A voltage tracking circuit includes first, second, third and fourth transistors. The first transistor is in a first well, and includes a first gate, a first drain and a first source coupled to a first voltage supply. The second transistor includes a second gate, a second drain and a second source. The second source is coupled to the first drain. The second gate is coupled to the first gate and the pad voltage terminal. The third transistor includes a third gate, a third drain and a third source. The fourth transistor includes a fourth gate, a fourth drain and a fourth source. The fourth drain is coupled to the third source. The fourth source is coupled to the pad voltage terminal. The fourth transistor is in a second well different from the first well, and is separated from the first well in a first direction.

The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

Gate Drive Apparatus and Control Method for Switched Capacitor Converter A power converter includes a plurality of power switches connected in series between a system ground and an input voltage bus, wherein an upper power switch located between the input voltage bus and an output terminal of the power converter, and immediately adjacent to the output terminal of the power converter is configured as an isolation switch including two back-to-back connected diodes and a bulk terminal, and wherein a connection of the bulk terminal is reconfigurable, and a driver configured to drive the upper power switch immediately adjacent to the output terminal of the power converter.

An aspect includes an apparatus including a first amplifier; a first field effect transistor (FET) including a first source coupled to an output of the first amplifier, and a first drain for coupling to a first load; and a first gate drive circuit including an input coupled to the output of the first amplifier and an output coupled to a first gate of the first FET. Another aspect includes a method including amplifying a first audio signal using a first audio amplifier to generate a first voltage; generating a first gate voltage based on the first voltage; applying the first gate voltage to a first gate of a first field effect transistor (FET) coupled between the first audio amplifier and a first audio transducer; and applying the first voltage to a first source of the first FET.

An apparatus includes a first gate drive transistor and a second gate drive transistor connected in series, a common node of the first gate drive transistor and the second gate drive transistor connected to a gate of a power switch, the second gate drive transistor configured as a bulk switch having a bulk terminal connected to a bulk terminal of the power switch, a first auxiliary transistor connected between the bulk terminal and a source of the power switch, a second auxiliary transistor coupled between the gate of the power switch and a system ground, and a third auxiliary transistor coupled between a logic control ground and the system ground, wherein the second auxiliary transistor and the third auxiliary transistor are configured to pull the gate of the power switch and the logic control ground down to the system ground in response to a turn off of the apparatus.

The present invention provides a single-pole double-throw switch circuit with a Type-C interface, an analog switch chip and an electronic device, which can generate a reverse bias voltage across a first diode, so that a capacitance value of a PN junction can be significantly reduced after the reverse bias voltage is applied to the PN junction. Further, a ground capacitance corresponding to a COM point when the first diode is turned off can be effectively reduced, avoiding the reduction of a bandwidth of a digital path due to excessive capacitance. It can be seen that the present invention can realize a large size of a first field effect transistor and a high bandwidth of the digital path simultaneously, thereby facilitating the simultaneous improvement of the THD performance of an analog audio path and the bandwidth of the digital path, and avoiding conflicts between the two.