A programmable solid-state relay includes a base module; a configuration module; a control voltage module having an energy storage device; a controller module having at least two microcontrollers, each having an internal EEPROM memory and at least one digital timer; and at least one switch module including at least one switching circuit having first and second switching contacts. The control voltage module is adapted to receive an applied control voltage and to permit pre-selection of an activation voltage level and a de-activation voltage level.

An electronic device includes a connector for connection to an external device; a controller electrically connected to a first external device detection terminal of the connector to detect an electric state of the first external device detection terminal and to output a signal corresponding to the detected electric state; a processor having a first input terminal electrically connected to the controller, that is configured to receive the signal through the first input terminal, having a second input terminal electrically connected to a second external device detection terminal of the connector, and that is configured to detect an electric state of the second external device detection terminal; and an electronic component disposed between the second external device detection terminal and the processor such that an overvoltage is not entered into the processor through the second input terminal. Various example embodiments are available.

A power supply system for USB Power Delivery includes a current source drive circuit to control a power FET to regulate the supply of power along a power path. The current source drive circuit includes a cascode current source and a cascode protection circuit formed by a source follower and a feedback voltage divider. The source follower can be a transistor with its gate connected to a cascode node between upper- and lower-stage transistors of the cascode current source. The divider node of the voltage divider is connected to the gate of the lower-stage transistor. The current source drive circuit can operate within the gate-source voltage specifications of 30-volt DEPMOS devices, and can provide high output impedance to the gate of power FET and a current limit circuit during current limiting operation, without requiring an extra high-voltage mask during fabrication.

An n-type transistor and a p-type transistor are connected in series such that, when the two transistors are turned on, current flows from the collector of the n-type transistor to the collector of the p-type transistor. A positive-feedback capacitor is connected between the collector of one transistor and the base of the other transistor. The two transistors turn on together when the base voltage of the n-type transistor exceeds the base voltage of the p-type transistor by at least the sum of the turn-on threshold voltages of the two transistors and (i) the two transistors turn off together when the base voltage of the n-type transistor fails to exceed the base voltage of the p-type transistor by at least that sum. The positive-feedback capacitor ensures that the two transistors turn fully on and off together. In certain embodiments, the circuitry can be controlled to operate as a current pulse generator.

An n-type transistor and a p-type transistor are connected in series such that, when the two transistors are turned on, current flows from the collector of the n-type transistor to the collector of the p-type transistor. A positive-feedback capacitor is connected between the collector of one transistor and the base of the other transistor. The two transistors turn on together when the base voltage of the n-type transistor exceeds the base voltage of the p-type transistor by at least the sum of the turn-on threshold voltages of the two transistors and (i) the two transistors turn off together when the base voltage of the n-type transistor fails to exceed the base voltage of the p-type transistor by at least that sum. The positive-feedback capacitor ensures that the two transistors turn fully on and off together. In certain embodiments, the circuitry can be controlled to operate as a current pulse generator.

One example discloses a voltage select circuit, comprising: a first input configured to receive a first input voltage; a second input configured to receive a second input voltage; a first diode having a first polarity coupled to the first input; a second diode having a first polarity coupled to the second input; an output coupled to a second polarity of both the first and second diodes; a diode bypass circuit coupled to the first input and the output in parallel with the first diode, and coupled to the second input; and wherein the bypass circuit is configured to pass the first input voltage to the output if an absolute value of the second input voltage is less than a voltage drop of the second diode.

One example discloses a voltage select circuit, comprising: a first input configured to receive a first input voltage; a second input configured to receive a second input voltage; a first diode having a first polarity coupled to the first input; a second diode having a first polarity coupled to the second input; an output coupled to a second polarity of both the first and second diodes; a diode bypass circuit coupled to the first input and the output in parallel with the first diode, and coupled to the second input; and wherein the bypass circuit is configured to pass the first input voltage to the output if an absolute value of the second input voltage is less than a voltage drop of the second diode.

In a driving device for driving a plurality of semiconductor switches connected in parallel to each other, a charge side conduction element is disposed in a charge side loop path including a conduction control terminal and a low-potential side conduction terminal of one of the semiconductor switches, and enables a charging current to flow in a conductive state. A discharge side conduction element is disposed in a discharge side loop path including the conduction control terminal and the low-potential side conduction terminal, and enables a discharging current to flow in a conductive state. A voltage detection unit is connected to a current output terminal of at least one of the charge side conduction element and the discharge side conduction element. A resistive element is connected in parallel to at least one of the charge side conduction element and the discharge side conduction element.

In a driving device for driving a plurality of semiconductor switches connected in parallel to each other, a charge side conduction element is disposed in a charge side loop path including a conduction control terminal and a low-potential side conduction terminal of one of the semiconductor switches, and enables a charging current to flow in a conductive state. A discharge side conduction element is disposed in a discharge side loop path including the conduction control terminal and the low-potential side conduction terminal, and enables a discharging current to flow in a conductive state. A voltage detection unit is connected to a current output terminal of at least one of the charge side conduction element and the discharge side conduction element. A resistive element is connected in parallel to at least one of the charge side conduction element and the discharge side conduction element.

A gate drive circuit device includes positive and negative pulse circuit portions each including a pulse diode and a pulse assembly connected in parallel with each other. The pulse assemblies each include another pulse diode and a resistor-capacitor assembly connected in series. The resistor-capacitor assembly includes a pulse resistor and a pulse capacitor connected in parallel. Each pulse circuit portion is connected with a different switch. Each pulse circuit portion is a passive device that is configured to activate a different switch responsive to receiving one or more voltage pulses from a power supply.