The present application discloses a semiconductor device with an inverter and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a gate structure positioned on the substrate; a first impurity region and a second impurity region respectively positioned on two sides of the gate structure and positioned in the substrate; a first contact positioned on the first impurity region and including a first resistance; a second contact positioned on the first impurity region and including a second resistance less than the first resistance of the first contact. The first contact is configured to electrically couple to a power supply and the second contact is configured to electrically couple to a signal output. The gate structure, the first impurity region, the second impurity region, the first contact, and the second contact together configure an inverter.

The present application discloses a semiconductor device with an inverter and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a gate structure positioned on the substrate; a first impurity region and a second impurity region respectively positioned on two sides of the gate structure and positioned in the substrate; a first contact positioned on the first impurity region and including a first resistance; a second contact positioned on the first impurity region and including a second resistance less than the first resistance of the first contact. The first contact is configured to electrically couple to a power supply and the second contact is configured to electrically couple to a signal output. The gate structure, the first impurity region, the second impurity region, the first contact, and the second contact together configure an inverter.

A flip-flop circuit includes a clock generator configured to generate first and second clock signals having different phases relative to each other, and a master-slave latch circuit including master and slave latches. The master latch includes a scan path configured to output a scan path signal in response to a scan enable signal and a scan input signal, and a data path configured to output a first latch signal in response to a data signal and the scan path signal. A feedback path is provided, which includes a tri-state inverter responsive to the first and second clock signals. The tri-state inverter has an input terminal connected to an output terminal of the data path and an output terminal connected to a node of the scan path.

A flip-flop circuit includes a clock generator configured to generate first and second clock signals having different phases relative to each other, and a master-slave latch circuit including master and slave latches. The master latch includes a scan path configured to output a scan path signal in response to a scan enable signal and a scan input signal, and a data path configured to output a first latch signal in response to a data signal and the scan path signal. A feedback path is provided, which includes a tri-state inverter responsive to the first and second clock signals. The tri-state inverter has an input terminal connected to an output terminal of the data path and an output terminal connected to a node of the scan path.

Provided are a summing circuit and an equalizer including the summing circuit. The summing circuit includes: a reference signal generator generating a first reference signal and a second reference signal, based on a coefficient code; a first non-overlap clock buffer generating a first switching signal and a second switching signal by using the first reference signal; and a first current source receiving the first switching signal and the second switching signal generated by the first non-overlap clock buffer, generating a first output current by using a bias voltage, and outputting the first output current to an output line, wherein the first switching signal includes a switching signal and a complementary switching signal that is a complementary signal to the switching signal, and wherein a logic low period of the second switching signal is included in a logic high period of the complementary switching signal of the first switching signal.

Provided are a summing circuit and an equalizer including the summing circuit. The summing circuit includes: a reference signal generator generating a first reference signal and a second reference signal, based on a coefficient code; a first non-overlap clock buffer generating a first switching signal and a second switching signal by using the first reference signal; and a first current source receiving the first switching signal and the second switching signal generated by the first non-overlap clock buffer, generating a first output current by using a bias voltage, and outputting the first output current to an output line, wherein the first switching signal includes a switching signal and a complementary switching signal that is a complementary signal to the switching signal, and wherein a logic low period of the second switching signal is included in a logic high period of the complementary switching signal of the first switching signal.

A high-voltage power supply system including a high-voltage regulator, a function generator, and a triggering circuit. The high-voltage regulator includes a microcontroller, a digital-to-analog convertor in communication with the microcontroller, and a high-voltage DC-DC converter in communication with the digital-to-analog converter. The function generator includes a high-voltage inverter including one or more MOSFET switches. The high-voltage inverter is in communication with the microcontroller of the high-voltage regulator. The triggering circuit includes one or more high-voltage electromechanical switches.

A high-voltage power supply system including a high-voltage regulator, a function generator, and a triggering circuit. The high-voltage regulator includes a microcontroller, a digital-to-analog convertor in communication with the microcontroller, and a high-voltage DC-DC converter in communication with the digital-to-analog converter. The function generator includes a high-voltage inverter including one or more MOSFET switches. The high-voltage inverter is in communication with the microcontroller of the high-voltage regulator. The triggering circuit includes one or more high-voltage electromechanical switches.

A request to perform a read operation on a memory device is received. The memory device includes a first group of memory cells. The first group of memory cells represents a first sequence of bits based on a first sequence of charge levels formed by the first group of memory cells. The read operation is performed by obtaining a first read signal for a first memory cell and a second read signal for a second memory cell of the first group of memory cells. A first rule logic is applied to the first read signal to generate a first updated signal and a second rule logic is applied to the second read signal to generate a second updated signal. Logic functions are applied to the first and second updated signals to generate an output signal indicating the first sequence of bits stored by the first group of memory cells.

A request to perform a read operation on a memory device is received. The memory device includes a first group of memory cells. The first group of memory cells represents a first sequence of bits based on a first sequence of charge levels formed by the first group of memory cells. The read operation is performed by obtaining a first read signal for a first memory cell and a second read signal for a second memory cell of the first group of memory cells. A first rule logic is applied to the first read signal to generate a first updated signal and a second rule logic is applied to the second read signal to generate a second updated signal. Logic functions are applied to the first and second updated signals to generate an output signal indicating the first sequence of bits stored by the first group of memory cells.