Various embodiments relate to a skew detector circuit, including: a logic circuit having two inputs configured to generate a logic 1 output when the two inputs have a logic 0 value and generator a logic 0 output when the two input have a logic 1 value; a first level shifter configured to increase the output of the logic circuit to a higher voltage; a second level shifter configured to increase the output of the first level shifter to a higher voltage; and a voltage regulator configured to produce a first voltage for the logic circuit, a second voltage for the first level shifter, and a third voltage for the second level shift.

Various embodiments relate to a skew detector circuit, including: a logic circuit having two inputs configured to generate a logic 1 output when the two inputs have a logic 0 value and generator a logic 0 output when the two input have a logic 1 value; a first level shifter configured to increase the output of the logic circuit to a higher voltage; a second level shifter configured to increase the output of the first level shifter to a higher voltage; and a voltage regulator configured to produce a first voltage for the logic circuit, a second voltage for the first level shifter, and a third voltage for the second level shift.

A resistive matrix computation circuit and methods for using the same are disclosed. In one embodiment, a resistive matrix computation circuit includes a memory configured to store a first set of operands and a second set of operands, where the first set of input operands and the second set of input operands are programmable by a controller, and the first set of operands and the second set of operands are cross-multiplied to form a plurality of product pairs, a plurality of resistive multiplier circuits configured to generate a plurality of output voltages according to the plurality of product pairs; the controller is configured to control the plurality of resistive multiplier circuits to perform multiplications using the first set of operands and the second set of operands, and an aggregator circuit configured to aggregate the plurality of output voltages from the plurality of resistive multiplier circuits, where the plurality of output voltages represent an aggregated value of the plurality of product pairs.

A resistive matrix computation circuit and methods for using the same are disclosed. In one embodiment, a resistive matrix computation circuit includes a memory configured to store a first set of operands and a second set of operands, where the first set of input operands and the second set of input operands are programmable by a controller, and the first set of operands and the second set of operands are cross-multiplied to form a plurality of product pairs, a plurality of resistive multiplier circuits configured to generate a plurality of output voltages according to the plurality of product pairs; the controller is configured to control the plurality of resistive multiplier circuits to perform multiplications using the first set of operands and the second set of operands, and an aggregator circuit configured to aggregate the plurality of output voltages from the plurality of resistive multiplier circuits, where the plurality of output voltages represent an aggregated value of the plurality of product pairs.

A scalable matrix computation circuit and methods for using the same are disclosed. In one embodiment, a matrix computation circuit includes a plurality of first operand memory configured to store a first set of input operands of the matrix computation circuit, a plurality of second operand memory configured to store a second set of input operands of the matrix computation circuit, where the first and second sets of input operands are programmable by the controller, a plurality of multiplier circuits arranged in a plurality of rows and plurality of columns, where each row receives a corresponding operand from the first set of operands, and each column receives a corresponding operand from the second set of operands, and the each corresponding operand from the each row is used multiple times by the multiplier circuits in that row to perform multiplications controlled by the controller, and a plurality of aggregator circuits configured to store charges produced by the plurality of multiplier circuits.

A circuit includes a high-side switch and a low-side switch. A first inverter includes first and second discharge current paths activatable to sink first and second discharge currents, respectively, from the control terminal of the high-side switch. A second inverter includes first and second charge current paths activatable to source first and second charge currents to the control terminal of the low-side switch. A high-side sensing current path includes an intermediate high-side control node, and a low-side sensing current path includes an intermediate low-side control node. The second discharge current path is selectively enablable in response to a high-side detection signal at the intermediate high-side control node having a high logic value, and the second charge current path is selectively enablable in response to a low-side detection signal at the intermediate low-side control node having a low logic value.

A circuit includes a high-side switch and a low-side switch. A first inverter includes first and second discharge current paths activatable to sink first and second discharge currents, respectively, from the control terminal of the high-side switch. A second inverter includes first and second charge current paths activatable to source first and second charge currents to the control terminal of the low-side switch. A high-side sensing current path includes an intermediate high-side control node, and a low-side sensing current path includes an intermediate low-side control node. The second discharge current path is selectively enablable in response to a high-side detection signal at the intermediate high-side control node having a high logic value, and the second charge current path is selectively enablable in response to a low-side detection signal at the intermediate low-side control node having a low logic value.

Duty cycles of pulse width modulation (“PWM”) pulses are determined by measurements taken with respect to an internally generated clock signal. One of these measurements calculates, in a continuous dynamic manner, a ratio of the number of cycles of the internally generated clock signal to one or more cycles of a PWM clock signal utilized as a time base for generation of the PWM pulses. This clock ratio measurement designates how many cycles of the internally generated clock signal will be used to designate a first portion of a duty cycle for each PWM pulse. Another measurement is utilized to determine a fractional portion of a cycle of the internally generated clock signal that will be used to designate a second portion of the duty cycle for each PWM pulse.

Duty cycles of pulse width modulation (“PWM”) pulses are determined by measurements taken with respect to an internally generated clock signal. One of these measurements calculates, in a continuous dynamic manner, a ratio of the number of cycles of the internally generated clock signal to one or more cycles of a PWM clock signal utilized as a time base for generation of the PWM pulses. This clock ratio measurement designates how many cycles of the internally generated clock signal will be used to designate a first portion of a duty cycle for each PWM pulse. Another measurement is utilized to determine a fractional portion of a cycle of the internally generated clock signal that will be used to designate a second portion of the duty cycle for each PWM pulse.

A Unit Element (UE) has a positive UE and a negative UE, each having a digital X input and a digital W input with a sign bit, the sign bit is exclusive ORed with a chop clock to generate a chopped sign bit. The positive UE is enabled when the chopped sign bit is positive and the negative UE is enabled when the chopped sign bit is negative. Each positive and negative UE comprises groups of NAND gates generating an output and complementary output which are coupled to a differential charge transfer bus comprising a positive charge transfer line and a negative charge transfer line. The NAND gate outputs and complementary outputs are coupled through binary weighted charge transfer capacitors the positive charge transfer line and negative charge transfer line.