An electrical system may include a mounting surface, a component configured for connection with the mounting surface and configured to move relative to the mounting surface, and/or an orientation sensor configured to determining an orientation of the component relative to the mounting surface. The orientation sensor may include a first sensor (e.g., a magnetometer, an accelerometer, a gyroscope, etc.) connected, at least indirectly, to the mounting surface, and a second sensor (e.g., a magnetometer, an accelerometer, a gyroscope, etc.) connected to move with the component. The orientation sensor may include an electronic controller. The electronic controller may be configured to compare first information from the first sensor to second information from the second sensor to determine the orientation of the component relative to the mounting surface.

An alternator and a rectifier thereof are provided. The rectifier includes a transistor and a gate voltage control circuit. The transistor is controlled by a gate voltage. The gate voltage control circuit generates the gate voltage according to a voltage difference between an input voltage and a rectified voltage. During a first time interval after the voltage difference drops to a first preset threshold voltage, the gate voltage control circuit determines whether the voltage difference is less than a second preset threshold voltage, and decides whether to provide the gate voltage to turn on the transistor. When the transistor is turned on, the voltage difference substantially equals to a first reference voltage. And during a second time interval, the gate voltage control circuit regulates the gate voltage to set the voltage difference substantially to a second reference voltage.

An alternator and a rectifier thereof are provided. The rectifier includes a transistor and a gate voltage control circuit. A control end of the transistor receives a gate voltage. The gate voltage control circuit generates the gate voltage according to a voltage difference between an input voltage and a rectified voltage. The gate voltage control circuit detects a first time point when the voltage difference is less than a first preset threshold voltage, provides the gate voltage during a first time interval after the first time point to turn on the transistor, and sets the voltage difference to a first reference voltage. The gate voltage control circuit regulates the gate voltage to set the voltage difference to a second reference voltage during a second time interval after the first time interval. The first time interval is independent of a cycle of the input voltage.

A fast-switching power management circuit is provided. The fast-switching power management circuit is configured to generate an output voltage(s) based on an output voltage target that may change on a per-frame or per-symbol basis. In embodiments disclosed herein, the fast-switching power management circuit can be configured to adapt (increase or decrease) the output voltage(s) within a very short switching interval (e.g., less than one microsecond). As a result, when the fast-switching power management circuit is employed in a wireless communication apparatus to supply the output voltage(s) to a power amplifier circuit(s), the fast-switching power management circuit can quickly adapt the output voltage(s) to help improve operating efficiency and linearity of the power amplifier circuit(s).

In a general aspect, a circuit can include a pass device configured to receive an input voltage and provide an output voltage. The circuit can further include a current sink coupled with a control terminal of the pass device, the current sink being configured to discharge the control terminal of the pass device to limit the output voltage in response to the input voltage exceeding a threshold voltage. The circuit can also include a switch coupled in series with the current sink, the switch being configured to enable the current sink in response to the input voltage exceeding the threshold voltage.

A method for operating a normally off or normally on power semiconductor element. A threshold voltage change in a threshold voltage of the power semiconductor element in relation to a reference threshold voltage is determined. A switch-on gate voltage is applied between a gate terminal and a source terminal of the power semiconductor element for the purpose of switching on the power semiconductor element is changed by the threshold voltage change in relation to a reference switch-on gate voltage corresponding to the reference threshold voltage.

A charge pump cell for a charge pump is disclosed that may exhibit improved latch-up immunity. A circuit may be arranged at the charge pump cell to apply a voltage to a bulk contact of a charge transfer transistor of such a charge pump cell at least partially responsive to a relationship between a voltage at a first terminal of the charge transfer transistor and a voltage at a second terminal of the charge transfer transistor. A charge pump including one or more such charge pump cells may include a control loop that is configured to control a pumping signal at least partially responsive to a state of an output voltage of the charge pump.

A driver circuit for controlling a P-channel MOSFET includes a first voltage divider connected to a source terminal of the P-channel MOSFET, a first sub-transistor including a first collector terminal, a first emitter terminal and a first base terminal, the first collector terminal is connected to the first voltage divider, a second sub-transistor including a second collector terminal, a second emitter terminal and a second base terminal, the second emitter terminal is connected to a gate terminal of the P-channel MOSFET, and the second base terminal is connected to a first connection node, a third sub-transistor including a third collector terminal, a third emitter terminal and a third base terminal, the third emitter terminal is connected to the second emitter terminal, and the third collector terminal is connected to a ground, and a first resistor connected between the second collector terminal and the second emitter terminal.

According to one aspect of embodiments, a drive circuit of a normally-ON transistor includes: a normally-OFF transistor that includes a main current path connected in serial to a main current path of the normally-ON transistor; and a buffer circuit that supplies, to a gate of the normally-ON transistor, a control signal for controlling turning ON and OFF of the normally-ON transistor, whose high-voltage side and low-voltage side are biased by a bias voltage supplied from a power source unit.

An arithmetic logic unit according to an embodiment of the present technology includes: a plurality of input lines; and a multiply-accumulate operation device. Electrical signals are input to the plurality of input lines. The multiply-accumulate operation device includes a pair of output lines, a plurality of multiplication units including a weight unit that generates, on the basis of the electrical signals input to the plurality of input lines, charges corresponding to multiplication values obtained by multiplying signal values represented by the electrical signals by weight values, a holding unit that holds a binary state, and a switch unit that outputs, on the basis of the held binary state, the charges generated by the weight unit to one of the pair of output lines, an accumulation unit that accumulates the charges output to the pair of output lines by the plurality of multiplication units, and an output unit that outputs, on the basis of the accumulated charges, a multiply-accumulate signal representing a sum of the multiplication values.