An image detector includes a substrate, a circuit layer, a plurality of light detecting elements, a plurality of driving elements and a crystal scintillation layer. The substrate has a surface. The circuit layer is arranged on the surface of the substrate, and defines a plurality of detecting areas arranged in an array. The light detecting elements and the driving elements are disposed at the detecting areas and electrically connected with the circuit layer. Each driving element drives one or more of the light detecting elements. The crystal scintillation layer is arranged opposite to the substrate and covers the detecting areas. The light detecting elements and the driving elements connect with the surface of the substrate. At least one of the light detecting elements and the driving elements is formed by a process different from the process of forming the circuit layer on the substrate.

A front-end electronic circuitry for an electromagnetic radiation sensor application comprises a charge sensitive amplifier stage with a first single-input operational transconductance amplifier, and a transistor being arranged in a first feedback path of the first single-input operational transconductance amplifier, and a signal shaper stage with a second single-input operational transconductance amplifier, and an active feedback circuit being arranged in a second feedback path of the second single-input operational transconductance amplifier. The front-end electronic circuitry further comprises a control circuit having a second transistor. The control circuit is configured to provide a control signal to control the transistor of the first feedback path in dependence on a gate-source voltage of the second transistor.

A front-end electronic circuitry for an electromagnetic radiation sensor application comprises a charge sensitive amplifier stage with a first single-input operational transconductance amplifier, and a transistor being arranged in a first feedback path of the first single-input operational transconductance amplifier, and a signal shaper stage with a second single-input operational transconductance amplifier, and an active feedback circuit being arranged in a second feedback path of the second single-input operational transconductance amplifier. The front-end electronic circuitry further comprises a control circuit having a second transistor. The control circuit is configured to provide a control signal to control the transistor of the first feedback path in dependence on a gate-source voltage of the second transistor.

A detector includes a unit cell array in which a plurality of unit cells are arranged. The plurality of unit cells include a first unit cell including a first conversion element and a first amplification transistor including a control electrode connected to the first conversion element, the first unit cell being configured to output a signal obtained by amplifying the signal charge by the first amplification transistor, and a second unit cell including a second amplification transistor including a control electrode connected to a constant voltage source, the second amplification transistor being configured to output a signal corresponding to a voltage of the constant voltage source by the second amplification transistor. The first unit cell and the second unit cell are disposed in an irradiated region in the unit cell array, the irradiated region being configured to be irradiated with the energy beam.

A detector includes a unit cell array in which a plurality of unit cells are arranged. The plurality of unit cells include a first unit cell including a first conversion element and a first amplification transistor including a control electrode connected to the first conversion element, the first unit cell being configured to output a signal obtained by amplifying the signal charge by the first amplification transistor, and a second unit cell including a second amplification transistor including a control electrode connected to a constant voltage source, the second amplification transistor being configured to output a signal corresponding to a voltage of the constant voltage source by the second amplification transistor. The first unit cell and the second unit cell are disposed in an irradiated region in the unit cell array, the irradiated region being configured to be irradiated with the energy beam.

Techniques are provided for x-ray sensing for intraoral tomography. A methodology implementing the techniques according to an embodiment includes detecting an x-ray pulse based on energy received at one or more pixels of a pixel array. The method also includes integrating the energy received at each of the pixels of the array of pixels, in response to the detection, wherein the energy received at each of the pixels is associated with the x-ray pulse. The method further includes multiplexing readouts of analog signals from the array of pixels into two or more parallel channels. The method further includes simultaneously converting (or otherwise in parallel) the analog signals of each of the channels into digital signals and storing the digital signals in memory as frames of data. The method may further include, for example, transmitting the frames of data from the memory, over a Universal Serial Bus, to an imaging system.

Disclosed herein is a method of using an image sensor comprising N sensing areas for capturing images of a scene, the N sensing areas being physically separate from each other, the method comprising: for i=1, . . . , P, and j=1, . . . , Q(i), positioning the image sensor at a location (i, j) and capturing a partial image (i, j) of the scene using the image sensor while the image sensor is at the location (i, j), thereby capturing in total R partial images, wherein R is the sum of Q(i), i=1, . . . , P, wherein P>1, wherein Q(i), i=1, . . . , P are positive integers and are not all 1, wherein for i=1, . . . , P, a location group (i) comprises the locations (i, j), j=1, . . . , Q(i), and wherein a minimum distance between 2 locations of 2 different location groups is substantially larger than a maximum distance between two locations of a same location group; and determining a combined image of the scene based on the R partial images.

An intra-oral imaging device includes: an imager that detects radiation transmitted through an object while being placed in an oral cavity; and a controller that controls the imager while being placed outside the oral cavity. The imager includes an image sensor including a plurality of pixels for acquiring an image of the object. While power is being supplied to the controller, the controller supplies power to the image sensor in an imaging period during which the image sensor performs imaging and stops supplying the power to the image sensor in a standby period during which the image sensor is on standby.

An intra-oral imaging device includes: an imager that detects radiation transmitted through an object while being placed in an oral cavity; and a controller that controls the imager while being placed outside the oral cavity. The imager includes an image sensor including a plurality of pixels for acquiring an image of the object. While power is being supplied to the controller, the controller supplies power to the image sensor in an imaging period during which the image sensor performs imaging and stops supplying the power to the image sensor in a standby period during which the image sensor is on standby.

An X-ray radiation sensor device may include a direct X-ray conversion layer, a plurality of electrodes to provide an electric charge in response to an interaction of an X-ray photon within the direct X-ray conversion layer, a plurality of pixel sensor arrays, and at least one interposer. The direct X-ray conversion layer and the plurality of electrodes are disposed on the top surface of the interposer(s). The plurality of the pixel sensor arrays is disposed on the bottom surface of the interposer(s), and the interposer(s) is configured to electrically couple each of the pixel sensor arrays to a respective portion of the plurality of electrodes.