A driving module for a display device includes a first transistor, comprising a gate coupled to a first node, a drain coupled to an output end, and a source coupled to a first positive voltage source; a second transistor, comprising a gate coupled to a second node, a drain coupled to output end, and a source coupled to a first negative voltage source; and a voltage generating unit, coupled to an input end, a second positive voltage source and a second negative voltage source for generating a first voltage at first node and a second voltage at second node according to a control signal from input end; wherein voltage difference between a first positive voltage of first positive voltage source and first voltage is smaller than first threshold and voltage difference between a first negative voltage of first negative voltage source and second voltage is smaller than second threshold.

The present invention provides a semiconductor device in which a field effect transistor is prevented from burning caused by an electric current flowing through a parasitic diode. This semiconductor device has a configuration including: a field effect transistor including a parasitic diode; a temperature detector that detects a temperature of the parasitic diode; and a controller that determines whether the temperature detected by the temperature detector is higher than or equal to a first temperature, and turns on the field effect transistor if the detected temperature is higher than or equal to the first temperature.

A memory is provided with a plurality of cores that power up according to a power-up order from a first core to a final core. As the core power supply voltage for a current core powers up according to the power-up order, it triggers the power-up of a succeeding core in the power-up order responsive to the core power supply voltage exceeding the threshold voltage of a control transistor in the succeeding core.

A memory is provided with a plurality of cores that power up according to a power-up order from a first core to a final core. As the core power supply voltage for a current core powers up according to the power-up order, it triggers the power-up of a succeeding core in the power-up order responsive to the core power supply voltage exceeding the threshold voltage of a control transistor in the succeeding core.

A drive circuit drives driven switches connected in parallel with one another. The driven switches each include first, second main, and main control terminals. When a potential difference of the main control terminal with respect to the second main terminal becomes greater than or equal to a threshold voltage, the flow of current between the first and second main terminals is permitted. At least two driven switches have different threshold voltages. The drive circuit includes, for each driven switch, an electrical path electrically connecting the second main terminal or a negative voltage supply, which is at a negative voltage lower than the potential of the second main terminal, to the main control terminal. The impedance of each of the electrical paths is set so the potential difference increased by electric charge flowing into the electrical path through a parasitic capacitance of the driven switch becomes less than the threshold voltage.

A drive circuit drives driven switches connected in parallel with one another. The driven switches each include first, second main, and main control terminals. When a potential difference of the main control terminal with respect to the second main terminal becomes greater than or equal to a threshold voltage, the flow of current between the first and second main terminals is permitted. At least two driven switches have different threshold voltages. The drive circuit includes, for each driven switch, an electrical path electrically connecting the second main terminal or a negative voltage supply, which is at a negative voltage lower than the potential of the second main terminal, to the main control terminal. The impedance of each of the electrical paths is set so the potential difference increased by electric charge flowing into the electrical path through a parasitic capacitance of the driven switch becomes less than the threshold voltage.

In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. in some embodiments, an RE circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. in some embodiments, an RE circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

A digital input circuit adopts a first state when an input signal is below a lower threshold value and adopts a second state when the input signal is above an upper threshold value. The digital input circuit comprises first and second subcircuits that exhibit a non-ideal current output behavior at least in the second state, and each comprises a current stabilizing element with a driving circuit and a voltage stabilizing element. The first and second subcircuits are configured such that, at least in a portion of the second state, an electric current flowing through the first subcircuit's voltage stabilizing element consists substantially of a stabilized current of the second subcircuit, and an electric current that flows through the second subcircuit's voltage stabilizing element consists substantially of a stabilized current of the first subcircuit, such that the non-ideal current output behavior of the first and second subcircuits compensate for each other.

A digital input circuit adopts a first state when an input signal is below a lower threshold value and adopts a second state when the input signal is above an upper threshold value. The digital input circuit comprises first and second subcircuits that exhibit a non-ideal current output behavior at least in the second state, and each comprises a current stabilizing element with a driving circuit and a voltage stabilizing element. The first and second subcircuits are configured such that, at least in a portion of the second state, an electric current flowing through the first subcircuit's voltage stabilizing element consists substantially of a stabilized current of the second subcircuit, and an electric current that flows through the second subcircuit's voltage stabilizing element consists substantially of a stabilized current of the first subcircuit, such that the non-ideal current output behavior of the first and second subcircuits compensate for each other.