A logic cell including a fixed assembly including a first electrode, a mobile assembly including a second electrode, and third, fourth, and fifth electrodes, wherein: the first, second, third, fourth, and fifth electrodes are insulated from one another; the first and second electrodes define a capacitor variable according to the position of the mobile assembly relative to the fixed assembly; the third electrode is connected to a node of application of a first logic input signal; the fourth electrode is connected to a node of application of a second logic input signal; the fifth electrode is connected to a reference node; and the position of the second electrode relative to the first electrode is a function of a combination of the first and second logic input signals.

A nonvolatile memory device includes a memory cell array, a row decoder circuit, a page buffer circuit, and a control logic circuit. The control logic circuit controls the row decoder circuit and the page buffer circuit to perform: (1) a pre-program of sequentially selecting a plurality of memory blocks and increasing threshold voltages of string selection transistors or ground selection transistors of the selected memory block and (2) after the pre-program is completed, a main program of sequentially selecting the plurality of memory blocks, programming string selection transistors or ground selection transistors of the selected memory block, and performing a verification by using a verification voltage.

A quantum circuit generation method includes determining a reference state of a target molecule and N excitations states corresponding to the reference state, where N is a positive integer greater than or equal to 1; determining M excitations states from the N excitations states based on an attribute of the reference state and attributes of the N excitations states, where M is a positive integer greater than or equal to 1 and less than or equal to N; and generating a first quantum circuit based on the M excitations states such as to improve computation efficiency and to reduce resource consumption.

A quantum circuit generation method includes determining a reference state of a target molecule and N excitations states corresponding to the reference state, where N is a positive integer greater than or equal to 1; determining M excitations states from the N excitations states based on an attribute of the reference state and attributes of the N excitations states, where M is a positive integer greater than or equal to 1 and less than or equal to N; and generating a first quantum circuit based on the M excitations states such as to improve computation efficiency and to reduce resource consumption.

An electronic device and a memristor-based logic gate circuit thereof. In the present application, a control end of a controllable switch is connected to a negative end of an output memristor in a MAGIC-based AND logic gate, and whether a second memristor is powered on is controlled by the controllable switch. Thus, when resistance value states of two input memristors in the AND logic gate are different, the controllable switch will conduct and power on the second memristor, and the second memristor will present a low-resistance state at this time. When the resistance value states of the two input memristors are the same, the controllable switch will not conduct and the second memristor will then remain the state unchanged, i.e., presents a high-resistance state. An exclusive OR logic gate is formed by combining the two input memristors and the second memristor.

An electronic device and a memristor-based logic gate circuit thereof. In the present application, a control end of a controllable switch is connected to a negative end of an output memristor in a MAGIC-based AND logic gate, and whether a second memristor is powered on is controlled by the controllable switch. Thus, when resistance value states of two input memristors in the AND logic gate are different, the controllable switch will conduct and power on the second memristor, and the second memristor will present a low-resistance state at this time. When the resistance value states of the two input memristors are the same, the controllable switch will not conduct and the second memristor will then remain the state unchanged, i.e., presents a high-resistance state. An exclusive OR logic gate is formed by combining the two input memristors and the second memristor.

A drive circuit includes plural drive transistors that drive plural load elements, and an operation limiting circuit. The operation limiting circuit is configured by a logic circuit combining AND elements and NOR elements. When plural control signals are input to the operation limiting circuit due to abnormal input, the plural drive transistors for which the control signals were input are switched OFF.

A drive circuit includes plural drive transistors that drive plural load elements, and an operation limiting circuit. The operation limiting circuit is configured by a logic circuit combining AND elements and NOR elements. When plural control signals are input to the operation limiting circuit due to abnormal input, the plural drive transistors for which the control signals were input are switched OFF.

A phononic transistor can be realized by arranging a row of cantilevered structures with attached magnets, elastically extending upward upon application of a magnetic repulsive force to the magnets. In the extended configuration, the phonons are transmitted from source to drain, while in the flattened configuration the phonons are blocked from transmission. A gate element controls the ON and OFF states of the phononic transistor.

Various examples of reprogrammable universal logic devices are provided. In one example, the device can include a tunable AC input to an oscillator/resonator; a first logic input and a second logic input to the oscillator/resonator, the first and second logic inputs provided by separate DC voltage sources (VA, VB), each of the first and second logic inputs including an on/off switch (A, B); and the oscillator/resonator including an output terminal. The tunable oscillator/resonator can be a MEMS/NEMS resonator. Switching of one or both of the first or second logic inputs on or off in association with the tuning of the AC input can provide logic gate operation. The device can easily be extended to a 3-bit or n-bit device by providing additional logic inputs. Binary comparators and encoders can be implemented using a plurality of oscillators/resonators.