A regeneration circuit includes a first inverting circuit and a second inverting circuit. The regeneration circuit also includes a first transistor coupled to an input of the second inverting circuit, and a second transistor coupled to an input of the first inverting circuit, a third transistor and a fourth transistor. A gate of the first transistor and a gate of the fourth transistor are coupled to a first input, and a gate of the second transistor and a gate of the fourth transistor are coupled to a second input. The regeneration circuit further includes a first switch and a second switch. The first switch and the third transistor are coupled in series between a first rail and the first transistor, and the second switch and the fourth transistor are coupled in series between the first rail and the second transistor.

A multi-chip package includes a field-programmable-gate-array (FPGA) integrated-circuit (IC) chip configured to perform a logic function based on a truth table, wherein the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip comprises multiple non-volatile memory cells therein configured to store multiple resulting values of the truth table, and a programmable logic block therein configured to select, in accordance with one of the combinations of its inputs, one from the resulting values into its output; and a memory chip coupling to the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip, wherein a data bit width between the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip and the memory chip is greater than or equal to 64.

A multi-chip package includes a field-programmable-gate-array (FPGA) integrated-circuit (IC) chip configured to perform a logic function based on a truth table, wherein the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip comprises multiple non-volatile memory cells therein configured to store multiple resulting values of the truth table, and a programmable logic block therein configured to select, in accordance with one of the combinations of its inputs, one from the resulting values into its output; and a memory chip coupling to the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip, wherein a data bit width between the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip and the memory chip is greater than or equal to 64.

A power management circuit includes both a power on reset (POR) circuit and a voltage monitoring circuit. Explicit testing of these circuits is accomplished by controlling voltages applied to the circuits and monitoring an output signal responsive to a logical combination of outputs from the POR circuit and voltage monitoring circuit. The applied voltages are controlled with respect to timing of application, fixing of voltages and varying of voltages in a manner where a certain one of the circuits for explicit test is isolated with change in logic state of the output signal being indicative of operation of that isolated circuit.

A power management circuit includes both a power on reset (POR) circuit and a voltage monitoring circuit. Explicit testing of these circuits is accomplished by controlling voltages applied to the circuits and monitoring an output signal responsive to a logical combination of outputs from the POR circuit and voltage monitoring circuit. The applied voltages are controlled with respect to timing of application, fixing of voltages and varying of voltages in a manner where a certain one of the circuits for explicit test is isolated with change in logic state of the output signal being indicative of operation of that isolated circuit.

An interpolator includes a first delay circuit, a second delay circuit, and a tunable delay circuit. The first delay circuit delays a first input signal for a fixed delay time, so as generate a first output signal. The second delay circuit delays a second input signal for the fixed delay time, so as to generate a second output signal. The tunable delay circuit delays the first input signal for a tunable delay time, so as to generate an output interpolation signal. The tunable delay time is determined according to the first output signal, the second output signal, and the output interpolation signal.

An interpolator includes a first delay circuit, a second delay circuit, and a tunable delay circuit. The first delay circuit delays a first input signal for a fixed delay time, so as generate a first output signal. The second delay circuit delays a second input signal for the fixed delay time, so as to generate a second output signal. The tunable delay circuit delays the first input signal for a tunable delay time, so as to generate an output interpolation signal. The tunable delay time is determined according to the first output signal, the second output signal, and the output interpolation signal.

The present disclosure provides a memory device, wherein: an address latch can output a block selection control signal according to a block selection enable signal; a test mode selection unit can output a test mode selection signal according to a test mode selection instruction signal; a block selection unit outputs a block selection signal according to a mode selection signal and a block selection enable signal; when the memory enters a first test mode according to the test mode selection signal, an output buffer disables some of the input/output ports, and sequentially outputs the first input/output data and the second input/output data through un-disabled the input/output ports. The memory device according to the present disclosure can occupy less input/output ports of a test machine.

A semiconductor device includes a hysteresis block configured to generate an output voltage at corresponding disabling enabling voltage levels and a core-voltage-gated (CVG) device configured to receive a core voltage, an input terminal of the hysteresis block is coupled to a control node. The CVG device is configured to alter a control voltage at the control node so as to cause the output voltage of the hysteresis block to be generated at the disabling voltage level in response to the core voltage being at or below a first trigger level. Additionally, the CVG device is configured to alter the control voltage at the control node so as to cause the output voltage of the hysteresis block to be generated at the enabling voltage level in response to the core voltage being at or above a second trigger level, the second trigger level being above the first trigger level.

A semiconductor device includes a hysteresis block configured to generate an output voltage at corresponding disabling enabling voltage levels and a core-voltage-gated (CVG) device configured to receive a core voltage, an input terminal of the hysteresis block is coupled to a control node. The CVG device is configured to alter a control voltage at the control node so as to cause the output voltage of the hysteresis block to be generated at the disabling voltage level in response to the core voltage being at or below a first trigger level. Additionally, the CVG device is configured to alter the control voltage at the control node so as to cause the output voltage of the hysteresis block to be generated at the enabling voltage level in response to the core voltage being at or above a second trigger level, the second trigger level being above the first trigger level.