A time-to-digital converter (TDC) that combines the energy efficiency of a successive approximation (SAR) design with the high speed of pipelined converters by leveraging the inherently pipelined nature of time-domain signaling. The TDC achieves high speed by removing a comparator decision from a signal path, instead using AND/OR gates to separate early and late edges. The TDC uses a pipelined SAR architecture to digitize a differential delay between two incoming clock edges with high speed and low power consumption. Described is a modular digital reference voltage generator that can be used for a capacitive digital-to-analog converter (DAC). The generator comprises a decoupling capacitor, one or more clocked comparators, and power transistor(s). A simplified digital low dropout (LDO) circuitry is used to provide fast reference voltage generation with minimal overhead. The LDO circuitry is arrayed using time-interleaved synchronous clocks or staggered asynchronous clocks to provide finer timing resolution.

A low-power retention flip-flop is provided. The low-power retention flip-flop may include: a master latch configured to output an input signal based on first control signals; a slave latch configured to output the signal from the master latch based on second control signals; and a control logic configured to generate the first control signals based on a clock signal, and provide the generated first control signals to the master latch, and generate the second control signals based on the clock signal and a power down mode signal, and provide the generated second control signals to the slave latch.

A low-power retention flip-flop is provided. The low-power retention flip-flop may include: a master latch configured to output an input signal based on first control signals; a slave latch configured to output the signal from the master latch based on second control signals; and a control logic configured to generate the first control signals based on a clock signal, and provide the generated first control signals to the master latch, and generate the second control signals based on the clock signal and a power down mode signal, and provide the generated second control signals to the slave latch.

A semiconductor device with reduced power consumption can be provided. The semiconductor device includes a first transistor and a second transistor. The first transistor is a p-channel transistor including silicon in a channel formation region and the second transistor is an n-channel transistor including a metal oxide in a channel formation region. The metal oxide includes indium, an element M (e.g., gallium), and zinc. A gate of the first transistor is electrically connected to a gate of the second transistor, and one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor. The first transistor and the second transistor can each operate in a subthreshold region.

A semiconductor device with reduced power consumption can be provided. The semiconductor device includes a first transistor and a second transistor. The first transistor is a p-channel transistor including silicon in a channel formation region and the second transistor is an n-channel transistor including a metal oxide in a channel formation region. The metal oxide includes indium, an element M (e.g., gallium), and zinc. A gate of the first transistor is electrically connected to a gate of the second transistor, and one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor. The first transistor and the second transistor can each operate in a subthreshold region.

A signal sampling circuit includes: a signal input circuit, configured to determine a to-be-processed command signal and a to-be-processed chip select signal; a clock receiving circuit, configured to receive an initial clock signal and perform frequency division processing on the initial clock signal to obtain a first clock signal; a sampling and logic circuit, configured to perform two-stage sampling processing and logic operation processing on the to-be-processed chip select signal according to the first clock signal to obtain a chip select clock signal, where the chip select clock signal includes two pulses, and the width of each pulse is a preset clock cycle; and a decoding circuit, configured to perform decoding processing and sampling processing on the to-be-processed command signal according to the to-be-processed chip select signal and the chip select clock signal to obtain a target command signal.

A signal sampling circuit includes: a signal input circuit, configured to determine a to-be-processed command signal and a to-be-processed chip select signal; a clock receiving circuit, configured to receive an initial clock signal and perform frequency division processing on the initial clock signal to obtain a first clock signal; a sampling and logic circuit, configured to perform two-stage sampling processing and logic operation processing on the to-be-processed chip select signal according to the first clock signal to obtain a chip select clock signal, where the chip select clock signal includes two pulses, and the width of each pulse is a preset clock cycle; and a decoding circuit, configured to perform decoding processing and sampling processing on the to-be-processed command signal according to the to-be-processed chip select signal and the chip select clock signal to obtain a target command signal.

The present disclosure relates to a latch circuit and a latch method, and an electronic device, and relates to the technical field of integrated circuits. The latch circuit includes: a transmission module, a latch module, and a control module, wherein the transmission module is configured to transmit an input signal to the latch module; the latch module is configured to latch the input signal or output the input signal when a set signal or a reset signal is at a low level; and the control module is configured to perform control, such that a current leakage path cannot be formed between the transmission module and the latch module when the set signal or the reset signal is at a high level.

The present disclosure relates to a latch circuit and a latch method, and an electronic device, and relates to the technical field of integrated circuits. The latch circuit includes: a transmission module, a latch module, and a control module, wherein the transmission module is configured to transmit an input signal to the latch module; the latch module is configured to latch the input signal or output the input signal when a set signal or a reset signal is at a low level; and the control module is configured to perform control, such that a current leakage path cannot be formed between the transmission module and the latch module when the set signal or the reset signal is at a high level.

A pseudo-triple-port memory is provided with read datapaths and write datapaths. The pseudo-triple-port memory includes a plurality of pseudo-triple-port bitcells, each pseudo-triple-port first bitcell having a first read port coupled to a first bit line, a second read port coupled to a second bit line, and a write port coupled to the first bit line and to the second bit line.