An information processing device includes: a memory; and a processor configured to: hold each of values of state variables included in an evaluation function representing energy; calculate the change value of the energy for each of state transitions, when a state transition occurs due to a change of any of the values of the state variables; control a temperature value representing temperature; select any of the state transitions, based on priority information set based on state transition information updated last time with respect to identification information for identifying each state transition, and transition acceptance information indicating transition acceptance determined based on the change value, and a generated thermal noise; and output a lowest energy state which is the values of the state variables when the energy to be updated based on the selected state transition becomes a lowest value.

A transistor (100), including a planar semiconducting substrate (36), a source (42) formed on the substrate, a first drain (102) formed on the substrate, and a second drain (104) formed on the substrate in a location physically separated from the first drain. At least one gate (38, 40) is formed on the substrate and is configured to selectably apply an electrical potential to the substrate in either a first spatial pattern, which causes a first conductive path (62) to be established within the substrate from the source to the first drain, or a second spatial pattern, which causes a second conductive path to be established within the substrate from the source to the second drain.

A sensor includes an output circuit configured to generate a sensor output signal based on an input signal having a logic high or low level, as may be provided by a Schmitt trigger circuit. During normal operation, the output switches between a first percentage of the supply voltage for logic high and a second percentage of the supply voltage for logic low. To convey a failure at the output, an output signal is output as either ground or the supply voltage when a fault is detected. As such, a fault can be communicated any time the output voltage is not equal to the first percentage or the second percentage of the supply voltage.

A transistor (100), including a planar semiconducting substrate (36), a source (42) formed on the substrate, a first drain (102) formed on the substrate, and a second drain (104) formed on the substrate in a location physically separated from the first drain. At least one gate (38, 40) is formed on the substrate and is configured to selectably apply an electrical potential to the substrate in either a first spatial pattern, which causes a first conductive path (62) to be established within the substrate from the source to the first drain, or a second spatial pattern, which causes a second conductive path to be established within the substrate from the source to the second drain.

Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to switch the state of a corresponding one of N cell elements of the MBC. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.

The information processing apparatus is provided with a plurality of spin units for storing spin states and searching for a predetermined state by updating a spin state of a spin unit based on spin states of other spin units. The information processing apparatus includes: a first semiconductor integrated circuit device in which a plurality of first spin units are formed; a second semiconductor integrated circuit device in which a second spin unit is formed; an inter-chip wire connecting the first semiconductor integrated circuit device and the second semiconductor integrated circuit device; and a transmitter connection unit connected to the inter-chip wire and simultaneously shared by the plurality of first spin units. The transmitter connection unit transmits a spin state of a spin unit of which the spin state is changed among the plurality of first spin units, to the second semiconductor integrated circuit device through the inter-chip wire.

Methods and apparatus relating to an adaptive multibit bus for energy optimization are described. In an embodiment, a 1-bit interconnect of a processor is caused to select between a plurality of operational modes. The plurality of operational modes comprises a first mode and a second mode. The first mode causes transmission of a single bit over the 1-bit interconnect at a first frequency and the second mode causes transmission of a plurality of bits over the 1-bit interconnect at a second frequency based at least in part on a determination that an operating voltage of the 1-bit interconnect is at a high voltage level and that the second frequency is lower than the first frequency. Other embodiments are also disclosed and claimed.

A coupled ring oscillator circuit includes a first ring oscillator, a second ring oscillator and a coupling circuit. The first ring oscillator includes a series of delay stages, each delay stage including an inverter gate. The second ring oscillator includes a series of delay stages, each delay stage including an inverter gate. The coupling circuit includes a coupling cell having a first modified tri-state inverter connected in parallel with one of the inverter gates of the first ring oscillator, and a second modified tri-state inverter connected in parallel with one of the inverter gates of the second ring oscillator.

An apparatus is provided which comprises: a first flip-flop (FF) cell with a data path multiplexed with a scan-data path, wherein the scan-data path is independent of a min-delay buffer, wherein the first FF cell has a memory element formed of at least two inverting cells, wherein the two inverting cells are coupled together via a common node; and a second FF cell with a data path multiplexed with a scan-data path, wherein the scan-data path of the second FF cell is independent of a min-delay buffer, and wherein the scan-data path of the second FF cell is coupled to the common node of the first FF cell.

A pulse-width modulation (PWM) controller including an output pin, a temporary voltage generation circuit and a tri-state voltage generation circuit is disclosed. The temporary voltage generation circuit includes a voltage-dividing unit and a control unit. The voltage-dividing unit is coupled to the output pin and the control unit respectively. The control unit receives an enable signal and a PWM signal. The tri-state voltage generation circuit is coupled to the temporary voltage generation circuit and the output pin and receives the enable signal, the PWM signal and a tri-state input voltage. When the PWM controller is operated in a tri-state mode, the control unit controls the voltage-dividing unit to provide a temporary voltage to the output pin according to the enable signal and PWM signal, and then the tri-state voltage generation circuit provides a tri-state voltage to the output pin according to the enable signal and PWM signal.