To provide a driving device for semiconductor elements that is capable of suppressing variation in switching time caused by driving capability and temperature. A driving device for semiconductor elements includes: a semiconductor chip in which a voltage control type semiconductor element is formed; a temperature detecting unit configured to detect temperature of the semiconductor chip; a driving-capability adjusting unit configured to adjust driving capability of the voltage control type semiconductor element according to temperature detection values detected by the temperature detecting unit; and a timing adjusting unit configured to adjust switching time of the voltage control type semiconductor element according to the temperature detection values detected by the temperature detecting unit.

To provide a driving device for semiconductor elements that is capable of suppressing variation in switching time caused by driving capability and temperature. A driving device for semiconductor elements includes: a semiconductor chip in which a voltage control type semiconductor element is formed; a temperature detecting unit configured to detect temperature of the semiconductor chip; a driving-capability adjusting unit configured to adjust driving capability of the voltage control type semiconductor element according to temperature detection values detected by the temperature detecting unit; and a timing adjusting unit configured to adjust switching time of the voltage control type semiconductor element according to the temperature detection values detected by the temperature detecting unit.

A current break circuit includes a current break control circuit suitable for sequentially outputting a first enable signal and a second enable signal with a time difference in response to at least one control signal, and a current break switch circuit suitable for outputting or blocking a second voltage in response to a first voltage, wherein the current break switch circuit forms a first current path in response to the first enable signal and a second current path in response to the second enable signal when blocking the second voltage.

A current break circuit includes a current break control circuit suitable for sequentially outputting a first enable signal and a second enable signal with a time difference in response to at least one control signal, and a current break switch circuit suitable for outputting or blocking a second voltage in response to a first voltage, wherein the current break switch circuit forms a first current path in response to the first enable signal and a second current path in response to the second enable signal when blocking the second voltage.

Driving circuitry is described that includes multiple programmable bias voltages useful for biasing radio-frequency components such as PIN diodes and gallium-nitride devices. Programmable voltages as high as 30 volts and as low as 20 volts are generated. The drive circuitry can operate from a single, low-voltage power source.

Provided is a cascode circuit including first and second transistors connected between a drain terminal and a source terminal in cascode form, a level sifter configured to change a voltage level of a switching control signal applied to a gate terminal and provide the changed switching control signal to a gate of the first transistor, a buffer configured to delay the switching control signal and provide the delayed switching control signal to a gate of the second transistor, and a first resistor connected between the level shifter and the gate of the first transistor.

The overcurrent protection device includes: a current detection unit configured to detect, as a sense voltage, a sense current flowing through a current sense terminal of a voltage-controlled semiconductor device; an overcurrent detection unit configured to compare the sense voltage detected by the current detection unit with an overcurrent threshold value to output an overcurrent detection signal; a mode determination unit configured to determine whether a superposition mode in which a transient sense voltage is superimposed on the sense voltage or a normal mode in which the transient sense voltage is not superimposed on the sense voltage; and a timing adjustment unit configured to adjust a detection start timing of the overcurrent detection signal based on a result of determination by the mode determination unit.

Radio-frequency signals may be switched between signal lines or signal ports in RF circuits using PIN diodes and PIN-diode driving circuitry. To achieve switching, the PIN diodes are biased at voltages as high as 20 volts or more. Circuitry for biasing PIN diodes is described that uses a low-voltage power source and a single-bit control line.

Radio-frequency signals may be switched between signal lines or signal ports in RF circuits using PIN diodes and PIN-diode driving circuitry. To achieve switching, the PIN diodes are biased at voltages as high as 20 volts or more. Circuitry for biasing PIN diodes is described that uses a low-voltage power source and a single-bit control line.

A timing adjustment method for a drive circuit, including: a rise detector for a rise start when a voltage-driven semiconductor element is turned off; a timing signal output unit outputting a speed change timing signal after a set delay time has elapsed from the rise start; and a conduction controller for a conduction control terminal of the semiconductor element using the timing signal, comprises: defining an estimated terminal voltage of the conduction control terminal when a rise completion time elapses; increasing a delay time by a predetermined unit time, and changing the drive signal to a turning off level again, when the conduction control terminal doesn't fall below the estimated terminal voltage after the drive signal is changed to a turning off level before the level is inverted; and determining a delay time, when the conduction control terminal falls below the estimated terminal voltage initially, as a set value.