H03M1/66

SYSTEMS AND METHODS FOR DC POWER AND DATA COMMUNICATION OVER A SINGLE PAIR OF WIRES, FOR A QUICK-SERVICE RESTAURANT
20240039974 · 2024-02-01 ·

Systems and methods for facilitating intercom communication for one or more quick-service restaurant drive-throughs are disclosed. Exemplary implementations may: capture sound from a customer placing an order; generate order information signals that represent the captured sound; encode signals to form order data packets; transmit the order data packets to a base station through a single pair of wires that is also used to provide power; decode information from the order data packets; and generate order sound based on the decoded information, such that the generated order sound is audible to a staff member of the quick service restaurant through a headset.

SYSTEMS AND METHODS FOR DC POWER AND DATA COMMUNICATION OVER A SINGLE PAIR OF WIRES, FOR A QUICK-SERVICE RESTAURANT
20240039974 · 2024-02-01 ·

Systems and methods for facilitating intercom communication for one or more quick-service restaurant drive-throughs are disclosed. Exemplary implementations may: capture sound from a customer placing an order; generate order information signals that represent the captured sound; encode signals to form order data packets; transmit the order data packets to a base station through a single pair of wires that is also used to provide power; decode information from the order data packets; and generate order sound based on the decoded information, such that the generated order sound is audible to a staff member of the quick service restaurant through a headset.

Non-volatile memory accelerator for artificial neural networks

A non-volatile memory (NVM) crossbar for an artificial neural network (ANN) accelerator is provided. The NVM crossbar includes row signal lines configured to receive input analog voltage signals, multiply-and-accumulate (MAC) column signal lines, a correction column signal line, a MAC cell disposed at each row signal line and MAC column signal line intersection, and a correction cell disposed at each row signal line and correction column signal line intersection. Each MAC cell includes one or more programmable NVM elements programmed to an ANN unipolar weight, and each correction cell includes one or more programmable NVM elements. Each MAC column signal line generates a MAC signal based on the input analog voltage signals and the respective MAC cells, and the correction column signal line generates a correction signal based on the input analog voltage signals and the correction cells. Each MAC signal is corrected based on the correction signal.

Non-volatile memory accelerator for artificial neural networks

A non-volatile memory (NVM) crossbar for an artificial neural network (ANN) accelerator is provided. The NVM crossbar includes row signal lines configured to receive input analog voltage signals, multiply-and-accumulate (MAC) column signal lines, a correction column signal line, a MAC cell disposed at each row signal line and MAC column signal line intersection, and a correction cell disposed at each row signal line and correction column signal line intersection. Each MAC cell includes one or more programmable NVM elements programmed to an ANN unipolar weight, and each correction cell includes one or more programmable NVM elements. Each MAC column signal line generates a MAC signal based on the input analog voltage signals and the respective MAC cells, and the correction column signal line generates a correction signal based on the input analog voltage signals and the correction cells. Each MAC signal is corrected based on the correction signal.

Laser diode driver break-down protection scheme

A system is provided for maintaining a safe operating area while also providing a suitable forward bias voltage to drive a laser diode. The system can monitor a voltage that is applied to a laser diode driver using a threshold that is based on the fabrication process of the laser diode driver. For example, a system can utilize a first threshold for a laser diode driver that is fabricated utilizing a 10 nm process and utilize a second threshold for another laser diode driver that is fabricated utilizing a 20 nm process. The threshold can also be based on a color of the laser or a desired operation mode. The system can monitor a voltage applied to a laser diode using different thresholds while controlling a bleed current to ensure that the laser diode is forward biased while mitigating the risk of silicon breakdown of the laser diode driver.

Laser diode driver break-down protection scheme

A system is provided for maintaining a safe operating area while also providing a suitable forward bias voltage to drive a laser diode. The system can monitor a voltage that is applied to a laser diode driver using a threshold that is based on the fabrication process of the laser diode driver. For example, a system can utilize a first threshold for a laser diode driver that is fabricated utilizing a 10 nm process and utilize a second threshold for another laser diode driver that is fabricated utilizing a 20 nm process. The threshold can also be based on a color of the laser or a desired operation mode. The system can monitor a voltage applied to a laser diode using different thresholds while controlling a bleed current to ensure that the laser diode is forward biased while mitigating the risk of silicon breakdown of the laser diode driver.

Wideband receivers and methods of operation

A receiver can include a first set of one or more amplifier stages configured to amplify input signals in a plurality of communication bands. The receiver can further include a second and third set of one or more amplifier stages. The second set of one or more amplifier stages can be configured to selectively receive the input signals in the plurality of communication bands amplified by the first set of one or more amplifier stages and to amplify one or more input signals in a first one of the plurality of communication bands. Alternatively, the third set of one or more amplifier stages can be configured to selectively receive the input signals in the plurality of communication bands amplified by the first set of one or more amplifier stages and to amplify one or more input signals in a second one of the plurality of communication bands. A first set of one or more mixers can be configured to receive the input signals in the first communication band amplified by the second set of one or more amplifier stages, to receive one or more local oscillator signals for the first communication band, and to generate a baseband signal from a frequency difference of the signal of the first communication band and the one or more local oscillator signals for the first communication band. A second set of one or more mixers can be configured to receive the input signal in the second communication band amplified by the third set of one or more amplifier stages, to receive one or more local oscillator signals for the second communication band, and to generate a baseband signal of the second communication band.

BIAS CIRCUIT

Included are: a first power source 3 configured to output a voltage required for a first gate bias voltage for turning a power amplifier 2 to an ON state; a second power source 4 configured to output a voltage required for a second gate bias voltage for turning the power amplifier 2 to an OFF state; a changeover switch 5 connected between the first power source 3 and the power amplifier 2 and configured to supply either the first gate bias voltage or the second gate bias voltage to the power amplifier 2 by switching a state between the first power source 3 and the power amplifier 2 to either an open state or a short-circuit state on the basis of a control signal related to on-off control of the power amplifier 2; and a resistance value varying unit 15 connected between the second power source 4 and the power amplifier 2 and configured such that a resistance value thereof is variable.

PLANAR QUANTUM STRUCTURES UTILIZING QUANTUM PARTICLE TUNNELING THROUGH LOCAL DEPLETED WELL

Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.

QUANTUM STRUCTURE INCORPORATING THETA ANGLE CONTROL

Novel and useful electronic and magnetic control of several quantum structures that provide various control functions. An electric field provides control and is created by a voltage applied to a control terminal. Alternatively, an inductor or resonator provides control. An electric field functions as the main control and an auxiliary magnetic field provides additional control on the control gate. The magnetic field is used to control different aspects of the quantum structure. The magnetic field impacts the spin of the electron by tending to align to the magnetic field. The Bloch sphere is a geometrical representation of the state of a two-level quantum system and defined by a vector in x, y, z spherical coordinates. The representation includes two angles and whereby an appropriate electrostatic gate control voltage signal is generated to control the angle of the quantum state and an appropriate control voltage to an interface device generates a corresponding electrostatic field in the quantum structure to control the angle .