The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

Both AC and DC Power supply systems that may be connected directly to. AC mains and are integrated on silicon are described. The AC systems include both simple on/off capabilities as well as phase control capabilities. The DC power supply may be fixed, adjustable as through a potentiometer and programmable. The power supply systems use newly invented components of AC/DC converters and bidirectional MOSFET switches.

Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper collector-emitter of the transistor, through the transistor, and from a lower collector-emitter to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower collector-emitter to the lower terminal by opening a lower-main FET and thereby commutating a first shutoff current through a lower base of the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.

Systems, methods, techniques and apparatuses of power switches are disclosed. One exemplary embodiment is a power switch comprising a first semiconductor device and a second semiconductor device coupled together in a first anti-series configuration between a first terminal and a second terminal; a third semiconductor device and a fourth semiconductor device coupled together in a second anti-series configuration between the first terminal and the second terminal; a controller configured to operate the power switch to simultaneously conduct a first portion of a load current from the first terminal to the second terminal by closing the first semiconductor device and the second semiconductor device, and to conduct a second portion of the load current from the first terminal to the second terminal by closing the third semiconductor device and the fourth semiconductor device.

An electronic switch has a first, a second and a third connection and is configured to disconnect a current flow between the first and the second connection. An energy source is connected between the first and the third connection, and a regenerative load is connected between the second and the third connection. The electronic switch includes a semiconductor switch capable of switching currents of different polarity. A fuse is connected between the first connection and the semiconductor switch. A first short-circuiter is connected between the input of the semiconductor switch and the third connection, and a second short-circuiter is connected between the output of the semiconductor switch and the third connection. The fuse has a current trigger threshold between a permanently permitted current and a maximally permitted current of the semiconductor switch. An electrical network having such electronic switch and a method for operating an electronic switch are disclosed.

An electronic switch has a first semiconductor switch arranged between a first source-side terminal and a first consumer-side terminal first, and a switch embodied as a thyristor and arranged between the first consumer-side terminal and a second source-side terminal. The switch is configured to generate a thermal overload from a short-circuit current produced when the switch closes. The thermal overload causes the first semiconductor switch to irreversibly transition into an open state due to a modification inside the first semiconductor switch caused by the thermal overload. This improves the switching behavior of the electronic switch in the event of a fault. Furthermore, an electrical network with at least one electronic switch connected to an energy source and a method for operating such an electronic switch or such an electrical network is also described.

A positive-logic FET switch stack that does not require a negative bias voltage, exhibits high isolation and low insertion/mismatch loss, and may withstand high RF voltages. Embodiments include a FET stack comprising series-coupled positive-logic FETs (i.e., FETs not requiring a negative voltage supply to turn OFF), series-coupled on at least one end by an “end-cap” FET of a type that turns OFF when its V.sub.GS is zero volts. The one or more end-cap FETs provide a selectable capacitive DC blocking function or a resistive signal path. Embodiments include a stack of FETs of only the zero V.sub.GS type, or a mix of positive-logic and zero V.sub.GS type FETs with end-cap FETs of the zero V.sub.GS type. Some embodiments withstand high RF voltages by including combinations of series or parallel coupled resistor ladders for the FET gate resistors, drain-source resistors, body charge control resistors, and one or more AC coupling modules.

A bidirectional bipolar transistor switch arrangement, including: a first bipolar transistor and a second bipolar transistor connected in anti-parallel between a first terminal and a second terminal, a resistor connected to the base of the first bipolar transistor and the second bipolar transistor and to a control terminal, a first diode connected with anode to the first terminal, a second diode connected with anode to the second terminal, the first diode and the second diode being connected via respective cathodes to a supply terminal.

The bidirectional bipolar transistor switch arrangement is able to control the power supply within a daisy chain with low drop voltage.

The present disclosure concerns a method and a circuit for controlling first and second switches electrically in series, wherein one or a plurality of crossings of a voltage threshold by a voltage across the first switch cause a conductive state of the second switch.