A voltage detection circuit and method for an integrated circuit, and an integrated circuit are provided. The voltage detection circuit includes: a first current source, a first branch and a second branch. A current outputted by the first current source is allocated to the first branch and the second branch. The first branch includes a first voltage control current component and a first load connected in series. The second branch includes a current signal detection component and a second load connected in series. A voltage signal to be detected is inputted to a control signal input terminal of the first voltage control current component. The current signal detection component is configured to output, in real time, a preset signal characterizing a second current flowing through the second branch, to determine change of the voltage signal to be detected based on the preset signal.

A driver circuit controls a first switch element. A first resistor is connected between the driver circuit and the first switch element. A second switch element is connected to the first switch element. An overcurrent detector circuit controls the second switch element based on an overcurrent current flowing through the first switch element. A second resistor is connected between the overcurrent detector circuit and the second switch element. The first and second resistor is set such that a turn-off time of the first switch element when the second switch element is turned on by the overcurrent detector circuit is longer than a turn-off time of the first switch element when the first switch element is turned off by the driver circuit.

A semiconductor device including a plurality of power modules each of which includes a power semiconductor switching element that has a temperature detection diode, and a drive circuit that has an output circuit for switching on and off the power semiconductor switching element, and that outputs a warning signal for calling attention if the value of the forward voltage of the temperature detection diode becomes equal to or smaller than a first reference voltage value, and that outputs a protection operation signal for stopping the on/off operation of the power semiconductor switching element if the value of the forward voltage becomes equal to or smaller than a second reference voltage value smaller than the first reference voltage value. The semiconductor device outputs the logical sum of the warning signals of the individual power modules as an external warning signal.

A drive device includes a driver configured to drive a high-side transistor and a low-side transistor; a first current detecting part for detecting one of an upper-side current that flows to the high-side transistor and a lower-side current that flows to the low-side transistor; a first current determining part that detects a sign of switching of a forward direction/reverse direction of the upper-side current or the lower-side current detected by the first current detecting part or the switching per se; and a slew rate adjusting part configured to control the driver such that a slew rate of the high-side transistor or the low-side transistor is adjusted according to a determination result of the first current determining part.

A method for operating a gate driver system includes measuring a first parameter according to a first priority schedule synchronously to a first edge of a switching signal generated by a gate driver integrated circuit and having a variable duty cycle. The method includes after measuring the first parameter of the gate driver system and prior to a second edge of the switching signal, measuring at least a second parameter of the gate driver system according to a first round-robin schedule synchronously to the first edge of the switching signal.

The present disclosure provides a motor drive device. The motor drive device includes a current detection unit, a control unit and a determination unit. The current detection unit detects a current flowing through a motor coil. The control unit executes a slow attenuation mode that attenuates the current after an end of a power supply mode. The determination unit determines whether the current at a second time point while a predetermined time has elapsed from a first time point when the power supply mode is switched to a slow decay mode is below a limit value. When the determination unit determines that the current does not fall below the limit value, the control unit is configured to switch from the slow attenuation mode to a fast attenuation mode at the second time point.

A semiconductor device includes m power transistors (m is an integer of 2 or more) coupled in parallel each of which has a sense source terminal, a Kelvin terminal and a source terminal, a first average circuit that connects the first resistor and the second resistor in order between the sense source terminal and the Kelvin terminal and generates first to fourth average voltages and an arithmetic circuit that measures a first current value flowing through the sense source terminal from the first and second average voltages, measures a second current value flowing through the sense source terminal from the third and fourth average voltages and measures a current value flowing through the source terminal from the first to fourth average voltages and the first and second current values.

To provide a power converter which can detect occurrence of excess current in early stage without providing a blanking time when the detection of excess current is not performed after the turn on of the switching device, and which can protect the power converter. A power converter includes a time change detection circuit that outputs a detection signal according to a time change rate of a main voltage; an excess current determination circuit that generates an excess current occurrence signal of normal current state when the detection signal is less than a first threshold value, and generates the excess current occurrence signal of excess current state when the detection signal is not less than the first threshold value; and a driving circuit that generates the driving voltage of OFF state when the drive command signal is ON state and the excess current occurrence signal is excess current state.

A bidirectional switch fault protection circuit includes a bidirectional switch circuit, a desaturation detection circuit, and a gate driver. The bidirectional switch circuit generates first and second switch voltages based on a direction of electric current. The desaturation detection circuit outputs the first switch voltage in response to the electric current flowing in a first direction and outputs the second switch voltage in response to the electric current flowing in a second direction opposite the first direction. The gate driver receives the first switch voltage in response to the electric current flowing in the first direction and the second switch voltage in response to the electric current flowing in the second direction. The gate driver detects a first short circuit condition based on the first switch voltage and a second short circuit condition based on the second switch voltage.

A drive device for driving a voltage-controlled semiconductor element. The drive device includes: a drive circuit connected to the gate of the semiconductor element via a gate resistor; a delay circuit connected to the drive circuit, for delaying a drive signal output from the drive circuit until a gate voltage of the semiconductor element enters a Miller effect period, which is a period during which the gate voltage transitionally changes, the gate voltage having temperature dependency on a chip temperature of the semiconductor element; a one-shot circuit connected to the delay circuit, for outputting a pulse signal with a pulse width shorter than the Miller effect period; a comparator that compares the gate voltage with a reference voltage; and an AND circuit that outputs an overheat detection signal in response to the gate voltage exceeding the reference voltage.