of one or more of the multiple timing control functions are enabled.

A power supply device includes an output circuit configured to be supplied with electric power from a power supply, and to output a current, a driving circuit configured to control an output operation of the output circuit to output a current, an overcurrent detection circuit configured to output a detection signal to a first node when detecting an overcurrent in the output circuit, an off-state fixing circuit configured to output an off-state fixing signal to the driving circuit for performing a forcible suspension of the output operation of the output circuit based on a detection signal inputted to the first node, regardless of whether a control signal is outputted, and a control unit configured to receive the detection signal and to output the control signal for controlling the output operation to the driving circuit in order to cause the driving circuit to control the output operation.

A control device for a power semiconductor switch, has a first, second and third electrical control device terminal, and a control device that according to a control signal generates an actuation voltage on the third control device terminal and actuates the power semiconductor switch. An overcurrent detection circuit determines a first voltage corresponding to a primary power semiconductor switch voltage present between the first and second control device terminals and, if the first voltage, further to commence the generation of an actuation voltage for a switch-on of the power semiconductor switch, and if the voltage exceeds a reference voltage, to generate an overcurrent detection signal. A blocking circuit blocks the output of the overcurrent detection signal from the overcurrent detection circuit, if a control current flowing in the third control device terminal for the actuation of the power semiconductor switch exceeds a first current value and/or is designed to block the output of the overcurrent detection signal from the overcurrent detection circuit, if the actuation voltage is smaller than a first voltage value.

A control device for a power semiconductor switch, has a first, second and third electrical control device terminal, and a control device that according to a control signal generates an actuation voltage on the third control device terminal and actuates the power semiconductor switch. An overcurrent detection circuit determines a first voltage corresponding to a primary power semiconductor switch voltage present between the first and second control device terminals and, if the first voltage, further to commence the generation of an actuation voltage for a switch-on of the power semiconductor switch, and if the voltage exceeds a reference voltage, to generate an overcurrent detection signal. A blocking circuit blocks the output of the overcurrent detection signal from the overcurrent detection circuit, if a control current flowing in the third control device terminal for the actuation of the power semiconductor switch exceeds a first current value and/or is designed to block the output of the overcurrent detection signal from the overcurrent detection circuit, if the actuation voltage is smaller than a first voltage value.

A semiconductor switch control device includes a bidirectional shutoff circuit that transmits or shuts off a current flowing bidirectionally between a high-voltage battery and a high-voltage load, a resistor that detects a voltage of the bidirectional shutoff circuit, a first voltage detector that detects a voltage applied to the resistor, and a controller configured to determine malfunction of the bidirectional shutoff circuit, based on a first detected voltage detected by the first voltage detector. The bidirectional shutoff circuit includes a first FET and a second FET including respective source terminals connected in series, and a third FET and a fourth FET including respective source terminals connected in series. The resistor includes one end connected between the source terminals of the first FET and the second FET, and the other end connected between the source terminals of the third FET and the fourth FET.

A semiconductor switch control device includes a bidirectional shutoff circuit that transmits or shuts off a current flowing bidirectionally between a high-voltage battery and a high-voltage load, a resistor that detects a voltage of the bidirectional shutoff circuit, a first voltage detector that detects a voltage applied to the resistor, and a controller configured to determine malfunction of the bidirectional shutoff circuit, based on a first detected voltage detected by the first voltage detector. The bidirectional shutoff circuit includes a first FET and a second FET including respective source terminals connected in series, and a third FET and a fourth FET including respective source terminals connected in series. The resistor includes one end connected between the source terminals of the first FET and the second FET, and the other end connected between the source terminals of the third FET and the fourth FET.

A power supply device includes an output circuit configured to be supplied with electric power from a power supply, and to output a current, a driving circuit configured to control an output operation of the output circuit to output a current, an overcurrent detection circuit configured to output a detection signal to a first node when detecting an overcurrent in the output circuit, an off-state fixing circuit configured to output an off-state fixing signal to the driving circuit for performing a forcible suspension of the output operation of the output circuit based on a detection signal inputted to the first node, regardless of whether a control signal is outputted, and a control unit configured to receive the detection signal and to output the control signal for controlling the output operation to the driving circuit in order to cause the driving circuit to control the output operation.

A control device for a power semiconductor switch, has a first, second and third electrical control device terminal, and a control device that according to a control signal generates an actuation voltage on the third control device terminal and actuates the power semiconductor switch. An overcurrent detection circuit determines a first voltage corresponding to a primary power semiconductor switch voltage present between the first and second control device terminals and, if the first voltage, further to commence the generation of an actuation voltage for a switch-on of the power semiconductor switch, and if the voltage exceeds a reference voltage, to generate an overcurrent detection signal. A blocking circuit blocks the output of the overcurrent detection signal from the overcurrent detection circuit, if a control current flowing in the third control device terminal for the actuation of the power semiconductor switch exceeds a first current value and/or is designed to block the output of the overcurrent detection signal from the overcurrent detection circuit, if the actuation voltage is smaller than a first voltage value.

A control device for a power semiconductor switch, has a first, second and third electrical control device terminal, and a control device that according to a control signal generates an actuation voltage on the third control device terminal and actuates the power semiconductor switch. An overcurrent detection circuit determines a first voltage corresponding to a primary power semiconductor switch voltage present between the first and second control device terminals and, if the first voltage, further to commence the generation of an actuation voltage for a switch-on of the power semiconductor switch, and if the voltage exceeds a reference voltage, to generate an overcurrent detection signal. A blocking circuit blocks the output of the overcurrent detection signal from the overcurrent detection circuit, if a control current flowing in the third control device terminal for the actuation of the power semiconductor switch exceeds a first current value and/or is designed to block the output of the overcurrent detection signal from the overcurrent detection circuit, if the actuation voltage is smaller than a first voltage value.