Provided is a cascode circuit including first and second transistors connected between a drain terminal and a source terminal in cascode form, a level sifter configured to change a voltage level of a switching control signal applied to a gate terminal and provide the changed switching control signal to a gate of the first transistor, a buffer configured to delay the switching control signal and provide the delayed switching control signal to a gate of the second transistor, and a first resistor connected between the level shifter and the gate of the first transistor.

Provided is a cascode circuit including first and second transistors connected between a drain terminal and a source terminal in cascode form, a level sifter configured to change a voltage level of a switching control signal applied to a gate terminal and provide the changed switching control signal to a gate of the first transistor, a buffer configured to delay the switching control signal and provide the delayed switching control signal to a gate of the second transistor, and a first resistor connected between the level shifter and the gate of the first transistor.

To provide a driving device for semiconductor elements that is capable of suppressing variation in switching time caused by driving capability and temperature. A driving device for semiconductor elements includes: a semiconductor chip in which a voltage control type semiconductor element is formed; a temperature detecting unit configured to detect temperature of the semiconductor chip; a driving-capability adjusting unit configured to adjust driving capability of the voltage control type semiconductor element according to temperature detection values detected by the temperature detecting unit; and a timing adjusting unit configured to adjust switching time of the voltage control type semiconductor element according to the temperature detection values detected by the temperature detecting unit.

To provide a driving device for semiconductor elements that is capable of suppressing variation in switching time caused by driving capability and temperature. A driving device for semiconductor elements includes: a semiconductor chip in which a voltage control type semiconductor element is formed; a temperature detecting unit configured to detect temperature of the semiconductor chip; a driving-capability adjusting unit configured to adjust driving capability of the voltage control type semiconductor element according to temperature detection values detected by the temperature detecting unit; and a timing adjusting unit configured to adjust switching time of the voltage control type semiconductor element according to the temperature detection values detected by the temperature detecting unit.

A pump switching device is provided. The pump switching device includes a relay, a switch, a sensor and a controller. The relay selectively couples current to a pump motor. The switch is coupled in parallel with the relay. The sensor is configured to generate a signal upon the detection of a condition. The controller is in communication with the sensor. The controller is further coupled to control the relay and the switch. The controller is configured to activate the switch a select amount of time before the controller activates the relay upon initial detection of the signal from the sensor. The controller is further configured to deactivate the switch a select amount of time after the relay is activated while the signal is being detected.

A switch control device includes: a retention circuit receiving a control signal and a safety signal, and outputting a retention signal to the driver of the switch to maintain an on state of the switch based on the control signal and the safety signal; a retention control circuit disabling the retention circuit, so that the output of the retention signal is blocked based on a disable signal being received; a first controller outputting the control signal to the driver to control the operation of the switch, and outputting the disable signal to the retention control circuit based on the retention circuit being disabled in a system to which the switch control device is mounted; and a second controller outputting the safety signal according to the operation status of the first controller, wherein the driver controls the opening/closing of the switch based on the control signal or the retention signal.

A switch control device for controlling switches between a battery and load of an electric vehicle, wherein operational states of switches controlled by control signals from a controller are maintained from the start of a fault being detected in the controller and during the fault regardless of any erroneous control signals arising from the detected fault, and retention circuits generate retention signals during the fault to maintain operational states of the switches from before fault detection, wherein the retention circuits are enabled by a signal, output from a retention control circuit, that can be latched if all control signals are high and can be reset by the controller with a reset signal.

A switching control circuit configured to control a switching device. The switching control circuit includes a detection circuit configured to detect whether a current flowing through the switching device is in an overcurrent state, a first signal output circuit configured to output a first signal indicating whether a time period of the overcurrent state is longer than a first time period, and a driving circuit. The driving circuit turns on the switching device based on a first input signal. The driving circuit turns off the switching device through a first switch based on a second input signal when the time period of the overcurrent state is shorter than the first time period, and through a second switch, having a greater on-resistance than the first switch, based on the second input signal and the first signal when the time period of the overcurrent state is longer than the first time period.

A power switch apparatus for a power converter includes a semiconductor power switch and a gate drive unit connected to the semiconductor power switch for supplying gate drive signals to the semiconductor power switch to switch it on and off to cause the power converter to generate an alternating current voltage having a nominal operational frequency based on command signals received from a controller. The gate drive unit receives command signals based on the AC voltage to be generated and to alter the switching events of the semiconductor power switch by addition of a pre-defined jitter-like deviation to the gate drive signals such as to cause the power converter to generate an AC voltage having a modified operational frequency which partly and temporarily deviates from the nominal operational frequency by a pre-defined minimum percentage. A power converter comprising such a power switch apparatus is also disclosed.

A power switch apparatus for a power converter includes a semiconductor power switch and a gate drive unit connected to the semiconductor power switch for supplying gate drive signals to the semiconductor power switch to switch it on and off to cause the power converter to generate an alternating current voltage having a nominal operational frequency based on command signals received from a controller. The gate drive unit receives command signals based on the AC voltage to be generated and to alter the switching events of the semiconductor power switch by addition of a pre-defined jitter-like deviation to the gate drive signals such as to cause the power converter to generate an AC voltage having a modified operational frequency which partly and temporarily deviates from the nominal operational frequency by a pre-defined minimum percentage. A power converter comprising such a power switch apparatus is also disclosed.