A data input buffer includes a plurality of buffer units configured to receive a first impedance calibration code and a second impedance calibration code, wherein each of the plurality of buffer units outputs an offset detected with a first input terminal and a second input terminal thereof short-circuited, as write data, and wherein a buffer unit corresponding to a current value of the first impedance calibration code among the plurality of buffer units is configured to correct the offset according to the second impedance calibration code.

A resistor array made of a semiconductor includes a plurality of resistor groups and a common line that electrically connects the M-th resistors of the plurality of resistor groups. Each resistor group includes first to M-th resistors connected in series, M being an integer of 2 or greater, and at least one short-circuit line, each short-circuiting at least one, but not all, of the M resistors.

A nonvolatile memory device includes a first memory structure. The first memory structure includes first through N-th memory dies that may be connected to an external memory controller via a first channel. N is a natural number equal to or greater than two. At least one of the first through N-th memory dies is configured to be used as a first representative die that performs an on-die termination (ODT) operation while a data write operation is performed for one of the first through N-th memory dies.

Some embodiments include apparatus and methods using a package substrate and a die coupled to the package substrate. The package substrate includes conductive contacts, conductive paths coupled to the conductive contacts, and a resistor embedded in the package substrate. The die includes buffer circuits and a calibration module coupled to the buffer circuits and the resistor. The buffer circuits include output nodes coupled to the conductive contacts through the conductive paths. The calibration module is configured to perform a calibration operation to adjust resistances of the buffer circuits based on a value of a voltage at a terminal of the resistor during the calibration operation.

Apparatuses and methods associated with voltage tolerant termination presence detection for universal serial bus type-C connectors are disclosed herein. In embodiments, an apparatus to enable voltage tolerant termination presence detection may include sensor circuitry to determine whether a device coupled to the sensor circuitry is to operate in host mode or device mode based on a signal on a configuration channel between the device and the sensor circuitry. In embodiments, the apparatus may further include termination circuitry to bias the configuration channel in accordance with the host mode or the device mode based on the determination of whether the device is to operate in the host mode or the device mode. Other embodiments may be described and/or claimed.

A semiconductor device of an embodiment includes a buffer configured to perform data transmission by turning on and off a first output transistor group and a second output transistor group; a first correction circuit configured to calibrate a resistance value of the buffer by controlling an on-off state of each of first transistors of the first output transistor group; a second correction circuit configured to calibrate the resistance value of the buffer by controlling an on-off state of each of second transistors of the second output transistor group; and a control circuit configured to cause the calibration by the first correction circuit to be performed in a non-communication duration other than a duration of data transmission from the buffer and cause the calibration by the second correction circuit to be performed in a duration other than a duration of the calibration by the first correction circuit.

An active termination circuit comprising an input node connected to a transmission line, a first transistor, and a second transistor. The transmission line supplies a signal to the input node. The first transistor is diode connected between a high voltage supply and the input node. The first transistor terminates the signal when the signal is at a low logic level. The second transistor is diode connected between the input node and a low voltage supply. The second transistor terminates the signal when the signal is at a high logic level.

An example driver circuit includes a termination voltage circuit and a termination element coupled to the termination voltage circuit. The driver circuit also includes a current source switch coupled the termination element via a node. The driver circuit further includes a current source coupled to the current source switch. The current source switch and the termination voltage circuit are controlled via a control signal. The termination voltage circuit is to generate a termination voltage to match a node voltage of the node based on the control signal. The driver circuit further includes a load coupled to the termination element and the current source switch via the node. The driver circuit further includes a load voltage source coupled to the load. The node voltage is generated based on the load and the load voltage source.

A memory module includes a command/address (CA) register, memory devices, and a module resistor unit mounted on a circuit board. The centrally disposed CA register drive the memory devices one or more internal CA signal(s) to arrangements of memory devices using multiple CA transmission lines, wherein the multiple internal CA transmission lines are commonly terminated in the module resistor unit.

A memory system includes a memory controller and a memory module, where the memory controller is arranged for generating at least a first clock signal and an inverted first clock signal, and the memory module is arranged to receive at least the first clock signal and the inverted first clock signal from the memory controller. In addition, the memory module includes a termination module, and the first clock signal is coupled to the inverted first clock signal through the termination module.